Search

For photo-dissociation of a single hydrogen molecule ( H 2 ) with combined XUV and IR laser pulses, we demonstrate optical control of the emission direction of the photoelectron with respect to the outgoing neutral fragment (the H-atom). Depending on the relative delay between the two laser fields, adjustable with sub-femtosecond time resolution, the photoelectron is emitted into the same hemisphere as the H-atom or opposite. This emission asymmetry is a result of entanglement of the two-electron final-state involving the spatially separated bound and emitted electron. [ABSTRACT FROM AUTHOR]

We demonstrate the control of near-field localization within individual silver nanocubes through photoemission electron microscopy combined with broadband, few-cycle laser pulses. We find that the near-field is concentrated at the corners of the cubes, and that it can be efficiently localized to different individual corners depending on the polarization of the incoming light. The experimental results are confirmed by finite-difference time-domain simulations, which also provide an intuitive picture of polarization dependent near-field localization in nanocubes. [ABSTRACT FROM AUTHOR]

We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers. [ABSTRACT FROM AUTHOR]