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Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates. [ABSTRACT FROM AUTHOR]

The first low-threshold 1.55 µm lasers grown on GaAs are reported. Lasing at 1.55 µm was observed from a 20×2400 µm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power. [ABSTRACT FROM AUTHOR]

GaAs-based singlemode emission at 1.5 µm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm. [ABSTRACT FROM AUTHOR]

Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 μm) GaAs-based lasers are reported. A 20 × 1220 μm as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm², external efficiency of 53%, and 200 mW peak output power at 1.5 μm. The pulsed threshold current density was 450 A/cm² with 1145 mW peak output power. [ABSTRACT FROM AUTHOR]