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We demonstrated the sensing properties and adsorption mechanism of NO2 molecules of monolayer graphene and multilayer graphene encapsulated ZnO QDs for NO2 gas adsorption. The gas response value of ZnO-multilayer graphene (ZMLG) QDs was approximately 23 % and 7.2 and 25.5 times higher than that with ZnO-monolayer graphene (ZG) and ZnO QDs, respectively. The surface potential change of ZMLG QDs increased up to 14.25 times compared to ZnO QDs and 6.33 times increased compared to ZG QDs. We proposed an accurate adsorption mechanism for the improvement of the detection behavior that is occured by covering the graphene shells into ZnO QDs by the Brunauer–Emmett–Teller (BET), X-ray photoelectron spectroscopy (XPS), and SKPM measurement. These results are expected to increase the accuracy of gas sensor characteristic analysis.

We demonstrated the thermally robust reduced graphene oxide (rGO)/boron nitride nanotube (BNNT) papers and their application in electromagnetic interference shielding. In order to overcome the thermal durability shortcomings of electromagnetic wave shielding paper based on rGO nanomaterial, rGO/BNNT electromagnetic interference (EMI) shielding paper having excellent thermal durability could be manufactured using BNNT nanomaterials having excellent chemical and thermal stability at high temperature. With the addition of a little BNNT, the durability against temperature can be increased by more than two times while there is little reduction in EMI performance.

Group III-nitride light-emitting diodes (LEDs) fabricated on sapphire substrates typically suffer from insufficient heat dissipation, largely due to the low thermal conductivities (TCs) of their epitaxial layers and substrates. In the current work, we significantly improved the heat-dissipation characteristics of an InGaN/GaN quantum-well (QW) green LED by using hexagonal boron nitride (hBN) as a heat-transfer medium. Multiple-layer hBN with an average thickness of 11 nm was attached to the back of an InGaN/GaN-QW LED (hBN-LED). As a reference, an LED without the hBN (Ref-LED) was also prepared. After injecting current, heat-transfer characteristics inside each LED were analyzed by measuring temperature distribution throughout the LED as a function of time. For both LED chips, the maximum temperature was measured on the edge n-type electrode brightly shining fabricated on an n-type GaN cladding layer and the minimum temperature was measured at the relatively dark-contrast top surface between the p-type electrodes. The hBN-LED took 6 s to reach its maximum temperature (136.1 °C), whereas the Ref-LED took considerably longer, specifically 11 s. After being switched off, the hBN-LED took 35 s to cool down to 37.5 °C and the Ref-LED took much longer, specifically 265 s. These results confirmed the considerable contribution of the attached hBN to the transfer and dissipation of heat in the LED. The spatial heat-transfer and distribution characteristics along the vertical direction of each LED were theoretically analyzed by carrying out simulations based on the TCs, thicknesses, and thermal resistances of the materials used in the chips. The results of these simulations agreed well with the experimental results.

Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer-scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature ( Tg) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV·dec-1 for the Tafel slope and 0.12 kΩ of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.

We report a facile method for fabricating a flexible plane heater on a plastic substrate using a graphite and carbon nanotube hybrid nanocomposite. To scale up to an industrial level, all the processes are applied in a conventional manner including three-roll calendar and screen printing. Bare graphite flakes are used as a main filler to increase the electrical conductivity of the nanocomposite. To preserve the high crystallinity of graphite, chemical treatments are excluded during the process. A small amount of amino-functionalized multi-walled carbon nanotubes (a-MWCNTs) (10 wt%) are added not only to increase the mechanical strength of the plane heater, but also to improve the heat conduction in the nanocomposite. Therefore, while graphite nanocomposite film mostly peeled off after an adhesion test, a-MWCNT-graphite nanocomposite film adhered on the PET substrate without noticeable change. Furthermore, the fabricated plane heater shows the high performance, compared to that of a graphite nanocomposite, a carbon black/graphite nanocomposite, and Cu wire heaters. We demonstrate that our plane heater is applicable for heating seats of commercial vehicles as well as a flexible plane heater. It will be applied to numerous areas such as heating systems in electrical vehicle and household items for heating.

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ~24,000 cm[superscript 2] V[superscript −1] s[superscript −1] at room temperature, higher than that (~13,000 [superscript 2] V[superscript −1] s[superscript −1]) with exfoliated h-BN. By placing additional h-BN on a SiO[subscript 2]/Si substrate for a MoS[subscript 2] (WSe[subscript 2]) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times., Korea Institute of Science and Technology. Institutional Program, National Science Foundation (U.S.) (STC Center for Integrated Quantum Materials Grant DMR-1231319), Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies

Large-area two-dimensional (2D) materials grown by chemical vapor deposition need to be transferred onto a target substrate for real applications. Poly(methyl methacrylate) as a supporting layer is widely used during the transfer process and removed after finishing it. However, it is a challenge to diminish the polymer layer completely. It is necessary to readily characterize the polymer residues on 2D materials to facilitate the removal process. Here, we report a method that characterizes the polymer residues on 2D materials by tracking the presence of G-band of amorphous carbons (a-Cs) in the Raman spectrum after forming carbonized a-Cs through thermal annealing. The (13)C-graphene is employed to separate the Raman signal G-band between (12)C-a-Cs and (13)C-graphene in the Raman spectrum. The residence of the polymer residues is clearly confirmed by the different Raman signals of two different isotopes ((12)C and (13)C) due to differences in mass. Our effective method recognizes that while the polymer residue is not easily removed on graphene, those on hexagonal boron nitride and molybdenum disulfide are almost diminished under optimum thermal annealing conditions. Our method will not only contribute to the development of a new transfer process, but also help to achieve a clean surface of 2D materials.