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The measurement of distance plays an integral part in many aspects of modern societies. In this paper an integrated mode-locked laser on a chip is used for distance measurement based on mode-resolved interferometry. The emission from the on-chip source with a repetition rate of 2.5 GHz and a spectral bandwidth of 3 nm is coupled into a Michelson interferometer. The interferometer output is recorded as a spectral interferogram, which is captured in a single camera image. The images are analyzed using Hilbert transform to extract the distance. The distance derived shows a deviation of 6 \mum from the reference, for a distance up to 25 mm. We also demonstrate interferometry with repetition frequency sweep which can also be used with the source. Performance is expected to be better in the near future with the rapid developments in the field of on-chip laser sources which are demonstrating larger spectral widths and coherence lengths.

An array of monolithic wide-tunable lasers is integrated using selective area growth to shift the bandgap of their gain section. A gap-free tuning is demonstrated from the combination of the tuning ranges of the lasers, and single-mode operation is verified.

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

We present our work on the realization of integrated III/V-on-silicon integrated mode-locked lasers. We demonstrate 1 GHz repetition rate mode-locked lasers with a spectrum spanning more than a 1 THz.

We report a novel type of monolithically integrated tunable semiconductor laser. The tuning is achieved by three intracavity Mach–Zehnder interferometers, realized in passive waveguides and using voltage-controlled electro-optic phase modulators requiring only four control voltages. The potential of the design is demonstrated by a realized laser system that shows an optical linewidth of 363 kHz, output power of 3 mW, and a record tuning range of 74.3 nm. Such a continuous wavelength span is in excess of any monolithic semiconductor laser reported up to date. Precision of the tuning mechanism is demonstrated by a scan over a 0.89-GHz-wide absorption line of acetylene. The laser design is suitable for a number of applications, including gas spectroscopy, telecommunication, and optical coherence tomography. The laser has been fabricated in a multi-project wafer run on an indium phosphide-based generic photonic foundry platform and demonstrates the potential of these technology platforms.

Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.

Optical frequency combs emerge as a promising technology that enables highly sensitive, near-real-time spectroscopy with a high resolution. The currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense comb generation (line spacing in the range of 100 MHz to 1 GHz). However, their integrated and low-cost counterparts, which are integrated semiconductor mode-locked lasers, are limited by their large comb spacing, small number of lines and broad optical linewidth. In this study, we report a demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization. The use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate. The 12-nm 10-dB output optical spectrum and the notably small optical mode spacing results in a dense optical comb that consists of over 1400 equally spaced optical lines. The sub-kHz 10-dB radio frequency linewidth and the narrow longitudinal mode linewidth (

In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

Optical sensing offers unrivalled precision with real-time monitoring, but the complexity in implementing the optical sources has so far limited deployments to high value measurement systems. Innovations in photonic integration are beginning to enable breakthroughs in terms of cost, size and performance. Integrated sources and readouts can be created with large-scale semiconductor wafer production techniques. InP integrated photonics is able to combine best-in-class components including the lasers and amplifiers within one photonic chip. The chip-scale integration of complete circuits enables on-chip stabilisation and environmental corrections for further advances in measurement precision and at lower power consumption.

Progress on the development of a long wavelength (∼2 µm) generic monolithic photonic integration technology on indium phosphide substrate and a novel concept of a tunable laser realized as a photonic integrated circuit using such technology are presented. Insights into the development of active and passive waveguide structures which are used to define a limited set of on-chip functionalities in the form of building blocks will be given. A novel tunable laser was proposed and designed using such predefined set of basic building blocks. The laser geometry features an intra-cavity wavelength tuning mechanism based on asymmetric Mach-Zehnder interferometers in a nested configuration. The photonic integrated circuit chip was fabricated within the first long wavelength multi-project wafer run. The experimental evaluations of the fabricated device show a record tuning range of 31 nm around 2027 nm and successful measurements of a 0.86 GHz wide absorption line of carbon dioxide. These results provide a demonstration of a fully functional photonic integrated circuit operating at wavelengths that are much longer than those in the typical telecommunication windows as well as the use of indium phosphide based generic photonic integration technologies for gas sensing applications.

The performance of integrated planar waveguide mode locked lasers can be enhanced using the available photonic integration platform technology in indium-phosphide. Extended cavity mode locked oscillators including DBR mirrors and phase modulators can be realized at telecom wavelengths to improve performance and control over the device. Integrated pulse shapers and special amplifiers can be used to improve the output properties further.

Monolithic integration of four widely tunable extended cavity lasers suitable for gas detection is presented. Each laser features a precise, grid-less tuning mechanism with a low-linewidth, single-mode output over a wide wavelength range of 74nm.

The authors present the design and characterization of a novel integrated two-section discrete mode index patterned diode laser source. The two slotted regions etched into the laser ridge waveguide are formed in the same fabrication step as the ridge, thus avoiding the requirement for complex lithography and regrowth steps. The laser is encased in a temperature-controlled butterfly package, which simplifies the static and dynamic measurements. Initial static characterization of this two-section laser shows that the injection, from the master laser to the slave laser, enhances the slave's emission side-mode suppression ratio from 30 dB to over 50 dB and its relative intensity noise is reduced from about -129.3 dB/Hz to -142.6 dB/Hz. Subsequent dynamic characterization then shows that the modulation bandwidth of the laser can be improved via injection to about three times the inherent free-running bandwidth. Hence, optical injection from master section into slave section enables the improvement of various parameters, which makes this two-section device attractive as a transmitter in optical communication systems.

The authors demonstrate the generation of a highly coherent multicarrier signal that consists of eight clearly resolved 10.7-GHz coherent sidebands generated within 3 dB of the spectral envelope peak and with an extinction ratio in excess of 45 dB by gain switching a discrete mode (DM) laser. The generated spectral comb displays a corresponding picosecond pulse train at a repetition rate of 10.7 GHz with a pulse duration of 24 ps and a temporal jitter of ~450 fs. The optical spectra and associated pulses of the gain-switched DM laser are subsequently compared with a gain-switched distributed feedback (DFB) laser that generates a spectrum with no discernible sidebands and corresponding pulses with ~3 ps of temporal jitter. By means of external injection, the temporal jitter of the gain-switched DFB laser is then reduced to

This paper presents experimental investigations of the all-optical synchronization of a distributed Bragg reflector (DBR) laser self-pulsating at 40 GHz on various injected bit-rate signals. Even though there is no modulation applied to this laser, it exhibits a modulation of its output emission, measured at 39.7 GHz with a linewidth of 30 MHz. Such performance is exploited in all-optical clock recovery for a return-to-zero data stream at 40 Gbit/s. The SP-DBR laser wavelength and the injected signal wavelength are 10 nm apart. All-optical synchronization is demonstrated at 40 Gbit/s with a linewidth of less than 20 MHz for injected signals at 10 and 20 Gbit/s, respectively. Thus the SP-DBR laser proves to be very versatile and can be synchronized on various bit-rate data signals.

For the first time we demonstrate an anti-colliding mode-locked laser implemented on a III-V-on-silicon platform. In passive mode-locked operation a 1.7kHz 3dB linewidth of the fundamental RF tone at 4.83GHz is obtained.

A tunable laser for single line gas spectroscopy is realized as a monolithic photonic integrated circuit in an InP based generic foundry platform. The laser operates at wavelengths around 2.0 μm and has a tuning range of 22 nm.

In this paper we present our recent progress on 2.5 GHz mode-locked, quantum well lasers operating at 1550 nm. Two such lasers are monolithically integrated on an InP substrate. Stable passive and hybrid mode-locking of both lasers operating at the same time with a small repetition rate difference is demonstrated.

Wavelength tunability of an all-optical clock recovery operation based on a quantum-dash mode-locked Fabry-Perot laser diode is experimentally investigated. Synchronization of the device to the injection of 40-Gb/s nonreturn-to-zero (NRZ) incoming data is assessed by analyzing both the carrier-to-noise ratio and the linewidth of the 40-GHz beat-tones measured at the mode-locked laser output. Under optical injection, beat-tone linewidths below 10 Hz are measured. Recovered clock pulses featuring a width of 1.6 ps are obtained irrespective of the wavelength detuning between the laser spectra and the optical carrier of the incoming data stream.

We propose a simple potentially integrable configuration for expanding a wavelength tunable comb by cascading gain switched Fabry-Pe´rot lasers. A 10GHz spaced comb, exhibiting 13 coherent low-linewidth tones within a 3 dB window, and tunable over 20 nm is demonstrated.

Using monolithic integration technology we have designed and fabricated tunable lasers in the 1.5 µm region with a demonstrated tuning range of 60 nm and single mode operation. This performance is achieved using intracavity tunable Mach-Zehnder interferometers that use voltage controlled phase modulators. In this paper we will discuss design considerations and advantages of such tunable lasers.

A ring mode-locked laser fabricated as a monolithic photonic integrated circuit using a InP based integration technology is presented. It generates an optical coherent comb around 1542 nm with a record 11.5 nm 3 dB bandwidth.

A tunable laser operating from 2015 – 2040 nm realized as a monolithic InP photonic integrated circuit is presented. The laser uses an intracavity tuning mechanism based on parallel asymmetric Mach-Zehnder interferometers with electro-refractive modulators. The device is intended for a single line gas spectroscopy and was designed and fabricated using a generic integration technology platform.

Discrete Mode Laser Diodes (DMLDs) present an economic approach with a focus on high volume manufacturability of single mode lasers using a single step fabrication process. We report on a DMLD designed for operation in the 1550 nm window with high Side Mode Suppression Ratio (SMSR) over a wide temperature tuning range of -20 °C < T < 95 °C. Direct modulation rates as high as 10 Gbit/s are demonstrated at both 1550 nm and 1310 nm. Transmission experiments were also carried out over single mode fibre at both wavelengths. Using dispersion pre-compensation transmission from 0 to 60 km is demonstrated at 1550 nm with a maximum power penalty measured at 60 km of 3.6 dB.

Linewidth narrowing of the radio frequency beat-tones and the optical-modes is experimentally investigated in a ∼40 GHz quantum-dash mode-locked laser diode subject to optical injection of 10 GHz pulses. In comparison to the 75 kHz linewidth exhibited by the beat-tones in passive mode-locking conditions, a remarkable reduction to less than 8 Hz is achieved when the laser is under optical injection. From this beat-tone signal, an integrated root-mean-square timing jitter of 64 fs is calculated. In addition, a quadratic profile of the optical linewidth with the wavelength is observed in active locking, reaching a minimum of 1.7 MHz for the longitudinal modes around 1530 nm and progressively increasing to 37.4 MHz for modes at 1525 nm.

Beat-tones at 40-GHz from a QDash-ML laser under 10 to 160 Gb/s optical injection are analyzed. A FWHM linewidth less than 8 Hz is obtained regardless of the rate of injected data stream.

Synchronization of a 40 GHz quantum-dash mode-locked Fabry-Perot laser diode with optically injected pulse streams is experimentally studied by analyzing the linewidth of the associated 40 GHz beat-tones. Injected signals consist of trains of 1.6 ps pulses at various repetition rates, spanning from 10 to 160 Gb/s of encoded or not with pseudo-random on-off key data sequence. Data injections at the fundamental bit-rate (40 Gb/s), harmonic at 80 and 160 Gb/s and sub-harmonic at 10 and 20 Gb/s are used to synchronize the mode-locked laser. The response is a stable 40 GHz clock pulse train featuring a width of 1.8 ps. Moreover, the 40 GHz beat-tones associated to the recovered clock pulses exhibit a full-width at half maximum smaller than 8 Hz regardless of the injected data rate. It is observed that frequency components at 10 and 20 GHz do not create any amplitude modulation on the recovered 40 GHz clock pulses by the injection of data signals at 10 and 20 Gb/s. Similarly, synchronization of the quantum-dash laser with pulse streams at 80 and 160 Gb/s is sustained in spite of negligible components at and below 40 GHz are injected in these two data rates.

Synchronization of a 40 GHz quantum-dash mode-locked (ML) Fabry-Perot laser diode with optically injected pulse streams is experimentally studied. Injected signals consist of nonmodulated and modulated trains of 1.6 ps pulses at various repetition rates, ranging from 10 to 160 GHz and 10 to 160 Gbps, respectively. Subharmonic, fundamental, and harmonic synchronization of the ML laser allows retrieval of stable 40 GHz clock pulses featuring a width of 1.8 ps. Frequency components at 10 and 20 GHz do not create any amplitude modulation on the recovered 40 GHz clock pulses when injecting signals at 10 and 20 GHz/Gbps. In addition, external synchronization of the laser with pulse streams at 80 and 160 GHz/Gbps is sustained despite the absence of significant components at or below 40 GHz.

Performance improvement of a directly modulated 10 Gb/s OFDM system by optical injection of monolithically integrated lasers is shown experimentally over differing fibre lengths. The modulation and optical injection is performed using monolithically integrated Discrete Mode lasers. It is shown that optical injection with this device reduces third order inter-modulation distortion by up to 10dB and this results in an improvement in system performance from above a forward error correction BER threshold of 1 × 10(-3) to significantly below it.

Quantum-dash modelocked laser diodes (QD-MLLD) are capable of producing short optical pulses at extremely high repetition rates. As such they are ideally suited to many telecommunications applications [1]. In this paper we present a linear self-referenced measurement of the spectral amplitude and phase of a free-running quantum-dash modelocked laser diode. The technique is suitable for measuring optical signals with repetition rates up to 100 GHz. In contrast to many other linear techniques it requires no external electronic clock synchronized to the signal under test. Using this method we show that compensating for the intra-cavity dispersion of the diode results in 500 fs pulses at a repetition rate of 39.8 GHz. The measurement technique is based on the stepped-heterodyne method presented in Ref. [2]. The signal under test is mixed with a CW narrowband optical local oscillator (LO) and the combined signal detected by a high-speed photodiode, mixed with an electronic LO, and then recorded on a real-time oscilloscope. When the optical LO is placed between two adjacent signal modes the resultant beat signals can be analysed to determine not only the power of each of the signal modes, but also the phase difference between them [2]. Stepping the optical LO across all signal modes allows for a complete measurement of the spectral amplitude and phase of the signal.

An all-optical approach based on nonlinear interactions inside a semiconductor optical amplifier for measuring the THz beat-tone of a passively mode-locked laser is proposed. This novel approach can be applied to beat-tones in the range from GHz to few THz.

Experimental measurements on a quantum dash mode-locked Fabry-Perot laser are presented. Its potential for clock recovery at 40 Gb/s in an all-optical 3R regeneration with an NRZ-to-RZ format conversion and wavelength offset of 23 nm is demonstrated.

A narrowband terahertz signal generated by a uni-travelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry-Perot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. All components involved in this experiment operate at room temperature. The terahertz signal at a frequency of 372 GHz is recorded, and the linewidth is 17 MHz. The linewidth and the tunability of the emitted terahertz wave are analyzed, as a function of the laser bias.

An experimental analysis of the timing jitter associated with sub-picosecond pulses produced from a quantum dash passively mode-locked Fabry-Perot laser is produced. Moreover, application as an all-optical clock recovery function for a 40Gb/s data rates with non-return-to-zero (NRZ) modulation format is demonstrated using this laser.

Timing-jitter measurements in optically generated subpicosecond pulses by a quantum-dash passively mode-locked semiconductor laser as a function of the bias current are reported. All the measurements are retrieved from a second-harmonic-generation frequency-resolved optical gating system. A decreasing trend in the pulse width and the associated timing jitter is found with the bias current. Additionally, the optical and mode-beating linewidths are analyzed in terms of both the mode wavelength and the bias current. From our results, we can conclude that once the optical modes are phase locked, the optical linewidth associated to every individual longitudinal mode of the device under test does not have a significant impact on the mode-beating signal on neither the pulse width nor its respective timing jitter.

Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A comparison of the optical time-fluctuations measured at their output stresses the importance of a resonant cavity in THz-signals generation from semiconductor optical devices.

International audience; A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry–Pérot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. A terahertz signal at a frequency of 372 GHz, featuring a linewidth of 17 MHz is recorded by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature. The linewidth and the frequency of the emitted terahertz wave are analyzed, along with their dependency on dc-bias conditions applied to laser diode.

An experimental analysis on the quality of 40-GHz radio-frequency signals generated by various passively mode-locked semiconductor lasers is addressed. The analysis is performed considering the frequency linewidth of 40-GHz optically generated signals and the number of longitudinal modes selected by the cavity of each laser under study. Four of these devices are multi-quantum wells InAlGaAs Fabry–Perot lasers. They have been engineered to exhibit a specific number of longitudinal modes: 4, 5, 10, and 22 modes, respectively. Another device under test is a bulk distributed Bragg reflector laser exhibiting 3 lasing modes. The last device under study is a quantum-dash Fabry–Perot laser characterized by 40 lasing modes. From our experimental results it appears that, regardless the nature of the device cavity and active media, the strength of the passively mode-locked mechanism might be enhanced with the number of longitudinal modes oscillating into the laser cavity, allowing a reduction in the frequency linewidth.

Generation of sub-picosecond pulses by a dc-biased passively mode-locked Fabry-Perot laser is demonstrated. By using a tunable band-pass filter, it is observed that the width of the generated pulses decreases in direct proportion to the optical modes emitted by the laser. Furthermore, performing a passive compression by a piece of single mode fiber, we demonstrate the generation of 720 fs pulses by this type of mode-locked Fabry-Perot laser.

A technique to measure a terahertz wave generated by spectrum tailored Fabry–Pérot lasers (FP) is assessed. A dc-biased and 25 °C temperature controlled FP is probed by a continuous wave signal, tuned at 20 nm away from its lasing modes. With a 0.02 nm resolution optical spectrum analyzer (OSA), the terahertz generated signal frequency is measured from the interval between the probe and its side-band modulations. The terahertz waves emitted by these FPs are measured at 370±5 GHz and at 1.157±0.005 THz, respectively, within a precision set by our OSA. The origin of the terahertz wave is due to passive mode-locked through intracavity four-wave-mixing processes.

Generation of narrow microwave signals produced from the mode beating of a DBR laser is presented. The application of this process to the cw-THz wave generation is also demonstrated using a slotted FP laser.

We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a Fabry–Pérot based device with shallow grooves implemented on its p-side to engineer the longitudinal mode spectrum. The laser is dc-biased and temperature controlled at 298 K. The main two modes are separated by 3 nm at 1550 nm with a side-mode-suppression ratio of 25 dB. Using a frequency resolved optical gating, evidence of mode beating at 373 GHz is observed. With a bolometer interfaced to a Fourier transform interferometer, the second harmonic signal is measured at 690 GHz.

In this paper, Cassidy's method is presented and is applied to measure the linewidth enhancement factor (LEF) of a 370 GHz self-pulsating Fabry-Perot laser. The importance of the LEF is addressed, the method is detailed, and the device under test is presented. It exhibits a self-modulation at 370 GHz even though it is DC biased. The measured LEFs vary according to the wavelength, values of 4 have been measured at threshold current, which is typical in the case of multi-quantum well lasers. In this paper we propose to present measurement of the linewidth enhancement factor (LEF) in semiconductor laser based, 370 GHz source generator. First we explain the origin of LEF in semiconductor material, then we present several techniques to measure it. We present a computational simulation using modelled ASE spectra, and in part 4, we detail our device and experimental set-up and provide some results. The linewidth enhancement factor (LEF) or alpha parameter is a distinguishing feature of semiconductor devices. Semiconductor devices generally have a larger linewidth than other solid state lasers. This broadened linewidth leads to effects such as mode instability, filementation in broad area devices and frequency chirping under modulation. This last effect is of particular interest, especially in the field of optical communications. It can be suppressed if the LEF is reduced. Therefore in the design of semiconductor lasers or semiconductor amplifiers (SOA), a number of factors have to be taken into consideration, but one of the most important of these is the linewidth enhancement factor. For instance, when the gain of an SOA is affected by the injection of a pulsed source, refractive index changes caused by changes in carrier density will lead to an instantaneous variation of the frequency. This effect is exacerbated as the gain is saturated.

In this paper we present some characterizations of passively mode-locked semiconductor lasers. These lasers are multimode and they exhibit a modulation of their output power even though they are DC-biased. The modulation frequency corresponds to their free-spectral range. We demonstrate their potential: for generation of ultra-fast modulation for THz wave generation at room temperature without any direct modulations applied, in the radio frequency range they synchronise their modulation to the bit-rate of an incoming signal used for clock extraction. Therefore these devices can be used for all-optical clock recovery.

Characterizations of passively mode-locked semiconductor lasers will be presented in following paper. These lasers are able to operate in multimode regime and to exhibit a modulation of output power even though they are DC-biased. A frequency of the modulation corresponds to their free-spectral range associated with optical longitudinal modes. Some potential applications for devices of that type will be disclosed: in THz frequency range for terahertz wave generation at room temperature without any direct modulations applied, in the radio frequency range ability to synchronise their modulation to the bit-rate of an incoming signal makes them suitable for all-optical clock extraction.

Multimode semiconductor lasers under certain DC bias conditions generate electromagnetic waves from the beating between the longitudinal lasing modes. The frequency of those waves is directly related to the free spectral range of the involved modes. Our recent experimental work is carried out on slotted Fabry-Perot lasers with mode separation of 330 GHz. The devices are at room temperature biased at 3 times the threshold current. Using a bolometer coupled to an FT-IR interferometer we are able to observe radiation at 660 GHz, in the terahertz range.

Although self pulsating (SP) lasers are DC biased, they feature a modulation of the output power. For the results presented in this paper, the SP frequency corresponds to the frequency spacing between longitudinal modes or its second harmonic. The performances of both a 40 GHz self pulsating distributed Bragg reflector laser and of a 660 GHz slotted laser are presented. For the first laser, the radio frequency (RF) signal was analysed on electrical spectrum analyser and its linewidth was smaller that the sum of the main optical modes, proving a passive modelocking of the mode phases. For the slotted laser, a bolometer interfaced to a FT IR spectrometer is used for the terahertz (THz) detection. A signal 10 times larger than the noise level was measured with this set up. Both lasers have demonstrated to be an easy solution to produce RF or THz signal generator.

A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP-based active-passive integration technology. The 33 mm long cavity contains gain, saturable absorption, and passive waveguide sections as well as phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive and hybrid mode-locked operation, along with the wavelength tuning of the laser modes, are experimentally demonstrated. In the passive mode-locking regime, a beat signal at the fundamental round trip frequency with a 3 dB bandwidth of 6.1 kHz is produced on a fast photo diode.

Mode-locked fiber and solid state lasers have played an essential role in several scientific and technological developments. The integration of mode-locked lasers on chips could enable their use in a wide range of applications. The advancement of semiconductor mode-locked laser diodes has been going on for several decades, but has recently seen the development of novel devices based on generic InP and III-V-on-silicon photonic integration platforms. These photonic integration platforms enable the use of standardized components and low-loss waveguides within the laser cavity, allowing for the design of advanced extended cavities. In this manuscript we give a review of these novel devices and compare their performance.