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Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at the application requirements of β-Ga2O3 in space photoelectric devices, this work studies the influence of 40 MeV Si ion irradiation on the microstructure and optical properties of β-Ga2O3 epi-wafers. Raman spectroscopy analysis confirms that Si ion irradiation destroys the symmetric stretching mode of tetrahedral–octahedral chains in β-Ga2O3 epi-wafers, and the obtained experimental evidence of irradiation leads to the enhanced defect density of VO and VGa–VO from x-ray photoelectron spectroscopy. Combined with first-principles calculations, we conclude that most configurations of VO and VGa–VO are likely non-radiative, leading to quenching of experimental photoluminescence intensity. Unraveling optical degradation mechanism and predicting the optical application of β-Ga2O3 devices in the space environment by combining ground irradiation experiments with first-principles calculations still be one of the focuses of research in the future. [ABSTRACT FROM AUTHOR]

Characteristics of displacement defects in the 3CK3637 PNP bipolar junction transistors (BJTs) irradiated by 10 MeV Si, 40 MeV Si and 25 MeV C ions are investigated in this paper. Electrical parameters are measured in-situ using KEITHLEY a 4200-SCS semiconductor characterization system during irradiations. The radiation-induced defects caused by various ions for different displacement damage doses are characterized by deep level transient spectroscopy (DLTS). Experimental results show that the electrical degradation increases with increasing irradiation fluence. It is worth noting that the increase trend of the electrical degradation is different for the three types of ions. For the 10 MeV Si ions, the electrical degradation linearly increases, while, for the 40 MeV Si and 25 MeV C ions, the electrical degradation increases nonlinearly. The change in the reciprocal of current gain (Δ(1/β)) caused by 40 MeV Si and 25 MeV C ions can be normalized in one line at lower displacement damage doses. As the displacement damage dose increases to a certain threshold, the Δ(1/β) deviates from the normalized line. Based on the DLTS analyses, the dominant displacement defects in the 3CK3637 PNP BJTs irradiated by 40 MeV Si and 25 MeV C ions change with increasing displacement dose, leading to the existence of threshold in the electrical degradation curve. [ABSTRACT FROM AUTHOR]