1. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures.
- Author
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Thi Huong Ngo, Gil, Bernard, Valvin, Pierre, Damilano, Benjamin, Lekha, Kaddour, and De Mierry, Philippe
- Subjects
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ALUMINUM gallium nitride , *QUANTUM efficiency , *LIGHT emitting diodes , *INDIUM gallium nitride , *HETEROSTRUCTURES , *TEMPERATURE effect , *PHOTOLUMINESCENCE - Abstract
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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