1. Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops.
- Author
-
Li, Xueqing, George, Sumitha, Liang, Yuhua, Ma, Kaisheng, Ni, Kai, Aziz, Ahmedullah, Gupta, Sumeet Kumar, Sampson, John, Chang, Meng-Fan, Liu, Yongpan, Yang, Huazhong, Datta, Suman, and Narayanan, Vijaykrishnan
- Subjects
- *
FIELD-effect transistors , *NONVOLATILE memory , *FERROELECTRICITY , *FLIP-flop circuits , *HAFNIUM oxide - Abstract
This brief exploits the fusion of low-power logic and nonvolatile memory inside the emerging ferroelectric FETs (FeFETs) and proposes a new nonvolatile D flip-flop (nvDFF) through the device-circuit co-design. Compared with existing FeFET-based nvDFFs with on-demand control of backup and restore (B&R), the area overhead is lowered by half, and the routing cost is reduced with embedded backup control into the supply voltage. Circuit simulations show below 5% energy-delay overhead in the normal mode and femtojoule B&R energy. This new nvDFF promises area- and energy-efficient nonvolatile computing for power-gating and energy-harvesting applications. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF