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Discusses the focused ion beam stimulated deposition of aluminum from trimethylamine alane, a white solid and triethylamine alane, a colorless liquid. Initiation of growth on silicon and silicon dioxide substrates; Enhancement of nucleation; Features of the aluminum.

A new technique using ion beams to produce patterned thin films of the high-temperature perovskite superconductor YBa2Cu3O7-x from spin-on metalorganic precursors is described. Spin-coated precursor films are irradiated through a stencil mask with 2.5 MeV He+ ions, developed in solvent to remove unexposed material, and the remaining patterns are pyrolyzed. Black films of YBa2Cu3O7-x with pattern dimensions on the millimeter scale exhibit orientation with the c axis perpendicular to the film after heat treatments of 990 °C for 3 min. The conductivity of a highly oriented, ∼0.4-μm-thick patterned film is characterized by onset of the superconducting transition at 84 K and zero resistivity at 68 K, similar to those of an unirradiated film given the same thermal treatment. Studies on the nature of the ion beam exposed material are discussed. [ABSTRACT FROM AUTHOR]

Presents a correction to an article on focused ion beam stimulated deposition of aluminum from trialkylamine alanes.

Submicron Pd features have been fabricated on Si and SiO2 substrates by microfocused Ga+ ion beam exposure of spin-on palladium acetate, [Pd(O2CCH3)2]3, films. Electrical conductivity measurements were made on the exposed features as a function of ion dose for nominal linewidths of 1 and 10 μm. The sheet conductivity in the two cases is comparable and increases dramatically in the exposure dose range between 2×1014 and 5×1014 ions/cm2. The conductivity of the exposed lines is further increased after heating in a hydrogen furnace. Potential applications of this process include mask repair and integrated circuit modification. [ABSTRACT FROM AUTHOR]