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This paper proposes a solid-state pulsed power modulator (PPM) with fast rising/falling time and high repetition rates to drive pockels cells. Since the proposed circuit is based on the modular structure using silicon carbide (SiC) metal–oxide silicon field-effect transistors (MOSFETs) for bypass devices as well as for main switches, it can achieve fast switching speed and high reliability. In addition, by a control scheme employing the voltage difference, the proposed circuit can accomplish a high repetition rate and short pulsewidth. Design and implementation of 1.8-kV PPMs with repetition rate of 1 MHz and rising/falling time below 6 ns are presented. Also, important issues for the practical use of the SiC-based PPM are discussed. Experimental results from the developed PPMs are shown to verify the proposed works. [ABSTRACT FROM AUTHOR]

This study presents a simplified design for a solid state pulsed power modulator (SSPPM) based on a power cell structure. Similar to the Marx generator, the power cell structure has advantages such as reliability and modularity. In addition, the proposed SSPPM includes a capacitor charger that is simple and compact. The operating principle of, and the design considerations taken for, the SSPPM are discussed from a practical viewpoint. Based on a reasonable approximation, simplified design equations are developed for a capacitor charger and a high-voltage pulse-switching part, which are comprised of an LCC resonant converter and a power stage, respectively. Accordingly, detailed design procedures are proposed to develop the SSPPM with the following specifications: 40 kV, 20 A, 300 μs, 200 Hz, and 50 kW. The experimental results verify the specifications at the rated operating condition with an efficiency of 92.4%, and also confirm reliable arc-protection performance. Finally, the proposed design methodology, which utilizes simplified equations, can be used for designing an SSPPM based on the power cell structure for extensive applications. [ABSTRACT FROM PUBLISHER]

This paper proposes a new gate driving circuit for the solid-state pulsed power modulator (SSPPM) based on semiconductor devices. The proposed circuit can be easily implemented by applying a short gate signal to the bypass insulated gate bipolar transistor (IGBT), i.e., switches connected in parallel with the load instead of a pull-down resistor. The IGBT_BPs are turned on at the end-point of the pulse. It can quickly discharge the pulse voltage applied to the load. In addition, it can operate as bypass diode, which is used to protect the semiconductor switches when the gate signal malfunctions, by using the antiparallel diode of the IGBT. Moreover, power loss in the pull-down resistor used to achieve fast falling pulses can be eliminated by turning off the IGBT while applying the pulse state. Thus, the proposed circuit can be used for implementing SSPPM with small values of falling time and high efficiency. The circuit configuration, operational principle, relevant analysis results, and a PSpice modeling are presented and verified by the 10-kV SSPPM. [ABSTRACT FROM PUBLISHER]