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Condition monitoring is a cost-effective means to reduce the unscheduled maintenance cost of insulated gate bipolar transistor (IGBT) modules. The junction to case thermal resistance $R_{\mathrm {thjc}}$ is considered as a critical health indicator of IGBT module solder layer. However, thermal interface materials’ (TIMs) deterioration will not only reduce the heat dissipation performance but also affects the accuracy of $R_{\mathrm {thjc}}$ monitoring of IGBT modules. This article investigates the effect of thermal grease deterioration on $R_{\mathrm {thjc}}$ monitoring of IGBT module. First, it is found that the thermal grease deterioration will lead to the decrease of monitored $R_{\mathrm {thjc}}$ of IGBT module under the same health status of IGBT solder layer, despite that the thermal resistance of TIM increasing as deterioration of the TIM takes place. That is, the same monitored increment ratio of $R_{\mathrm {thjc}}$ caused by the solder fatigue may correspond to different health status of the IGBT module, which cannot accurately reflect its actual health status. Then, a compensation strategy for thermal resistance monitoring based on the TIM aging rate is proposed, which uses the established mapping relationship to decouple the negative coupling part of TIM degradation. The compensated thermal resistance can better reflect the actual health status of the IGBT module and approximately eliminate the negative impact. Finally, the feasibility of the proposed compensation strategy is verified by finite element model (FEM) analysis and experiments. [ABSTRACT FROM AUTHOR]

In this paper, we propose to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature. This method works during the shutoff period of IGBT module where the case temperature is in the cooling phase By establishing the relationship between the Cauer-type thermal RC parameters and the time constants of case temperature cooling curves, thermal parameters of the IGBT module can be identified. The proposed method is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results, which is quite challenging for the current case temperature monitoring methods. Moreover, it enables the detection of thermal resistance and thermal capacitance of the TIM and that of the IGBT module at the same time. Experimental tests are performed to validate the accuracy and feasibility of the proposed method. Moreover, impacts of the junction temperature, case temperature sensing position, and thermal coupling on the monitored results are analyzed. [ABSTRACT FROM AUTHOR]