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The synaptic behavior of the Ni–Co layered double hydroxide-based memristor was demonstrated. The modulation effect of pulse amplitude, duration, and excitation interval on the conductance of memristor is analyzed. On account of analog resistive switching features, and the nonlinear transmission characteristics of synapses, pulse-time-dependent plasticity, long-term/short-term memory, and "learning" and "forgetting" behaviors of synapses are simulated and carried out. The analog bipolar resistance switch was ascribed to the formation and breakdown of oxygen filaments formed in Ni–Co layered double hydroxides films. This kind of memristor with an analog resistance switch is very promising to provide an implementation method for the development of electronic synapse function. [ABSTRACT FROM AUTHOR]

Two-dimensional NiAl layered double hydroxides (LDHs) were synthesized by urea hydrolysis method. Considering its unique layered structure and high-speed carrier transfer channel, NiAl-LDHs were applied to the active layer of memristor through spin coating process. It is found that the Al/NiAl-LDHs/Al memristor exhibits unipolar resistance switching characteristics, which resistive switching mechanism is attributed to formation and fusing of conductive filaments controlled by oxygen vacancies. Based on this Al/NiAl-LDHs/Al memristor, a D -type latch was constructed. A memtransistor with Si/SiO 2 /graphene oxide (GO)/Al/NiAl-LDHs/Al structure was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. The memtransistor exhibits excellent gate controllability and resistive switching characteristics. Combined with its characteristics, we used the memtransistor to build a D -trigger and verify its memory logical function. The result shows the great potential of layered bimetallic hydroxide materials in the field of resistance switching memory and memory computing. • The unipolar resistive switching characteristics of NiAl-LDHs memristor were investigated. • A D -type latch was constructed using NiAl-LDHs memristor, which logical function was verified. • A memtransistor was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. • A D -trigger was constructed by the memtransistor, which exhibits excellent memory logical function. [ABSTRACT FROM AUTHOR]

[Display omitted] • Memristor based on Co-Ni LDHs hybrid nanosheets is reported. • Devices exhibit nonvolatile resistance switching behavior. • Multiple progressive resistance switches could be achieved. • Memristors were used to simulate synaptic function in biology. • O vacancy is the physical mechanism of the resistance switch behavior. Because of its excellent electrical properties and promising application prospects, two-dimensional materials have attracted extensive research interests of researchers. Among them, Co-Ni layered double hydroxide (LDH) has semiconductor properties and has been widely studied in super capacitor. However, there are few reports about 2D Co-Ni LDHs materials as memristors. In this work, a memristor based on Co-Ni LDHs hybrid nanosheets is reported. After electroforming, Al/Co-Ni LDHs/Al devices exhibit nonvolatile resistance switching behavior. More importantly, multiple progressive resistance switches could be achieved by adjusting the duration or amplitude of the applied pulse (less than the set threshold voltage to prevent a sudden setting process). Given its gradual resistive switching, Co-Ni LDHs-based memristors were used to simulate synaptic function in biology, including: "learning" and "forgetting" process, STP and LTP, PPF characteristics, and STDP. By studying the microstructure, it is proposed that the O vacancy is the physical mechanism of the resistance switch behavior. This work reveals that Co-Ni LDH nanosheets have excellent application potential in memristors, which may open the door to more functions and applications. [ABSTRACT FROM AUTHOR]

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • A heterostructure consisting of two dimensional nanocomposite has been studied. • Transistor and memristor characteristics of heterostructure have been investigated. • By constructing schottky barrier, the current and threshold voltage were modulated. • Resistive switching behavior of heterostructure has gate control function. A novel heterostructure consisting of two dimensional nanocomposite Ni-Co layered double hydroxides (Ni-Co LDHs) and graphene with adjustable Fermi levels has been studied. Transistor characteristics and memristor properties of the Ni-Co LDHs/graphene oxide heterostructure have been investigated. In consideration of Fermi energy of graphene is modulated under external applied voltage, by constructing Schottky barrier, the current and threshold voltage of the device were effectively modulated by applied different gate voltage. The Ni-Co LDHs/graphene oxide heterostructure device exhibits a good endurance property, as well as data retention property is up to 104 s. The resistive switching characteristics are achieved via the conductive filament. The performance and scheme design of this device have a good prospect in memory applications. [ABSTRACT FROM AUTHOR]