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Nonlinear phenomena in electrical contacts deteriorate the quality of communication systems with the production of passive intermodulation (PIM). The theoretical evaluation of PIM as a function of the physical parameters of the contact is rather complicated. Standard linear and macroscopic contact models do not take into account all microscopic aspects of the contact responsible for its nonlinear behavior. For the above reason, an accurate analysis of the PIM should be carried out by using microscopic contact models, defined by dozens of parameters, some of which cannot be precisely measured or estimated. This article presents a statistical analysis of the PIM level by taking into account a possible uncertain interval for the physical parameters of the contact. Such statistical interpretation is then used in order to identify the most relevant physical parameters for the PIM generation via a sensitivity analysis, through the use of a surrogate model that speeds up the huge amount of PIM computations. The results of the sensitivity analysis allow us to build a simpler model depending only on few dominant parameters. [ABSTRACT FROM AUTHOR]

This article presents an innovative technique for the black-box modeling of the conductive emissions of switching circuits from external observations. The proposed methodology relies on the robust and elegant theory of periodically switched linear systems, providing the user with a tool for the generation of frequency-domain augmented linear time-invariant equivalents. The obtained models offer both a remarkable accuracy for different supply conditions and a deep understanding of the inherent switching mechanisms of this class of devices. The proposed framework also enables the derivation of a simplified enhanced Norton representation which outperforms the classical state-of-the-art models based on linear time-invariant approximations. Model parameters are computed via a blind procedure based only on two measurements. The feasibility and strength of the proposed approach are demonstrated on a dc–dc boost power converter and on a dc electrical motor via the prediction of their conducted disturbances. [ABSTRACT FROM AUTHOR]

This brief presents a frequency-domain approach for the steady-state analysis of pulsewidth-modulated converters and switched circuits with nonideal switching behavior. The proposed strategy generalizes recent methodologies based on the Fourier expansion of the steady-state responses of a periodically switching circuit and on the simulation of an augmented linear-time-invariant system. This system is now also given an interpretation in terms of an equivalent circuit, which is simulated at a single frequency point to solve for all the harmonics. The method offers a modular topological approach that is combined with standard tools for circuit analysis and enables the simulation of networks with an arbitrary number of switches and driving mechanisms. Single, multiple, and possibly nonideal commutation events within the switching period are handled in the same framework, without additional complexity. The technique allows for the full frequency-domain characterization of both the functional and the noisy behavior of the circuit responses. The feasibility and strength are demonstrated via comparisons with simulations and measurements on two application examples, i.e., a full-bridge single-phase inverter and a dc–dc boost converter. [ABSTRACT FROM AUTHOR]

The ever-increasing impact of uncertainties in electronic circuits and systems is requiring the development of robust design tools capable of taking this inherent variability into account. Due to the computational inefficiency of repeated design trials, there has been a growing demand for smart simulation tools that can inherently and effectively capture the results of parameter variations on the system responses. To improve product performance, improve yield and reduce design cost, it is particularly relevant for the designer to be able to estimate worst-case responses. Within this framework, the article addresses the worst-case simulation of lumped and distributed electrical circuits. The application of interval-based methods, like interval analysis, Taylor models and affine arithmetic, is discussed and compared. The article reviews in particular the application of the affine arithmetic to complex algebra and fundamental matrix operations for the numerical frequency-domain simulation. A comprehensive and unambiguous discussion appears in fact to be missing in the available literature. The affine arithmetic turns out to be accurate and more efficient than traditional solutions based on Monte Carlo analysis. A selection of relevant examples, ranging from linear lumped circuits to distributed transmission-line structures, is used to illustrate this technique. [ABSTRACT FROM PUBLISHER]

This paper addresses an integrated circuit (IC) modeling procedure for mixed-signal immunity simulations of communication networks. The procedure is based on a gray-box approach, modeling (IC) ports with a physical circuit and the internal links with a behavioral block. The parameters are estimated from time and frequency domain measurements, allowing accurate and efficient reproduction of nonlinear device switching behaviors. The effectiveness of the modeling process is verified by applying the proposed technique to a controller area network (CAN) transceiver, involved in a direct power injection (DPI) immunity test on a data communication link. The obtained model is successfully implemented in a VHDL-analog mixed-signal (AMS) solver to predict both the functional signals and the RF noise immunity at component level. [ABSTRACT FROM PUBLISHER]

This paper delivers a considerable improvement in the framework of the statistical simulation of highly nonlinear devices via polynomial chaos-based circuit equivalents. Specifically, a far more efficient and “black-box” approach is proposed that reduces the model complexity for nonlinear components. Based on recent literature, the “stochastic testing” method is used in place of a Galerkin approach to find the pertinent circuit equivalents. The technique is demonstrated via the statistical analysis of a low-noise power amplifier and its features in terms of accuracy and efficiency are highlighted. [ABSTRACT FROM AUTHOR]

This letter addresses the simulation of the steady-state response of switching power converters. The proposed approach is based on the interpretation of the voltage and current variables of a periodically switched linear circuit in terms of a series expansion and on the generation of augmented time-invariant constitutive relations of the circuit elements. The circuit solution is obtained from an augmented time-invariant nodal equation generated from topological information and circuit inspection only. The feasibility and strength of the approach are demonstrated on a dc-dc boost converter. [ABSTRACT FROM AUTHOR]

This letter addresses the stochastic analysis of nonlinear switching power converters via an augmented circuit equivalent and a single deterministic SPICE simulation. The proposed approach is based on the expansion of the constitutive relations of the circuit elements in terms of orthonormal polynomials within the well-established framework of polynomial chaos. The feasibility and strength of the method are demonstrated on a dc-dc boost converter described by either detailed nonlinear components or via its averaged linear circuit. Excellent modeling accuracy as well as remarkable speed-ups compared to traditional sampling-based approaches are achieved. [ABSTRACT FROM AUTHOR]

This paper addresses the generation of an enhanced stochastic model of a carbon nanotube interconnect including the effects of process variation. The proposed approach is based on the expansion of the constitutive relations of state-of-the-art deterministic models of nanointerconnects with uncertain parameters in terms of orthogonal polynomials. The method offers comparable accuracy and improved efficiency with respect to conventional methods like Monte Carlo in predicting the statistical behavior of the electrical performance of next-generation data links. An application example involving both the frequency- and time-domain analysis of a realistic nanointerconnect concludes this paper. [ABSTRACT FROM AUTHOR]

This paper addresses the generation of behavioral models of digital integrated circuits (ICs) for signal and power integrity simulations. The proposed models are obtained by external measurements carried out at the device ports only and by the combined application of specialized state-of-the-art modeling techniques. The present approach exploits a behavioral formulation, leading to models reproducing all the behavior of the IC ports as the input/output buffers and the core power delivery network. The modeling procedure is demonstrated for a commercial nor Flash memory in 90-nm technology housed by a specifically designed test fixture. [ABSTRACT FROM PUBLISHER]

The growing importance of signal integrity (SI) analysis in integrated circuits (ICs), revealed by modern system-in-package methods, is demanding for new models for the IC sub-systems which are both accurate, efficient and extractable by simple measurement procedures. This paper presents the contribution for the establishment of an integrated IC modeling approach whose performance is assessed by direct comparison with the signals measured in laboratory of two distinct memory IC devices. Based on the identification of the main blocks of a typical IC device, the modeling approach consists of a network of system-level sub-models, some of which with already demonstrated accuracy, which simulated the IC interfacing behavior. Emphasis is given to the procedures that were developed to validate by means of laboratory measurements (and not by comparison with circuit-level simulations) the model performance, which is a novel and important aspect that should be considered in the design of IC models that are useful for SI analysis. [ABSTRACT FROM PUBLISHER]

The modeling of the core power-delivery network of digital integrated circuits (ICs) is addressed by a black-box approach, leading to an n-port equivalent of the IC. The model parameters are estimated from external measurements carried out at the IC ports. The modeling procedure is demonstrated for a commercial NOR Flash Memory in 90 nm technology housed by a specifically-designed test fixture. [ABSTRACT FROM PUBLISHER]

This letter proposes a general and effective decoupled technique for the stochastic simulation of nonlinear circuits via polynomial chaos. According to the standard framework, stochastic circuit waveforms are still expressed as expansions of orthonormal polynomials. However, by using a point-matching approach instead of the traditional stochastic Galerkin method, a transformation is introduced that renders the polynomial chaos coefficients decoupled and therefore obtainable via repeated non-intrusive simulations and an inverse linear transformation. As discussed throughout the letter, the proposed technique overcomes several limitations of state-of-the-art methods. In particular, the scalability is hugely improved and tens of random parameters can be simultaneously treated within the polynomial chaos framework. Validating application examples are provided that concern the statistical analysis of microwave amplifiers with up to 25 random parameters. [ABSTRACT FROM PUBLISHER]