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This paper presents a galvanically isolated dc-dc converter with multi-channel communication exploiting a single isolation transformer. The proposed architecture makes compliant both regulated output power and data transmission on the same isolation physical link by using ASK modulation of the power signal and data/control signal multiplexing. The dc-dc converter consists of two integrated chips fabricated in 0.18- $\mu \text{m}$ BCD and 0.13- $\mu \text{m}$ CMOS technologies, respectively, along with a thick polyimide transformer chip able to comply with reinforced isolation requirements. The dc-dc converter delivers an isolated output power up to 50 mW at 3.3-V output voltage, while providing three data channels with a data rate up to 10 Mb/s. [ABSTRACT FROM AUTHOR]

This paper presents a double-isolated dc-dc converter exploiting integrated LC galvanic barriers. The converter consists of only two dice both fabricated in a 0.35- $\mu \text{m}$ BCD technology with a thick-oxide back-end for 5-kV galvanic isolation. It uses a novel architecture to transmit power and the control feedback signal across two double isolation barriers, which are performed by integrated isolation capacitors and transformers. A resonant mode operation for the isolation networks is exploited to boost efficiency with respect to traditional converter schemes based on series-connected isolation components. Measurements of the dc-dc converter at 3.3-V power supply demonstrate 100-mW dc output power with a power efficiency of 16.8% at a regulated output voltage of 3.3 V. [ABSTRACT FROM AUTHOR]

This paper presents a fully integrated galvanically isolated dc–dc converter with data communication. The converter, which is fabricated in a 0.35- \mu \textm BCD technology, is made up of only two silicon dice and adopts two 6-kV on-chip transformers. It takes advantage of a customized architecture, which uses the isolated power control link to transfer bidirectional half-duplex data, thus reducing the overall silicon area and package size. The proposed dc–dc converter delivers up to 93-mW output power with 19% maximum power efficiency and an output voltage ranging from 2.4 V to 3.3 V, while achieving a data rate up to 50 Mb/s. [ABSTRACT FROM AUTHOR]

This paper presents a galvanically isolated power transfer system based on two inductively coupled CMOS oscillators with on-chip isolation transformer. The oscillators share the same current and are loaded by an integrated transformer that performs the combining of the oscillation signals at its secondary winding output. By using a thick inter-metal oxide layer for the integrated transformer, a galvanic isolation rating as high as 5 kV is guaranteed. Thanks to the proposed circuit topology, a 300-mW dc-ac power conversion performance with an excellent 36.5% power efficiency was achieved in a 0.8-\mum CMOS technology at 5-V power supply. A complete dc-dc converter was also demonstrated by including a rectifier on a second die. An output power of 200 mW at 8-V output voltage with power efficiency better than 27% was measured. [ABSTRACT FROM AUTHOR]