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We demonstrate a high-peak-power and narrow pulse mid-infrared (MIR) laser with xenon-lamp pumping and La3Ga5SiO14 (LGS) Q-switching on the Cr,Er:YAP crystal grown by Czochralski method. X-ray powder diffraction and x-ray rocking curves suggest the crystal has high crystalline quality. Segregation coefficients of the Cr3 + and Er3 + in the as-grown Cr,Er:YAP crystal are 4.96 and 1.07, respectively. The absorption and fluorescence spectra indicate that the Cr,Er:YAP crystal is a promising material for MIR laser by xenon-lamp pumping. The fluorescence lifetimes of the upper (I11/24) and lower (I13/24) laser levels are 0.86 and 3.57 ms, respectively. A maximum energy of 632 mJ is acquired at 5 Hz by xenon lamp pumping. By the LGS electro-optic Q-switching technology, single pulse energy of 148.6 mJ is achieved at 5 Hz with a pulse width of 35.4 ns and peak power of 4.2 MW. The results show that the LGS Q-switched Cr,Er:YAP crystal pumped by xenon lamp possesses potential application as a short-pulse and high-energy laser device. [ABSTRACT FROM AUTHOR]

A novel Yb,Ho,Pr:LuYAG laser crystal was successfully grown and investigated in detail, which belongs to the cubic system with a space group of I a-3d. The X-ray rocking curve of the as-grown crystal implied high crystalline quality. The dislocation defects were revealed by the chemical method. Moreover, the density, thermal expansion coefficient and thermal conductivity were determined. The absorption coefficient at 935 nm and the emission cross-section at 2.911 μm were obtained to be about 15.18 cm−1 and 2.23 × 10−21 cm2, respectively. The lifetime of the lower laser level 5I 7 was shown to decrease from 7.58 to 5.88 ms, while that of the upper laser level 5I 6 basically remained unchanged, suggesting that the co-doped Pr3+ possessed an efficient deactivation effect and was beneficial in attaining population inversions of Ho3+. The corresponding findings illustrate that the Yb,Ho,Pr:LuYAG crystal can serve as a novel promising gain medium for realizing the 2.911 μm laser pumped by ~ 940 nm high-power InGaAs laser diode. • A novel Yb,Ho,Pr:LuYAG laser crystal was successfully grown by Czochralski method. • The crystal possesses a high thermal conductivity, which is helpful in dissipating heat during laser action. • Yb3+ makes the crystal suitable for 935 nm LD pumping and Pr3+ can inhibit self-termination phenomenon. • High absorption coefficient at 935 nm and large emission cross-section at 2911 nm are beneficial in realizing ∼2.9 μm laser. • The Yb,Ho,Pr:LuYAG crystal is a new promising gain medium for realizing 2.911 μm laser. [ABSTRACT FROM AUTHOR]