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In this work, the perylene-monoimide/n-Si (100) Schottky structures have been fabricated by spin coating process. We have studied the capacitance-voltage ( C- V) and conductance-voltage ( G- V) characteristics of the Au/perylene-monoimide/n-Si diodes at 500 kHz before and after Co γ-ray irradiation. The effects of Co γ -ray irradiation on the electrical characteristics of a perylene-monoimide/n-Si Schottky diode have been investigated. A decrease both in the capacitance and conductance has been observed after Co γ -ray irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of Co γ-ray irradiation. Some contact parameters such as barrier height (Φ) interface state density ( N) and series resistance ( R) have been calculated from the C- V and G- V characteristics of the diode before and after irradiation. It has been observed that the Φ and N values are decreased after the applied radiation, while the R value is increased. [ABSTRACT FROM AUTHOR]

Abstract: We report the first investigation of the frequency dependent effects of gamma irradiation on interface state density and series resistance determined from capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics in SnO2/n-Si structures prepared by spray deposition method. The samples were irradiated using a 60Co γ-ray source at 500kGy at room temperature. The C–V and G–V measurements of the samples were performed in the voltage range −6V to 2V and at 10kHz, 100kHz, 500kHz and 1MHz at room temperature before and after 500kGy irradiation. The measurement capacitance and conductance are corrected for series resistance. It has been seen that the value of the series resistance R s of sample decreases from 204Ω to 55.4Ω with increasing the frequency before irradiation while it decreases from 248Ω to 60Ω with increasing frequency at 500kGy irradiation. It has been found that and D it values of MOS structure increases up to 100kHz and then decreases up to 1MHz while the R s increases with increasing irradiation dose for our sample. The interface state density D it ranges from 1.83×1013 cm−2 eV−1 for before irradiation to 1.54×1013 cm−2 eV−1 for 500kGy irradiation dose at 500kHz and decreases with increasing frequency. [Copyright &y& Elsevier]

We have reported a detailed investigation of frequency dependent properties of the Au/perylene-monoimide (PMI)/n-Si Schottky diodes in this study. Schottky diodes based on PMI have been fabricated by spin coating method. The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics have been measured in the frequency range from 30kHz to 1MHz at room temperature. The values of measured capacitance and conductance under both reverse and forward bias have been corrected for the effect of series resistance to obtain the real diode capacitance and the conductance values. The density of interface states ( ) distribution profiles as a function of frequency has been extracted from the corrected C–V and G–V measurements. Interface trap states of the PMI/n-Si Schottky device have decreased by increasing the applied frequency and were found to be 8.13×1011 and 1.75×1011 eV−1 cm−2 for 30kHz and 1MHz, respectively. [ABSTRACT FROM AUTHOR]

Abstract: The electrical characterization of the In/p-Si Schottky diode has been investigated by conductance and capacitance–frequency techniques. The characteristic parameters of the interface states have been determined from the capacitance–frequency and conductance–frequency measurements. The capacitance of the In/p-Si Schottky diode decreases with increasing frequency. The increase in capacitance at lower frequencies results from the presence of interface states. The peak observed in the conductance curve of the In/p-Si diode indicates the presence of an interfacial layer in the In/p-Si Schottky barrier. The interface-state parameters, interface-state density D it and relaxation time τ of the In/p-Si diode were calculated. The interface-state density was found to vary from 7.82×1012 eV−1 cm−2 in (0.53−E v)eV to 8.01×1012 eV−1 cm−2 in (0.28−E v)eV. Furthermore, the relaxation time was found to vary from 4.543×10−8 s in (0.53−E v)eV to 4.435×10−8 s in (0.28−E v)eV. [Copyright &y& Elsevier]