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The mid-infrared emission mechanism of line-and-space structures of metallic plates on dielectric materials is substantiated using high conductive n-doped (n++-) GaN–semi-insulating (SI-) GaN microstripe structures on an SI-GaN epitaxial layer, which was veiled when using line-and-space structures of Au plates. The present structure exhibits a few thermal emission lines originating from electric dipoles resonating with the coherent longitudinal optical (LO) phonon-like lattice vibration, which are formed by the local depolarization electric field in the surface n++-GaN/SI-GaN/n++-GaN regions. The energies of the LO-phonon-like modes shift from the original LO-phonon energy of GaN to the lower energy region, which contrasts with the LO-phonon resonant emission from the microstructures on GaAs. These emission lines have another notable feature, i.e. the observed peak energies are independent of the polar emission angle for both s- and p-polarizations, unlike the emissions by surface phonon polaritons showing a significant directive nature of peak energies. The results show that each peak energy of the present emission lines is positioned at the zero-point of the real part of the electric permittivity comprising the components of the transverse optical phonon and other electric dipoles induced by the LO-like modes, excluding the target mode. The significant peak-energy shift of the LO-like phonons is applicable to materials with wide Reststrahlen bands, which contrasts with that of the nearly LO-phonon resonating feature of materials with narrow Reststrahlen bands, such as GaAs. The peak energy shift depending on the emission direction is observed for Au–GaN stripe structures. This property is ascribed to the imperfect Au/GaN interface with surface states through the theoretical analysis of the modified electric permittivity in the surface region, numerical simulation of the local electric field via finite-difference time-domain calculation, and experimental studies on a Ti–GaN structure and emission peaks originating from an LO-like phonon of the α -Al2O3 substrate. [ABSTRACT FROM AUTHOR]

Abstract: Emission properties were investigated in the infrared region for Ga2S3-GeS2-Sb2S3 glasses doped with Ho3+. We performed Judd–Ofelt analysis and lifetime measurements of the 5 I 4, 5 I 5, and 5 I 6 levels, which are the initial levels of the mid-infrared emissions between 3 to 5μm of Ho3+. The quantum efficiencies reached approximately 18%, 64%, and ∼100% for the 5 I 4, 5 I 5, and 5 I 6, respectively. Population analyses were carried out from the relative intensities of the emissions in the near-infrared region. We investigated the dependences on the Ho3+ ion concentration of the population ratio of the initial levels to the final levels, [initial]/[final], of the mid-infrared emissions. The population ratio of [5 I 5]/[5 I 6] decreased with increase of the Ho3+ concentration while those of [5 I 4]/[5 I 5] and [5 I 6]/[5 I 7] increased. Particularly, the former, [5 I 4]/[5 I 5], rapidly increased because of the strong concentration quenching of the 5 I 5 level through cross relaxation. It was found that the population inversion for the 4.8μm emission due to the transition, 5 I 4→5 I 5, was achieved at high Ho3+ concentration in the present experiments. [Copyright &y& Elsevier]

An optimal design of two dimensional (2D) hexagonal photonic bandgap (PBG) resonating micro-optical defect cavity on IV-VI lead salt material has been carried out. The nature of both the transverse electric (TE) and transverse magnetic (TM) band structure for the electromagnetic waves in the periodic triangular lattice pattern is formulated by the well-established plane wave expansion (PWE) method. The defect cavity is engineered to resonate at ~4.17 µm in TM bandgap. The field distribution in the defect cavity has been analyzed based on two very efficient and popular schemes - perturbation correction finite difference (FD) method and finite difference time domain (FDTD) mechanism which is truncated by uniaxial perfectly matched layer (UPML) absorbing boundary condition (ABC). FD method efficiently solves Helmholtz equations to evaluate the field distribution in the semiconducting waveguide for any single spectral wavelength. The numerical results by FD method are re-established by the FDTD scheme that incorporates a precise numerical analysis within a specified wavelength range. [ABSTRACT FROM AUTHOR]