1. Mid-IR lasers epitaxially grown on on-axis (001) Silicon
- Author
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Michael Bahriz, Ariane Meguekam, Marta Rio Calvo, Eric Tournié, Daniel A. Diaz-Thomas, Laura Monge-Bartolome, Zeineb Loghmari, Jean-Baptiste Rodriguez, Guilhem Boissier, Roland Teissier, Laurent Cerutti, Alexei N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS]Physics [physics] ,Silicon photonics ,Materials science ,Silicon ,business.industry ,chemistry.chemical_element ,Laser ,Epitaxy ,law.invention ,Wavelength ,[SPI]Engineering Sciences [physics] ,chemistry ,law ,Etching (microfabrication) ,Optoelectronics ,Wafer ,business ,ComputingMilieux_MISCELLANEOUS ,Diode - Abstract
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.
- Published
- 2021