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In this paper the photoluminescence (PL) of holmium-doped silicon is discussed. The silicon was first implanted with holmium ions at energies of 1-2 MeV and doses of 1 x 10[sup 13]-3 x 10[sup 14] cm[sup -2], and then annealed at temperatures of 620-900 °C for 0.5-1 h. In order to increase the concentration of electrically and optically active centers, the silicon was implanted a second time with oxygen ions at energies of 0.14-0.29 MeV and doses of 1 x 10[sup 14]-3 x 10[sup 15] cm[sup -2]. Several photoluminescence lines, which are attributable to the transitions of electrons from the first excited state of the Ho[sup 3+] ion ([sup 5]I[sub 7]) to the ground state ([sup 5]I[sub 8]), were observed. The amplitudes of the most intense lines, which correspond to transitions at frequencies 5119 and 5103 cm[sup -1], decreased by more than an order of magnitude in the temperature range 4.2-78 K. The PL intensity of the holmium ions increased with increasing concentrations of the implanted rare-earth ions and oxygen. [ABSTRACT FROM AUTHOR]