1. High-data-rate photothermal effect graphene detector integrated in a SOI waveguide
- Author
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Simone Marconi, Camilla Coletti, Vito Sorianello, Wolfgang Templ, Vaidotas Miseikis, Fred Buchali, Marco Romagnoli, Stefano Soresi, Alberto Montanaro, Paola Galli, Marco A. Giambra, and Stefano Tirelli
- Subjects
Materials science ,Silicon photonics ,business.industry ,Graphene ,Photothermal effect ,Optical communication ,Photodetector ,law.invention ,law ,Optoelectronics ,Photonics ,business ,Waveguide ,Dark current - Abstract
Graphene has been proposed to be integrated with Si Photonics because of its very high mobility, fast carrier dynamics and ultra-broadband optical properties. High speed graphene photodetectors have been demonstrated so far, however the most are based on the photo-bolometric or photo-conductive effect. These devices are characterized by large dark current, in the order of milli-Amperes. Photothermal effect (PTE) photodetectors can be used in voltage detection mode with no dark current, it is ultra fast and it operates near zero-bias. Graphene PTE-based photodetectors have been reported so far but high-speed optical telecommunication signal detection has not been shown yet. Here, we report on a graphene PTE-based photodetector on SOI waveguide. Thanks to the optimized design we show a direct detection of 105Gb/s non-return to zero (NRZ) and 120Gb/s 4-level pulse amplitude modulation (PAM) optical signals.
- Published
- 2021