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We present a case study about inkjet printing as a tool for molecular patterning of silicon oxide surfaces with hydrophobic functionality, mediated by n-octadecyltrichlorosilane (OTS) molecules. In contrast to state-of-the-art techniques such as micro contact printing or chemical immersion with subsequent lithography processes, piezo drop-on-demand inkjet printing does not depend on physical masters, which allows an effective direct-write patterning of rigid or flexible substrates and enables short run-lengths of the individual pattern. In this paper, we used mesithylene-based OTS inks, jetted them in droplets of 10 pL on a silicon oxide surface, evaluated the water contact angle of the patterned areas and fitted the results with Cassie's law. For inks of 2.0 mM OTS concentration, we found that effective area coverages of 38% can be obtained. Our results hence show that contact times of the order of hundred milliseconds are sufficient to form a pattern of regions with OTS molecules adsorbed to the surface, representing at least a fragmented, inhomogeneous self-assembled OTS monolayer (OTS-SAM).

In relation to conventional vacuum-based processing techniques inkjet printing enables upscaling fabrication of basic electronic elements, such as transistors and diodes. We present the fully inkjet printed flexible electronic circuits, including organic voltage inverter which can work as a NOT logic gate. For this purpose the special ink compositions were formulated to preparation of gate dielectric layer containing poly (4-vinylphenol) and of the semiconductor layer poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)]. A printed photoxidized poly (3-hexyltiophene) semiconductor was used as the active layer of the resistors. The operation of the printed inverters and NOT logic gates was analyzed based on the DC current–voltage characteristics of the devices. The resistance of the devices to atmospheric air was also tested. Not encapsulated samples stored for three years under ambient conditions. Followed by annealing to remove moisture showed unchanged electrical parameters in comparison to freshly printed samples. [ABSTRACT FROM AUTHOR]

Inkjet technology is commonly used as a nonimpact, versatile, and additive digital manufacturing/printing technology. The flexibility offered by this technology toward deposition accuracy, usage, industrial upscaling relevance, and even testing of various solution processable functional materials, e.g., conductors and insulators, makes it very attractive for printed electronic applications. The focus of this paper is improving the curing time durations for inkjet-printed polymeric dielectric layers. In this paper, enhancement with regard to curing time durations is performed and they were found to be reduced dramatically down to less than 1 min using Infrared (IR) emitters, whereas the state-of-the-art curing demands a minimum of 60 min. Here in the experiments, inkjet printing was done using conductive and dielectric inks for developing fundamental devices like a capacitor. The sintering of silver electrodes was done using a conventional oven, and curing of the polymeric dielectric was done using a conventional oven as well as IR radiation. Observations are made on the basis of the dielectric insulation between the top and bottom electrodes for the capacitors containing dielectrics cured in conventional oven and those which are cured using IR radiation under two different manufacturing platforms, i.e., sheet to sheet and roll to roll. [ABSTRACT FROM PUBLISHER]

This paper demonstrates the manufacturing of inductor coils, capacitors, and rectifying diodes solely using the inkjet printing technology. Industrially relevant printheads from Fujifilm Dimatix were employed to prove the process scalability of the inkjet printing technology by manufacturing hundreds of devices. Organic and inorganic conductors and different organic dielectrics were applied for the manufacturing of electrical devices as well as a p-type organic semiconductor. The manufacturing yield effects of varying printing parameters, such as print resolution (drop spacing) and the size of the printed area on the layer morphology and electrical characteristics, were investigated. [ABSTRACT FROM AUTHOR]

[Display omitted] • An all-in-one MoS 2 -based electrocatalyst for hydrogen evolution is constructed by inkjet printing. • Inkjet-printed 3D architecture contributes to the exposure of active catalytic sites. • 1T-MoS 2 surrounded by graphene reduces the charge-transfer impendence. • Cu contact supports the efficient electron injection from the electrode to catalytic materials. • The facile and scalable avenue allows the fabrication of electrocatalysts with high throughput. 2D transition metal dichalcogenides (TMDs) are emerging as promising alternative electrocatalysts for hydrogen evolution reaction (HER). However, key challenges are the limited density of available activity sites and poor electron accessibility. Herein, Cu film supported MoS 2 -based electrocatalyst with partial 1T phase and 3D architecture is constructed by inkjet printing. We aim to investigate if this configuration could provide largely exposed edge sites and enhance electron transfer for ultra-efficient hydrogen production. Towards this end, an ink containing few-layer MoS 2 nanosheets and reduced graphene oxide (RGO) is firstly prepared by liquid-phase exfoliation, in which semiconducting 2H-MoS 2 is partially transformed to metallic 1 T-MoS 2. We demonstrate that 1) nanosized few-layer MoS 2 spatially patterned by inkjet-printing provides sufficient active site exposure, 2) the 1T-MoS 2 and RGO conductive network reduce the charge-transfer impedance, and 3) the Cu support enhances the catalyst-electrode charge injection. Our all-in-one structure exhibits outstanding HER activities with low overpotential (51 mV at 10 mA cm−2 and 126 mV at 100 mA cm−2) and very low Tafel slope (32 mV dec-1). Also, the as-engineered electrode demonstrates ultrahigh cathodic current density. This work provides a facile, inexpensive, and scalable way for designing and fabricating TMDs-based electrocatalysts with excellent HER activity. [ABSTRACT FROM AUTHOR]