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Optical microcomb underpins a wide range of applications from communication, metrology, to sensing. Although extensively explored in recent years, challenges remain in key aspects of microcomb such as complex soliton initialization, low power efficiency, and limited comb reconfigurability. Here we present an on-chip microcomb laser to address these key challenges. Realized with integration between III and V gain chip and a thin-film lithium niobate (TFLN) photonic integrated circuit (PIC), the laser directly emits mode-locked microcomb on demand with robust turnkey operation inherently built in, with individual comb linewidth down to 600 Hz, whole-comb frequency tuning rate exceeding 2.4 × 1017 Hz/s, and 100% utilization of optical power fully contributing to comb generation. The demonstrated approach unifies architecture and operation simplicity, electro-optic reconfigurability, high-speed tunability, and multifunctional capability enabled by TFLN PIC, opening up a great avenue towards on-demand generation of mode-locked microcomb that is of great potential for broad applications. Here the authors demonstrate a laser system that can directly output soliton microcombs, with high power efficiency and reconfigurability, paving the way for communication, computing, and metrology based on integrated photonics. [ABSTRACT FROM AUTHOR]

High‐coherence visible and near‐visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench‐top lasers are an impediment to their transition beyond the laboratory. Here, a system‐on‐chip that emits high‐coherence near‐visible lightwaves is demonstrated. The devices rely upon a new approach wherein wavelength conversion and coherence increase by self‐injection locking are combined within a single nonlinear resonator. This simplified approach is demonstrated in a hybridly‐integrated device and provides a short‐term linewidth of around 4.7 kHz (10 kHz before filtering). On‐chip converted optical power over 2 mW is also obtained. Moreover, measurements show that heterogeneous integration can result in a conversion efficiency higher than 25% with an output power over 11 mW. Because the approach uses mature III–V pump lasers in combination with thin‐film lithium niobate, it can be scaled for low‐cost manufacturing of high‐coherence visible emitters. Also, the coherence generation process can be transferred to other frequency conversion processes, including optical parametric oscillation, sum/difference frequency generation, and third‐harmonic generation. [ABSTRACT FROM AUTHOR]

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 1018 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR. On-Chip integration of laser systems led to impressive development in many field of application like LIDAR or AR/VR to cite a few. Here the authors harness Pockels effect in an integrated semiconductor platform achieving fast on-chip configurability of a narrow linewidth laser. [ABSTRACT FROM AUTHOR]