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[Display omitted] • The reliability of DLTS simulation is confirmed by the nonlocal hybrid functional. • The electron–phonon coupling is included to describe the hot carrier nonradiative capture in the DLTS simulation. • The DLTS simulation is verified by the radiation experiments. Deep level transient spectroscopy (DLTS) is a crucial technique to characterize the defects in semiconductor devices. Within the framework of the state-of-the-art density functional theory (DFT), the simulation for experimental DLTS spectra is realized successfully with high accuracy and intrinsic physics in this work, of which the reliability is confirmed by nonlocal hybrid functional. The electron–phonon coupling is included to describe the thermal-activated behavior of the hot carrier nonradiative capture reflected by DLTS signal. In the case study, the divacancy in silicon is employed for the flow of DLTS calculation as a benchmark, of which the results are verified by our 40 MeV Si irradiation experiments on the NPN and PNP bipolar junction transistors and previous reports. The problem we can address is the identification of defect characterized in DLTS experiments. The realization of DLTS simulation would have a profound significance for understanding the underlying physics in experimental observations and be a powerful leverage to define defect nature in semiconductors. [ABSTRACT FROM AUTHOR]

Characteristics of displacement defects in the 3CK3637 PNP bipolar junction transistors (BJTs) irradiated by 10 MeV Si, 40 MeV Si and 25 MeV C ions are investigated in this paper. Electrical parameters are measured in-situ using KEITHLEY a 4200-SCS semiconductor characterization system during irradiations. The radiation-induced defects caused by various ions for different displacement damage doses are characterized by deep level transient spectroscopy (DLTS). Experimental results show that the electrical degradation increases with increasing irradiation fluence. It is worth noting that the increase trend of the electrical degradation is different for the three types of ions. For the 10 MeV Si ions, the electrical degradation linearly increases, while, for the 40 MeV Si and 25 MeV C ions, the electrical degradation increases nonlinearly. The change in the reciprocal of current gain (Δ(1/β)) caused by 40 MeV Si and 25 MeV C ions can be normalized in one line at lower displacement damage doses. As the displacement damage dose increases to a certain threshold, the Δ(1/β) deviates from the normalized line. Based on the DLTS analyses, the dominant displacement defects in the 3CK3637 PNP BJTs irradiated by 40 MeV Si and 25 MeV C ions change with increasing displacement dose, leading to the existence of threshold in the electrical degradation curve. [ABSTRACT FROM AUTHOR]