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A saturable absorber based on a novel two‐dimensional (2D) material Bi2O2Se was placed in a resonator with an overall longest diameter of 31 mm to achieve efficient operation of a passively Q‐switched (PQS) Tm:YAP laser for the first time. In PQS mode, a 1.62‐W average output power with a pulse width of 1.24 µs and a pulse repetition of frequency of 112.1 kHz was achieved at the pump power of 22.2 W, corresponding to a peak power of 11.66 W. As a novel 2D material, the results show the potential of Bi2O2Se as a photomodulator in the 2 µm spectral range. [ABSTRACT FROM AUTHOR]

In this paper, a passively Q-switched Tm:YAP laser with a SnS 2 saturable absorber (SA) fabricated by the liquid-phase exfoliation method was demonstrated for the first time. The optical characteristics of SnS 2 SA were characterized. The continuous-wave Tm:YAP laser was investigated first. An incident pump power of 7.92 W was used to generate a continuous-wave laser with a maximum average output power of 920 mW and a slope efficiency of 20.1%. By inserting SnS 2 SA into the resonant cavity, a Q-switched pulsed laser operated at 2 µm with the shortest pulse width of 1.073 μs, the maximum repetition frequency of 58.79 kHz, the highest peak power of 8.15 W, and the maximum average output power of 514 mW was obtained. The corresponding slope efficiency was 14.7%. Apart from these, the beam profiles and the quality factor M2 were measured. [ABSTRACT FROM AUTHOR]

Presented here was the spectrum and laser performance of a Tm:YAP (YAlO 3) laser crystal under 1 MeV electron irradiation. It was demonstrated that, under the radiation of S 3E15 , the absorption spectrum was enhanced of about 1.2 times at the absorption peak at 688 nm, and the absorption peak at 794 nm was enhanced of about 1.16 times, the laser threshold increased from 2.7 W to 2.93 W, the maximum output power reduced from 2.89 W to 2.585 W an d the slope efficiency decreased of nearly 3% at pump power of 13.325 W, the center wavelength drifted from 1991.68 nm to 1992.76 nm, the wavelength FWHM increased by about 0.7 nm. [ABSTRACT FROM AUTHOR]