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The internal fields in 2.2 nm thick InGaN quantum wells in a GaN LED structure have been investigated by using aberration-corrected off-axis electron holography with a spatial resolution of better than 1 nm. To improve the spatial resolution, different types of off-axis electron holography acquisitions have been used, including pi phase shifting and phase shifting holography. A series of electron holograms have been summed up to simultaneously improve the sensitivity in the measurements. A value of 20% of indium concentration in the quantum wells has been obtained by comparing the deformation measured by dark-field electron holography and geometrical phase analysis to finite element simulations. The electrostatic potential has then been measured by off-axis electron holography. The mean inner potential difference between the InGaN quantum wells and the GaN quantum barriers is high compared to the piezoelectric potential. Due to the improved spatial resolution, it is possible to compare the experimental results to simulations and remove the mean inner potential component to provide a quantitative measurement of the piezoelectric potential. [ABSTRACT FROM AUTHOR]

• First application of phase shifting holography with Angstrom spatial resolution. • Specimen drift correction scheme for Fresnel affected atomic resolution holograms. • Software package provision for automatic data collection, drift correction and reconstruction. • Atomic scale electric field characterization and long-range fields at interfaces. • Discussion of spatial resolution, phase sensitivity and incomplete drift correction. Phase-shifting electron holography is an excellent method to reveal electron wave phase information with very high phase sensitivity over a large range of spatial frequencies. It circumvents the limiting trade-off between fringe spacing and visibility of standard off-axis holography. Previous implementations have been limited by the independent drift of biprism and sample. We demonstrate here an advanced drift correction scheme for the hologram series that exploits the presence of an interface of the TEM specimen to the vacuum area in the hologram. It allows to obtain reliable phase information up to 2π/452 at the 1 Å information limit of the Titan 80–300 kV environmental transmission electron microscope used, by applying a moderate voltage of 250 V to a single biprism for a fringe spacing of 1 Å. The obtained phase and amplitude information is validated at a thin Pt sample by use of multislice image simulation with the frozen lattice approximation and shows excellent agreement. The presented method is applicable in any TEM equipped with at least one electron biprism and thus enables achieving high resolution off-axis holography in various instruments including those for in-situ applications. A software implementation for the acquisition, calibration and reconstruction is provided. [Display omitted] [ABSTRACT FROM AUTHOR]