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Ultrafast carrier thermalization in n-type indium nitride (InN) with an electron concentration of 3.8×1018 cm-3 was investigated by femtosecond transient transmission measurements at room temperature with different wavelengths. An extremely fast carrier external thermalization time on the order of 400 fs was observed, which is much faster than all previous reports. This observed femtosecond thermalization time is consistent with a prediction based on a Coulomb screening effect. Through wavelength dependent and power dependent studies, even with a 400 fs thermalization time, we did not observe any evidence of the existence of the hot phonon effect, which agrees with a recent report that a longitudinal optical phonon lifetime could be shorter than 300 fs in specific InN samples. [ABSTRACT FROM AUTHOR]

The authors demonstrate the generation of coherent acoustic phonons in (111)-strained InGaAs/GaAs multiple quantum wells through piezoelectric coupling by an optical pump-probe technique. Dependence of the induced strain amplitude on the photocarrier density reveals that coherent acoustic phonons can be efficiently excited by the piezoelectric effect with an unscreened built-in electric field. Under high fluence excitation, the generation of coherent acoustic phonons saturates. The experimental results are supported by a macroscopic theoretical model. No backward Raman signal and no zone-folded phonon modes were observed in this low impedance-mismatch and finite-period heterostructure. [ABSTRACT FROM AUTHOR]