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This paper proposes a new gate driving circuit for the solid-state pulsed power modulator (SSPPM) based on semiconductor devices. The proposed circuit can be easily implemented by applying a short gate signal to the bypass insulated gate bipolar transistor (IGBT), i.e., switches connected in parallel with the load instead of a pull-down resistor. The IGBT_BPs are turned on at the end-point of the pulse. It can quickly discharge the pulse voltage applied to the load. In addition, it can operate as bypass diode, which is used to protect the semiconductor switches when the gate signal malfunctions, by using the antiparallel diode of the IGBT. Moreover, power loss in the pull-down resistor used to achieve fast falling pulses can be eliminated by turning off the IGBT while applying the pulse state. Thus, the proposed circuit can be used for implementing SSPPM with small values of falling time and high efficiency. The circuit configuration, operational principle, relevant analysis results, and a PSpice modeling are presented and verified by the 10-kV SSPPM. [ABSTRACT FROM PUBLISHER]

This paper proposes a solid-state pulsed power modulator (PPM) with fast rising/falling time and high repetition rates to drive pockels cells. Since the proposed circuit is based on the modular structure using silicon carbide (SiC) metal–oxide silicon field-effect transistors (MOSFETs) for bypass devices as well as for main switches, it can achieve fast switching speed and high reliability. In addition, by a control scheme employing the voltage difference, the proposed circuit can accomplish a high repetition rate and short pulsewidth. Design and implementation of 1.8-kV PPMs with repetition rate of 1 MHz and rising/falling time below 6 ns are presented. Also, important issues for the practical use of the SiC-based PPM are discussed. Experimental results from the developed PPMs are shown to verify the proposed works. [ABSTRACT FROM AUTHOR]

This paper describes the design, implementation, and comparison of high-voltage capacitor chargers for a solid-state pulsed power modulator (SSPPM). The three different converter topologies are a series resonant converter operating at a discontinuous conduction mode with switching frequency control (SRC_DCM_SFC), a series resonant converter operating at a continuous conduction mode with phase shifted pulse width modulation control (SRC_CCM_PSPWMC), and a series–parallel resonant converter operating at the CCM with SFC (SPRC_CCM_SFC). On the basis of these converter topologies, 10\-kW\rm{average} high-voltage capacitor chargers are designed for the three types of SSPPMs, which have the following maximum output specifications: 1) SRC_DCM_SFC: 60 kV, 300 A, 3 kpps, and 50 \mus; 2) SRC_CCM_PSPWMC: 10 kV, 50 A, 50 kpps, and 10 \mus; and 3) SPRC_CCM_SFC: 40 kV, 150 A, 7 kpps, and 10 \mus. Although the pulse output specifications are different, it is worth comparing the resonant inverter topologies and the control methods from the viewpoint of the losses, control characteristics, and merits and demerits of the high-voltage capacitor chargers. From the analysis and investigation of the three resonant inverters, the design procedure, including the determination of the resonant tank parameters, is provided, which considers the design of the high-voltage capacitor charger. PSPICE simulation is used to elucidate the effects of the resonant tank structure and its parameters, and the resonant current waveform and losses of the Insulated Gate Bipolar Transistor are compared. Finally, experiments for each charger are performed under various load conditions, and the comparison results of the three capacitor chargers, including the conduction and switching losses, control characteristics, and overall efficiency, are discussed in this paper. [ABSTRACT FROM AUTHOR]