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We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • A heterostructure consisting of two dimensional nanocomposite has been studied. • Transistor and memristor characteristics of heterostructure have been investigated. • By constructing schottky barrier, the current and threshold voltage were modulated. • Resistive switching behavior of heterostructure has gate control function. A novel heterostructure consisting of two dimensional nanocomposite Ni-Co layered double hydroxides (Ni-Co LDHs) and graphene with adjustable Fermi levels has been studied. Transistor characteristics and memristor properties of the Ni-Co LDHs/graphene oxide heterostructure have been investigated. In consideration of Fermi energy of graphene is modulated under external applied voltage, by constructing Schottky barrier, the current and threshold voltage of the device were effectively modulated by applied different gate voltage. The Ni-Co LDHs/graphene oxide heterostructure device exhibits a good endurance property, as well as data retention property is up to 104 s. The resistive switching characteristics are achieved via the conductive filament. The performance and scheme design of this device have a good prospect in memory applications. [ABSTRACT FROM AUTHOR]