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This article presents a simulation model of silicon carbide (SiC) power MOSFET that accurately predicts both the static and dynamic third-quadrant behavior without compromising the first-quadrant's accuracy. Unlike existing models, this model features an asymmetric third-quadrant behavior for MOSFET characteristics necessary for the accurate synchronous rectifier simulations. Moreover, it includes the gate-dependent body diode behavior, essential for the accurate prediction of freewheeling high-side device behavior in half-bridge configurations with significant gate voltage oscillation. The model also includes reverse recovery characteristics for the accurate overshoot and power loss prediction. Despite having these added features, the model demonstrates good convergence and efficiency due to the replacement of conditional piecewise equations with continuous ones consisting of weighted variables. The model's convergence capability and efficiency have been verified by simulating a five-level cascaded H-bridge multilevel inverter. The model's superior efficiency and accuracy have been validated by comparing it with an established SiC power MOSFET model. Also, an easy-to-follow parameter extraction procedure is documented that only requires data commonly available in commercial datasheets for broader utility. Considering accuracy, efficiency, and convenience, the model is useful for all power electronics converter applications. [ABSTRACT FROM AUTHOR]

This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n- and p-channel devices. The model can predict the detailed switching waveforms of these technologies based on its charge-based formulation. Further, this compact IGBT model is presented alongside a unique datasheet-driven parameter extraction process. The parameter extraction process enables users to quickly extract model parameters from data typically published without the need of taking physical measurements. The model has been validated with both Si and SiC devices for static and dynamic characteristics. The SiC IGBTs used for validation are a 12.5-kV n-channel device and a 13-kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS Corp. (Milpitas, CA, USA). This is the only IGBT model that predicts the performance of both n- and p-channel, Si and SiC devices, providing more freedom for the development of complex power electronics circuit designs. The convergence of the model has been verified by implementing a complex circuit consisting of both a dc–dc converter and a dc–ac inverter. The results presented here show that the unified model can be used to describe the behavior of a wide range of Si and SiC IGBT circuits. This paper is accompanied by a Verilog-A source code and a power point file demonstrating the model parameter extraction sequence. [ABSTRACT FROM AUTHOR]