1. MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS.
- Author
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Nguyen, Xuan Sang, Yadav, Sachin, Lee, Kwang Hong, Kohen, David, Kumar, Annie, Made, Riko I., Lee, Kenneth Eng Kian, Chua, Soo Jin, Gong, Xiao, and Fitzgerald, Eugene A.
- Subjects
MODULATION-doped field-effect transistors ,METAL organic chemical vapor deposition ,INDIUM gallium arsenide ,EPITAXY ,COMPLEMENTARY metal oxide semiconductors ,SILICON wafers - Abstract
We report on the growth of In0.30Ga0.70As channel high electron mobility transistor (HEMT) epi-layers on a 200-mm Si substrate by metal-organic-chemical-vapor-deposition. The HEMT layers were grown on the Si substrate by using a ~3- \mu \textm thick epitaxial buffer composing of a Ge layer, a GaAs layer, and a compositionally graded and strain relaxed InAlAs layer. The optimized epitaxy has a threading dislocation density of less than 2 \times 10^7 cm−2 and a root mean square surface roughness of ~6.7 nm. The device active layers include a \delta -doped InAlAs bottom barrier, a ~15-nm thick InGaAs channel, a ~8-nm InGaP top barrier layer and a heavily doped InGaAs contact layer. MOSHEMTs with channel length down to 130 nm were fabricated. The devices achieve a peak transconductance of \sim 450 ~\mu \textS/ \mu \textm at V D of 0.5 V. The peak effective mobility ( \mu \text {eff} ) in a device with a channel length of 20 \mu \textm device channel was ~3700 cm2/ \textV \cdot \texts . [ABSTRACT FROM AUTHOR]
- Published
- 2017
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