Search

In this paper, continuous SiC fiber-reinforced Ti60 (SiC f /Ti60) composites were fabricated by preparing SiC f /Ti60 precursor wires from matrix-coated fibers and hot isostatic pressing (HIP) consolidation. The microstructures of the precursor wires and composites were investigated using XRD, SEM, EPMA, EBSD, and TEM, which led to the microstructure evolution of the composites. The conclusions of this study are as follows. 1. A reaction layer (RL) with a thickness of approximately 0.1 μm already exists at the interface of the precursor wires during the preparation. The HIP process accelerates the diffusion of the carbon coating with the Ti60 matrix, resulting in an increase in the thickness of the RL to approximately 0.5 μm. This layer is primarily composed of fine-grained TiC layer || discontinuous silicides || coarse-grained TiC layer. 2. The matrix of SiC f /Ti60 precursor wires contains α-Ti (∼ 1.9 μm), S2 (∼ 50 nm), and β-Ti (∼ 50 nm), in the matrix, β-Ti is precipitated from α-Ti, and HIP makes α-Ti, S2, and β-Ti grow to ∼ 2.4 μm, ∼ 200 nm, and ∼ 300 nm, respectively. 3. There are 〈0001〉//axial direction (AD) and 〈10−10〉//AD fiber textures in the matrix of the precursor wires, and HIP makes the matrix undergo a plastic deformation dominated by dislocation slip, and the pole density of the two kinds of textures are both increased. • Detailed study of precursor wires to SiC f /Ti60 composites interface and matrix microstructure evolution during hot isostatic pressing. • Sample preparation and characterization using advanced techniques such as FIB, EBSD, TKD, and TEM, etc. • During hot isostatic pressing, the reaction layer is transformed from fine-grained TiC to fine-grained TiC layer || discontinuous silicides||coarse-grained TiC layer. • During hot isostatic pressing, β-Ti and S2 silicides are precipitated from the Ti60 matrix, and the pole density of α-Ti changes. [ABSTRACT FROM AUTHOR]

• The first-ever identification of twin structures within TiC in SiC f /Ti 2 AlNb composite interfaces. • The interfacial reaction products of the composites are TiC and α 2. • Interfacial elemental interdiffusion leading to the presence of Al atoms in the TiC layer. • Al atoms reduced the SFE of TiC, which is beneficial for the formation and stability of Σ3{1 1 1} twin boundaries. SiC f /Ti 2 AlNb composites were fabricated using the magnetron sputtering precursor wires method in conjunction with the hot isostatic pressing (HIP) technique. The morphology, elemental distribution, and structural characteristics of the interfacial reaction layer (RL) were examined through scanning electron microscopy (SEM), transmission electron microscopy (TEM), and wavelength dispersive spectroscopy (WDS). The results showed that the interface between SiC fibers and Ti 2 AlNb reacted to form TiC and α 2. Due to the interdiffusion of elements at the interface, a small amount of Al atoms existed in the TiC layer. These Al atoms reduced the stacking fault energy (SFE) of TiC, which is beneficial for the formation and stability of Σ3{1 1 1} twin boundaries. [ABSTRACT FROM AUTHOR]