1. Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate.
- Author
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Yu, Yingtao, Chen, Si, Hu, Qitao, Solomon, Paul, and Zhang, Zhen
- Subjects
NOISE ,SILICON nanowires ,NANOELECTROMECHANICAL systems ,NANOWIRES ,FIELD-effect transistors ,LOGIC circuits - Abstract
Random trapping and detrapping of charged carriers in the vicinity of gate oxide/Si interface has for long been considered as the dominant noise source in Si nanowire (SiNW) FET-based biochemical sensors. Here we extend our previous work presenting a Schottky junction tri-gate SiNWFETs (SJGFET) fabricated on a bonded silicon-on-insulator (SOI) substrate, aiming for ultra-low device noise generation. The SJGFET exhibits near-ideal gate coupling efficiency with a subthreshold swing of ~66 mV/dec. Its gate-referred voltage noise, S
vg , are 1.2 × 10−10 and 1.1 × 10−11 V2 μm2 /Hz at 1 and 10 Hz, respectively. These Svg values are significantly lower than that of previously reported FET-based sensors. More importantly, Svg of the SJGFET are below the reported voltage noise generated by the oxide/electrolyte sensing interface. Using our SJGFET as the signal transducer can greatly relieve the concern of the adverse effect from the intrinsic device noise in biochemical sensing applications. [ABSTRACT FROM AUTHOR]- Published
- 2021
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