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We investigated the device characteristics of GaN-based blue vertical light-emitting diodes (VLEDs) with two different package structures ( i.e. , lead frame with metal/plastic body (MPLF package) and lead frame with metal body (MLF package)) under various measurement conditions. In comparison with the MPLF packaged VLEDs, the MLF packaged VLEDs exhibited relatively lower junction temperature and thermal resistance values due to the better heat dissipation capability, leading to further improved optical, spectral, and thermal device characteristics. Thermal simulations of the VLEDs with two different packages were performed using three-dimensional steady-state device models to theoretically calculate their thermal and mechanical behaviours. The maximum temperatures, internal temperature distributions, and thermomechanical stresses were analysed by a finite element method. [ABSTRACT FROM AUTHOR]

The temperature-dependent device characteristics of InGaN/GaN near-ultraviolet light-emitting diodes, operating at λ ∼380 nm, with a chip size of 0.5 × 1 mm2 were reported. Their optical and spectral properties were measured and analyzed at different injection current levels and heatsink temperatures. The device performance showed the optical output power of 92.8 mW, forward voltage of 4.30 V, and emission peak wavelength of 380 nm at 350 mA and 298 K. The junction temperature ( Tj) was experimentally estimated via the forward voltage method, leading to a thermal resistance of ∼10.03 K W−1. For comparison with the simulated Tj, the three-dimensional steady-state heat transfer simulation based on the finite element method was also carried out. [ABSTRACT FROM AUTHOR]