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Your search keyword '"Simons, David"' showing total 7 results
Start Over Author "Simons, David" Topic ion implantation
7 results on '"Simons, David"'

3. Al and B ion-implantations in 6H- and 3C-SiC.

Author

Rao, Mulpuri V., Griffiths, Peter, Holland, O. W., Kelner, G., Freitas, J. A., Simons, David S., Chi, P. H., and Ghezzo, M.

Subjects
ION implantation, BORON, ALUMINUM
Abstract

Presents information on a study which evaluated the thermal stability of low and high energy aluminum and boron implants performed in n-type 6H- and 3C-SiC devices. Experimental details; Results and discussion; Conclusions.

Published
1995
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4. Ion implantation into (x11)A-oriented InP and GaAs (x≤4).

Author

Rao, Mulpuri V., Dietrich, Harry B., Klein, P. B., Fathimulla, Ayub, Simons, David S., and Chi, Peter H.

Subjects
ION implantation, INDIUM, PHOSPHORUS, GALLIUM arsenide
Abstract

Presents a study which analyzed ion implantation into (x11)A-oriented semi-insulating indium-phosphorus and gallium arsenide substrates. Details on the experiment; Results of the study; Conclusions.

Published
1994
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5. Range statistics and Rutherford backscattering studies on Fe-implanted In0.53Ga0.47As.

Author

Gulwadi, Sadanand M., Rao, Mulpuri V., Simons, David S., Holland, O. W., Hong, Won-Pyo, Caneau, Catherine, and Dietrich, Harry B.

Subjects
ION implantation, BACKSCATTERING, MOMENTS method (Statistics), SECONDARY ion mass spectrometry
Abstract

Presents range statistics and Rutherford backscattering studies on iron (Fe)-implanted InGaAs layers. Statistical moments computed from secondary-ion mass spectrometry for various Fe implant energies; Impact of ion implantation of Fe on the implantation-induced damage in InGaAs layers; Factor that leads to unpredictable resistivity in the sample.

Published
1991
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6. MeV Be implantation in GaAs.

Author

Rao, Mulpuri V., Thompson, Phillip E., Dietrich, Harry B., and Simons, David S.

Subjects
ION implantation, GALLIUM arsenide, SECONDARY ion mass spectrometry
Abstract

Presents a study that investigated MeV Be implantations in semi-insulating gallium arsenides. Technique used in preparing the metals; Range statistics of the implants in gallium arsenide; Analysis of the smoothed plots of the measured secondary ion mass spectrometry atomic density depth distributions for MeV Be.

Published
1990
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7. 10–20 MeV energy range Si implantations into InP:Fe.

Author

Nadella, Ravi K., Rao, Mulpuri V., Simons, David S., Chi, Peter H., and Dietrich, Harry B.

Subjects
SILICON, ION implantation, INDIUM phosphide, IRON
Abstract

Presents a study that performed silicon implantations into indium phosphide; iron. Method of the study; Results and discussion; Conclusion.

Published
1991
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