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This article describes a modification and an experiment conducted on a solid-state pulsed power modulator (SSPPM) for medical linear particle accelerator (LINAC) applications. Depending on the operating condition of the magnetron, an existing design of an insulated-gate bipolar transistor (IGBT)-based modulator is modified, from a positive pulse generator to a negative pulse generator. The design of the gate driver circuit of the pulse discharging IGBTs is also slightly changed to secure reliability against the arc condition. The developed modulator has the following maximum output—pulse voltage of −40 kV, pulse current of −100 A, pulsewidth of 5 μs, and pulse repetition rate of 250 Hz. By adapting the proposed design to the pulsed power modulator for driving the magnetron, high peak and average power densities of 43 kW/L and 48.9 W/L, respectively, can be achieved. The experimental results from various tests conducted using a resistor load, including a rated operation and an arc protection, verify the robustness and utility of the developed SSPPM for medical LINAC applications. An experiment using a 9.3-GHz 1.7-MW X-band magnetron is also conducted. The developed modulator achieved a successful arc protection operation for the arc generated in the waveguide during the magnetron drive test. [ABSTRACT FROM AUTHOR]

This paper proposes a new gate driving circuit for the solid-state pulsed power modulator (SSPPM) based on semiconductor devices. The proposed circuit can be easily implemented by applying a short gate signal to the bypass insulated gate bipolar transistor (IGBT), i.e., switches connected in parallel with the load instead of a pull-down resistor. The IGBT_BPs are turned on at the end-point of the pulse. It can quickly discharge the pulse voltage applied to the load. In addition, it can operate as bypass diode, which is used to protect the semiconductor switches when the gate signal malfunctions, by using the antiparallel diode of the IGBT. Moreover, power loss in the pull-down resistor used to achieve fast falling pulses can be eliminated by turning off the IGBT while applying the pulse state. Thus, the proposed circuit can be used for implementing SSPPM with small values of falling time and high efficiency. The circuit configuration, operational principle, relevant analysis results, and a PSpice modeling are presented and verified by the 10-kV SSPPM. [ABSTRACT FROM PUBLISHER]