1. Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
- Author
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Cheng Liu, Kevin J. Chen, Shu Yang, Zhikai Tang, Shenghou Liu, Qimeng Jiang, and Maojun Wang
- Subjects
Electron mobility ,Materials science ,business.industry ,Gate dielectric ,Transistor ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,Threshold voltage ,law.invention ,Monocrystalline silicon ,Hysteresis ,law ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Layer (electronics) - Abstract
We report a high-performance normally-off Al 2 O 3 /AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al 2 O 3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC-HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm 2 /V·s, a high on/off drain current ratio of ~10 10 , and low dynamic on-resistance degradation.
- Published
- 2014