Search

Your search keyword '"Chung, Cheng Yueh"' showing total 1 results
Start Over Author "Chung, Cheng Yueh" Topic interface trap density
1 results on '"Chung, Cheng Yueh"'

1. Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC.

Author

Lee, Kung-Yen, Chang, Yu-Hao, Huang, Yan-Hao, Wu, Shuen-De, Chung, Cheng Yueh, Huang, Chih-Fang, and Lee, Tai-Chou

Subjects
*METALS at low temperatures, *NITROGEN, *INTERFACES (Physical sciences), *SILICON oxide, *ANNEALING of metals, *ELECTRIC breakdown
Abstract

Highlights: [•] Wet oxidation at 950°C followed by NO anneal at 1175°C reduces the interface trap density to 4–6×1011 cm−2 eV−1. [•] The positive flat band voltage shift caused by low temperature wet oxidation can be suppressed by the following NO anneal. [•] The oxide breakdown fields for Al- and N-implanted C-face 4H-SiC samples are about 1.5 and 5MVcm−1, respectively. [•] The oxide breakdown field of dry oxidation at 950°C is the same as that of wet oxidation at 950°C. [ABSTRACT FROM AUTHOR]

Published
2013
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results