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Wide band gap semiconductor device silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages and are considered to be the most promising alternative to silicon (Si) insulated gate bipolar transistors (IGBTs) in low-/medium-voltage fields. However, a faster switching speed results in more serious electromagnetic disturbance problems in the application of SiC MOSFET. In this paper, an experiment system is established to measure the radiated disturbance of a single SiC MOSFET module operating at 9 kHz–300 MHz. The radiated electric fields of the SiC MOSFET module are mainly concentrated within 160 MHz. The switching voltage and radiated disturbance of the Si IGBT module are measured and compared with those of the SiC MOSFET module. The voltage of the SiC MOSFET has a faster change rate and a higher overshoot, which results in the radiated electric fields of SiC MOSFET module being 5–10 dB higher than those of the Si IGBT module below 8 MHz. The measurement results in the time-domain and frequency-domain correspond. A detailed model of a SiC MOSFET module is established and the radiated electric fields are calculated using the method of moments (MOM). The calculated results show the effectiveness of the model for radiated disturbance prediction. In this paper, the radiated electric fields of a SiC MOSFET module are measured and analyzed, and the calculation model can be used to further evaluate the radiated disturbance characteristics of SiC MOSFET and influencing factors. [ABSTRACT FROM AUTHOR]

Insulated gate bipolar transistor (IGBT) has been widely used in the voltage-source-converter-based high-voltage direct current (VSC-HVDC). However, the electromagnetic interference (EMI) generated by its fast switching process affects the normal operation of the surrounding power equipment. The switching voltage and current of IGBT are the main sources of EMI. Different driving circuit parameters result in different IGBT switching characteristics. In this article, the switching model of IGBT is introduced first and the influence of driving parameters on EMI sources is analyzed. Based on the conducted EMI experiment platform of an IGBT module, the time-domain waveforms of switching voltage and current under different driving parameters are obtained and compared with the model. Then the interference voltage spectrums are measured by an EMI receiver under different driving parameters. The influence of driving parameters on conducted EMI in 0.15–30 MHz is then analyzed and explained by combining the result of time domain and frequency domain. This article comprehensively analyzes the relationship between driving parameters and EMI sources and summarizes the influence characteristics of driving parameters on common-mode (CM) and differential-mode (DM) noise. The conclusions can help the parameters design of driving board, which can effectively reduce the conducted EMI of the converter. [ABSTRACT FROM AUTHOR]