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Objective: Exercise rehabilitation is an effective therapy in reducing the disability rate after stroke and should be carried out as early as possible. However, very early rehabilitation exercise exacerbates brain injury and is difficult to conduct in stroke patients due to their weakened and potentially disabled state. It is valuable to explore additional early rehabilitation strategies. Remote Ischemic Conditioning (RIC) is a novel therapy designed to protect vital organs from severe lethal ischemic injury by transient sublethal blood flow to non-vital organs, including the distal limbs, in order to induce endogenous protection. RIC has previously been conducted post-stroke for neuroprotection. However, whether combined early RIC and exercise (RICE) therapy enhances stroke rehabilitation remains to be determined.Methods: This is a single-center, double-blinded, randomized controlled trial that will enroll acute ischemic stroke patients within 24 h of symptom onset or symptom exacerbation. All enrolled patients will be randomly assigned to either the RICE group (exercise with RIC) or the control group (exercise with sham RIC) at a ratio of 1:1, with 20 patients in each group. Both groups will receive RIC or sham RIC within 24 h after stroke onset or symptom exacerbation, once a day, for 14 days. All patients will begin exercise training on the fourth day, twice a day, for 11 days. Their neurological function [Modified Rankin Scale (mRS) score, National Institutes of Health Stroke Scale (NIHSS) score, Barthel Index, and walking ability], infarct volume (nuclear magnetic resonance, MRI), and adverse events will be evaluated at different time points in their post-stroke care.Results: The primary outcome is safety, measured by the incidence of any serious RICE-related adverse events and decreased adverse events during hospitalization. The secondary outcome is a favorable prognosis within 90 days (mRS score < 2), determined by improvements in the mRS score, NIHSS score, Barthel Index, walking ability after 90 days, and infarct volume after 12 ± 2 days.Conclusion: This study is a prospective randomized controlled trial to determine the rehabilitative effect of early RIC followed by exercise on patients with acute ischemic stroke.Trial Registration:www.chictr.org.cn, identifier: ChiCTR2000041042

We demonstrated that Fe/Cr doped and pH-modified CeO2 nanoparticles (NPs) exhibit enhanced photocatalytic performance as compared to bare CeO2 NPs, using photocatalytic degradation. To assess the toxicity level of these double-modified CeO2 NPs on the human skin, they were introduced into HaCaT cells. The results of our conventional cellular toxicity assays (neutral red uptake and 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide for assays) indicated that Cr@CeOx NPs prompt severe negative effects on the viability of human cells. Moreover, the results obtained by scanning transmission X-ray microscopy and bio-transmission electron microscope analysis showed that most of the NPs were localized outside the nucleus of the cells. Thus, serious genetic toxicity was unlikely. Overall, this study highlights the need to prevent the development of Cr@CeOx NP toxicity. Moreover, further research should aim to improve the photocatalytic properties and activity of these NPs while accounting for their stability issues.

The surface morphology and electronic structure of hexagonal graphene onion rings (HGORs), a modified graphene structure, were investigated to confirm the possibility as an efficient catalyst when compared to graphene. After confirming the formation of HGORs with a smaller width (~4.2 μm) from scanning electron microscopy (SEM) and optical microscopy images, we compared the catalytic activities of HGORs and graphene by measuring the rate of oxidation of thiophenol using high-resolution photoemission spectroscopy (HRPES). In addition, we also assessed in 4-chlorophenol degradation and the OH radical formation with a benzoic acid to confirm the possibility for photocatalytic activities of HGORs. As a result, we confirmed that HGORs, which has an increased active site due to its three-dimensional structure formed by the reaction of graphene with hydrogen, can act as an effective catalyst. In addition, we could also realize the possibility of optical applicability by observing the 0.13 eV of band gap opening of HGORs.

While reduced graphene oxide (rGO) is used widely as a catalyst, its catalytic activity can be improved significantly by modifying it with a metal. In this study, we compared the photocatalytic and catalytic properties of base-treated rGO particles and transition-metal-ion-doped rGO based on the oxidation reaction of thiophenol and the photocatalytic degradation of 4-chlorophenol. Since the two catalytic activities are related to the changes in the electronic structure of rGO, X-ray photoemission spectroscopy, X-ray absorption spectroscopy, and Raman spectroscopy were performed. When rGO was doped with Mn2+ ions, its catalytic properties improved with respect to both reactions. The changes in the electronic structure of rGO are attributed to the formation of defect structures on the rGO surface via a reaction between the doped Mn2+ ions and oxygen of the rGO surface. Thus, the results show that the doping of rGO with Mn ions in the +2-charge state (stable oxide form: MnO) enhances its catalytic and photocatalytic activities. Hence, this study provides new insights into the use of defect-controlled rGO as a novel catalyst.

To compare the catalytic oxidation activities of reduced graphene oxide (rGO) and rGO samples doped with five different transition metals (TM-rGO), we determine their effects on the oxidation of L-cysteine (Cys) in aqueous solution by performing electrochemistry (EC) measurements and on the photocatalytic oxidation of Cys by using high-resolution photoemission spectroscopy (HRPES) under UV illumination. Our results show that Cr-, Fe-, and Co-doped rGO with 3+ charge states (stable oxide forms: Cr3+, Fe3+, and Co3+) exhibit enhanced catalytic activities that are due to the charge states of the doped metal ions as we compare them with Cr-, Fe-, and Co-doped rGO with 2+ charge states. Graphical Abstract The SEM images and the corresponding EC measurements for (a) Cr3+, (b) Fe3+, and (c) Co3+ doped rGO

We have investigated the properties of a self-assembled purine (C5H4N4) monolayer on epitaxial graphene (EG) on SiC by using high resolution X-ray photoemission spectroscopy (HRPES) and near-edge X-ray absorption of fine structure (NEXAFS). The monolayer of purine on graphene was prepared inside a UHV chamber. The spontaneously-assembled monolayer of purine molecules were oriented parallel to the surface of the monolayer graphene, and it reaches a charge equilibrium state on the monolayer graphene.

Graphene domains with different sizes and densities were successfully grown on Cu foils with use of a chemical vapor deposition method. We investigated the effects of volume ratios of argon to hydrogen during the annealing process on graphene growth, especially as a function of hydrogen partial pressure. The mean size and density of graphene domains increased with an increase in hydrogen partial pressure during the annealing time. In addition, we found that annealing with use of only hydrogen gas resulted in snowflake-shaped carbon aggregates. Energy-dispersive X-ray spectroscopy (EDX) and high-resolution photoemission spectroscopy (HRPES) revealed that the snowflake-shaped carbon aggregates have stacked sp2 carbon configuration. With these observations, we demonstrate the key reaction details for each growth process and a proposed growth mechanism as a function of the partial pressure of H2 during the annealing process.

The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation reaction were compared by using Raman spectroscopy, high-resolution photoemission spectroscopy (HRPES), and work function measurements as well as scanning electron microscopy (SEM). The oxygen carriers’ existence on GO film, which includes a lot of oxygen carriers, can facilitate the aniline to azobenzene oxidation reaction with slightly partial conversion of aniline to nitrobenzene, as determined by the Raman shifts and core-level spectra resulting from exposure to aniline. The work function of the GO film was found to change dramatically in comparison with rGO film, indicating that aniline exposed to a GO film produced n-type doping characteristics by electron charge transfer from GO to aniline. These results indicate that the oxygen carriers on a GO film oxidize aniline to azobenzene and show that GO film prefers to act as a reaction reagent rather than rGO.

In order to compare the catalytic activities of reduced graphene oxide (rGO), graphene oxide (GO), and graphene, we conducted oxidation of 2-aminothiophenol (2-ATP) and reduction of nitrobenzene (NB) in their presence by using high-resolution photoemission spectroscopy (HRPES). In addition, we determined conversion rates of CO to CO2 in the presence of these catalysts by performing a residual gas analyzer (RGA) under a UHV condition, Orange II and methylene blue degradations UV-vis spectrophotometry, and electrochemistry (EC) measurements in an aqueous solution, as well as by obtaining cyclic voltammograms and determining the change of the condition of electrodes before and after the oxidation of 2-ATP. We found that we can successively fabricate GO (oxidation) and graphene (reduction) from rGO by controlling the oxidation or reduction procedure time and then clearly comparing the critical properties among them as we perform various oxidation and reduction activities.

We measured magneto-optical images (MOIs) on a coated conductor comprised of (Gd,Y)1Ba2Cu3O7−δ-BaZrO3 film under applied magnetic field of various orientations. MOIs showed systematic changes of asymmetric distribution of magnetic flux density and critical current density. TEM measurements showed that nano-rod pinning centers (RPCs) tilt by ∼13° from the c-axis. We were able to explain the results of MOI measurements using a simple model calculation about vortex line shapes, which change according to the magnitude and the orientation of applied magnetic field. In this model the critical current density, which is due to the vortex pinning, is determined by the geometrical relationship of the curved vortex lines and the tilted RPCs.

The modification of the electronic properties of a coverage-dependent graphene layer by nitrogen ions irradiation was investigated using core-level photoemission spectroscopy (CLPES). Here we describe preparation of monolayer and multilayer epitaxial graphene (EG) functionalized by nitrogen ions irradiation with 100 eV to minimize the damage of graphene layer as we annealed up to 1300 K to track the surface property changes using CLPES. As a result, on the monolayer EG, we found that pyridinic nitrogen mainly existed on the surface. On the multilayer EG, we observed the formation of graphitic nitrogen remaining as a major species confirmed using N 1s core-level spectra. Through a work function change (ΔΦ) measurement, both systems indicated p-type doping properties with 4.71 (monolayer EG) and 4.87 eV (multilayer EG) of work function values after N2 ion irradiation. Interestingly, we observed that monolayer EG maintained its p-type doping character, whereas multilayer EG changed the doping character from ...

The discrepancy of geometric configuration between phenylalanine and tyrosine adsorbed on Ge(100) surfaces was investigated using scanning tunneling microscopy (STM) in conjunction with density functional theory (DFT) calculations and core-level photoemission spectroscopy (CLPES). The study focused on the role of nucleophilic group (hydroxyl group) on phenyl ring of tyrosine, and we elucidated the difference of the adsorption geometry between phenylalanine and tyrosine on Ge(100) surfaces. We first confirmed that the “O–H dissociated–N dative bonded structure” was the most favorable structure in both molecules at low coverage by results of CLPES and DFT calculations. Geometric differences for the adsorption configurations between phenylalanine and tyrosine were observed: the phenyl ring of phenylalanine was aligned axially with respect to the Ge(100) surface, whereas that of tyrosine was tilted, as determined by DFT calculations. In sequence, we found out the results of STM images to confirm DFT results. ...

We investigate the variation of the electronic properties and morphological surface change of epitaxial graphene (EG) by chemically functionalizing the graphene layer with a surface-adsorbed organic free radical, 2,2,6,6-tetramethyl-1-piperridinyloxy (TEMPO) using scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and core-level photoemission spectroscopy (CLPES). STM and LEED images revealed that the adsorption of TEMPO occurred at the interface regions, observed as surface roughness in STM images and haziness in the (6(31/2) × 6(31/2))R30° LEED patterns. TEMPO molecules adsorbed onto EG through the NO radical group, as confirmed by the binding energies of the N 1s and O 1s core-level spectra. Changes in the work function, as measured by secondary electron edge, indicated that the adsorption of NO free radicals onto EG acts as an n-type dopant.

The ring formation and electronic properties of furan adsorbed on graphene layers grown on 6H-SiC (0001) has been investigated using atomic force microscopy (AFM), near edge X-ray absorption fine structure (NEXAFS) spectra for the C K-edge, and core level photoemission spectroscopy (CLPES). Moreover, we observed that furan molecules adsorbed on graphene could be used for chemical functionalization via the lone pair electrons of the oxygen group, allowing chemical doping. We also found that furan spontaneously form rings with one of three different bonding configurations and the electronic properties of the ring formed by furan on graphene can be described using by AFM, NEXAFS and CLPES, respectively.

Radioactive rare earth chlorides in waste LiCl–KCl molten salts have to be separated as a stable form to minimize waste volume and to achieve stable solidification. In this work, thermal behavior of rare earth chlorides (CeCl3, GdCl3, NdCl3, PrCl3) was investigated in an oxygen condition to recover rare earth oxides from a LiCl–KCl–RECl3 system. The rare earth chlorides in the LiCl–KCl molten salts were smoothly converted to an oxychloride form at a higher temperature than 650 °C, except for CeCl3. CeCl3 was totally converted to an oxide from at a higher temperature than 450 °C. The rare earth oxychlorides (GdOCl, NdOCl, PrOCl) were effectively converted to oxide forms at a higher temperature than 1100 °C. It was confirmed that rare earth oxides can be recovered from a LiCl–KCl–RECl3 system without impurity generation.

The adsorption configurations of S-proline on Ge(100) were studied using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution photoemission spectroscopy (HRPES). We identified three adsorption structures of S-proline on Ge(100) through analysis of the STM images, DFT calculations, and HRPES results: (i) an “intrarow O−H dissociated and N dative bonded structure”, (ii) an “O−H dissociation structure”, and (iii) an “N dative bonded structure”. Moreover, because adsorption through the N atom of S-proline creates a new chiral center due to symmetry reduction produced by N dative bonding with the surface, the adsorption configurations of S-proline on Ge(100) have either (R,S) or (S,S) chirality. Through DFT calculations, we clearly demonstrated that the adsorption configurations have (R,S) chirality with a preference for reaction at the Re face. This work presents a novel method for generating stereoselective attachment using S-proline molecules adsorbed on a G...

The Chemical Doping of epitaxial graphene (EG) due to p-tert-butylcalix[4]arene was investigated using high resolution photoemission spectroscopy (HRPES). The measured work function changes verified that increased adsorption of the p-tert-butylcalix[4]arene on EG showed p-type doping characteristics due to charge transfer from the graphene to the p-tert-butylcalix[4]arene through the hydroxyl group. A single oxygen bonding feature associated with the O 1s peak was clearly observed in the core-level spectra, indicating the presence of one equivalent adsorption state.

Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich (6√3 × 6√3)R30° layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).

Chemical doping of epitaxial graphene (EG) by organic free radicals (4-amino-2,2,6,6-tetramethyl-1-piperridinyloxy; 4-amino-TEMPO) was investigated using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and high resolution photoemission spectroscopy (HRPES). STM images revealed that the empty density of states near the adsorption site significantly decreased as a result of radical doping. STS indicated that 4-amino-TEMPO radicals acted as n-type dopants on monolayer graphene. The radicals adsorbed onto EG through the nitroxide groups, leaving the amine group unreacted, which was confirmed by the binding energies of N 1s and O 1s core-level spectra. Furthermore, the measured work function changes verified that increased adsorption of the radicals on EG showed n-type doping characteristics.

The adsorption geometry of cis-2-butene-1,4-diol (BEDO, HOCH(2)CH=CHCH(2)OH) on Si(100)-2 x 1 was studied using scanning tunneling microscopy (STM), high resolution X-ray photoemission spectroscopy (XPS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Bias-voltage-dependent STM images exhibited features characteristic of two distinct BEDO adsorption geometries. One feature was a bright protrusion located on the center of a single dimer, indicating an on-top configuration. The low bias-voltage STM image clearly showed dark features indicative of the formation of Si-H bonds on adjacent dimers in the same dimer row. The other feature was a bright protrusion bridged on end between two adjacent dimers in the same dimer row, indicating an end-bridge configuration. Accompanying this feature, two dark features attributed to Si-H bonds were observed on opposite positions to the bridged protrusion. From the XPS results, the Si 2p core level spectra revealed that the dimer atoms are involved in the formation of Si-O and Si-H bonds. On the other hand, carbon K-edge NEXAFS spectra showed that the C=C bond does not participate in the adsorption reaction and remains as an unreacted group. Collectively, the experimental results indicate that the adsorption of BEDO on Si(100)-2 x 1 occurs through the formation of two Si-O bonds via nucleophilic reaction between the two OH groups of BEDO and two Si-Si dimers. Importantly, the maintenance of the C=C bond means that the C=C functional group can be utilized as a new reaction site for further surface chemical reactions.

We studied ultrathin Co overlayers on top of vicinal Cu(100) and Cu(111) surface using high resolution photoemission spectroscopy to clarify the phenomena of surface alloying at low coverage. The valence band spectrum of Co/Cu(100) clearly shows the change in its electronic structure. A peak at the binding energy of 0.3 eV represents the mixing of Co and Cu at the surface, as has been reported by STM. This state becomes more enhanced upon annealing . Mixing the Co overlayer with Cu atoms on top of Cu (111) surface is relatively small at room temperature. Instead, wetting along the step edge has been found for low coverage. Interesting state responsive to the electric field of the incident photon has been found and a possible origin has been discussed.

We investigate the temperature-dependent surface etching process induced by Ce silicide on Si(1 0 0) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(1 0 0) surface are gradually roughened due to the formation of Ce silicide as a function of substrate temperature. Unlike the Si(1 1 1) surface, however, terrace etching also occurs in addition to step roughening at 500 °C. Moreover, we found that Si(1 0 0) dimers are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(1 0 0) surface occurs the defect-induced strain at higher temperature (∼600 °C).

One-dimensional Ce nanowires have been grown on a single-domain vicinal Si(1 0 0) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Ce coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Ce nanowires along the step edges on the vicinal Si(1 0 0) substrate at 580 °C.

Chemically modified epitaxial graphene (EG) by azidotrimethylsilane (ATS) was investigated using high-resolution photoemission spectroscopy (HRPES). Through the spectral analysis, we clearly confirmed that EG is modified by thermally generated nitrene radicals and found that the bonding nature between the nitrene radicals and EG is covalent. As we observe bonding nature of N 1s peaks, we found that two distinct N peaks can be clearly distinguished in the spectra. Using a covalently bound stretched graphene (CSG) model, we elucidated that nitrene radicals adsorb on the graphene layer at two different adsorption sites. Moreover, we were able to control the band gap of EG using valence band spectra as we change the amount of the dosing of nitrene.

Graphene layers grown on 6H-SiC(0001) were irradiated with 1 MeV electron beam to functionalize its surface. A surface analysis using atomic force microscopy, the near edge X-ray adsorption fine structure spectra of C K-edge, and photoemission spectroscopy suggests that the electron beam irradiation in ambient condition can induce oxidation of the graphene layer.

Graphene oxide has recently been considered to be a potential replacement for cadmium-based quantum dots due to its expected high fluorescence. Although previously reported, the origin of the luminescence in graphene oxide is still controversial. Here, we report the presence of core/valence excitons in graphene-based materials, a basic ingredient for optical devices, induced by quantum confinement. Electron confinement in the unreacted graphitic regions of graphene oxide was probed by high resolution X-ray absorption near edge structure spectroscopy and first-principles calculations. Using experiments and simulations, we were able to tune the core/valence exciton energy by manipulating the size of graphitic regions through the degree of oxidation. The binding energy of an exciton in highly oxidized graphene oxide is similar to that in organic electroluminescent materials. These results open the possibility of graphene oxide-based optoelectronic device technology. Published version

The oxidation of aniline to azobenzene was conducted in the presence of either monolayer graphene (EG) or graphene-oxide-like surface, such as GOx, under ultra-high vacuum conditions maintaining a 365-nm UV light exposure to enhance the oxidation reaction. The surface-bound products were investigated using micro Raman spectroscopy, high-resolution photoemission spectroscopy, and work function measurements. The oxygen carriers present on the GOx surfaces, but not on the EG surfaces, acted as reaction reagents to facilitate the oxidation reaction from aniline to azobenzene. Increasing the aniline concentration at 300 K confirmed that the exchange ratio from the aniline to the azobenzene was enhanced, as determined by the intensity ratio between the aniline- and azobenzene-induced N 1 s core-level spectra. The work function changed dramatically as the aniline concentration increased, indicating that the aniline on the GOx surface conveyed n-type doping characteristics at a low coverage level. A higher aniline concentration increased the p-type doping character by increasing the azobenzene concentration on the GOx surface. A comparison of the oxidation reactivity of aniline molecules on the EG or GOx surfaces revealed the role of the oxygen carriers on the GOx surfaces in the context of catalytic oxidation.

Using low-energy electron diffraction and scanning tunnelling microscopy, we studied the formation of Mg silicide and metallic Mg islands on a Si(111)-7 × 7 surface at room temperature as a function of Mg coverage. We found that the mechanism by which Mg islands grew on the Si(111)-7 × 7 surface, and the morphology of the islands that formed, depended on whether the Mg deposition was performed in a stepwise or continuous manner. When Mg was deposited in a stepwise manner, with 1 h between deposition events, an amorphous Mg silicide overlayer formed on the Si(111)-7 × 7 surface during the initial stage of deposition (up to 2.0 ML Mg coverage), as shown by the observation of δ7 × 7 and 1 × 1 low-energy electron diffraction patterns. Upon further stepwise Mg deposition, round-shaped Mg islands grew on the amorphous Mg silicide layer, as shown by scanning tunnelling microscopy and the emergence of a 1 × 1 low-energy electron diffraction pattern. If, on the other hand, the Mg was deposited continuously in a single step, hexagonal Mg islands formed on the flat Mg silicide layers, and a [Formula: see text] and 1 × 1 mixed phase was observed. Moreover, using scanning tunnelling spectroscopy, we confirmed the semiconducting and metallic nature of the Mg silicide layer and hexagonal Mg islands on the Si(111)-7 × 7 surface depending on their Mg coverage, respectively.

The adsorption structure of glycine on Ge(100) was investigated using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We found a major adsorption feature of glycine on Ge(100) in the STM images. This feature appeared as a bright protrusion between two dimer rows with a dark adjacent dimer. The position of the bright protrusion located in the middle of the two dimer rows indicates a multibonding adsorption structure. The results of the theoretical calculations confirm that the adsorption structure of glycine on Ge(100) (between two possible multibonding adsorption structures) is an "intrarow O-H dissociated and N dative bonded structure". In the HRCLPES experiments, we found an N 1s peak (at 399.5 eV) and two O 1s peaks (at 531.1 and 532.0 eV), which represent strong evidence that the adsorption configuration of glycine on Ge(100) is composed of both O-H dissociation and N dative bonding. All our STM, DFT, and HRCLPES results suggest that the adsorption structure of glycine molecules on Ge(100) is an "intrarow O-H dissociated and N dative bonded structure".

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.

The adsorption geometry of thiophene on Ge(100) have been studied by high‐resolution core‐level photoemission spectroscopy (HRPES) using synchrotron radiation and scanning tunneling microscopy (STM). From the analysis of the Ge 3d, S 2p, and C 1s core‐level photoemission spectra, we found three different adsorption geometries, which were assigned to a dative bonding feature, a [4+2] cycloaddition reaction product, and a desulfurization reaction product. Furthermore, we investigated that the ratio of the components induced by three adsorption geometries changed depending on the molecular coverage and the annealing temperature. At low coverage, the kinetically favorable dative bonding features favorably form 1‐D molecular chains. Increasing the molecular coverage, the energetically more stable [4+2] cycloaddition reaction products are additionally created.

We have studied the adsorption and decomposition of thiophene (C4H4S) on Ge(100) using scanning tunneling microscopy (STM), high-resolution core-level photoemission spectroscopy (HRPES), and density functional theory (DFT) calculation. Analysis of S 2p core-level spectra reveals three adsorption geometries, which we assign to a Ge-S dative bonding state, a [4 + 2] cycloaddition bonding state, and a decomposed bonding state (desulfurization reaction product). Furthermore, we found that the number ratio of the three adsorption geometries depended on the molecular coverage and the annealing temperature. At low coverages, the kinetically favorable dative bonding state is initially formed at room temperature. As the molecular coverage increases, thermodynamically stable [4 + 2] cycloaddition reaction products are additionally produced. In addition, we found that as the surface temperature increased, the [4 + 2] cycloaddition reaction product either possibly desorbed as molecular thiophene or decomposed to form a metallocycle-like species (C4H4Ge2) and a sulfide (Ge2S). We systematically elucidate the changes in the bonding states of adsorbed thiophene on Ge(100) according to the thiophene coverage and annealing temperature.

The adsorption of thiophene on Ge(100) has been studied using scanning tunneling microscopy (STM), high-resolution core-level photoemission spectroscopy (HRPES), and density functional theory (DFT) calculations. Until now, thiophene is known to react with the Ge(100) dimer through a [4 + 2] cycloaddition reaction at room temperature, similar to the case of thiophene on Si(100). However, we found that thiophene has two adsorption geometries on Ge(100) at room temperature, such as a kinetically favorable Ge−S dative bonding configuration and a thermodynamically stable [4 + 2] cycloaddition adduct. Moreover, our STM results show that under 0.25 ML thiophene molecules preferentially produce one-dimensional molecular chain structures on Ge(100) via the Ge−S dative bonding configuration.

The adsorption and decomposition of AlCl3 on Ge(100) was studied using scanning tunneling microscopy (STM) and high-resolution core-level photoemission spectroscopy (HRCLPES). Through the analysis of the STM image and Ge 3d and Cl 2p core-level spectra of AlCl3 on Ge(100), we found that an AlCl3 molecule reacts with two Ge atoms via a cycloaddition reaction, which forms Cl−Ge and AlCl2−Ge without breaking AlCl3. Additionally, by considering valence shell electron pair repulsion (VSEPR) arguments, the effect of molecular structure on the surface chemistry was explained. To our knowledge, the adsorption of Lewis acid molecules on a semiconductor surface has not been studied in detail. These are the first results for the adsorption structures of Lewis acid molecule on Ge(100).

We introduced nitrogen ions to modify the graphene surface and its property changes were investigated. A graphene layer grown on 6H-SiC(0001) was irradiated with 100 eV nitrogen ions. Surface property changes were studied using photoemission spectroscopy (PES), near edge x-ray adsorption spectroscopy (NEXAFS), and atomic force microscopy(AFM). N 1s core level spectra show that three kinds of nitrogen species, nitrogen gas, graphite-like and pyridine-like nitrogen were induced on the nitrogen ion implanted graphene surface.

We measure the resistivity of platinum-silicide nanowires (Pt2Si NWs) epitaxially formed on a Si(100) surface using double-scanning-probe tunneling microscope. Despite the large Schottky barrier height reported on a macroscopic Pt2Si∕n-Si interface, leakage current through the substrate is observed in the resistance measurement, and is quantitatively estimated to be separated from the current through the nanowire. The measured resistivity of Pt2Si NWs is about half the reported resistivity of thick Pt2Si films, which could be due to additional conduction paths through surface or interface states on NWs.

We investigated the electronic and structural properties of graphene layers grown on a 6H-SiC (Si-terminated) substrate by using core level photoemission spectroscopy (CLPES), low energy electron diffraction (LEED), and near edge x-ray absorption fine structure (NEXAFS). The angle between the plane of the graphene sheet and the SiC substrate was measured by monitoring the variation of the π* transition in the NEXAFS spectrum with the thickness of the graphene layers. As the thickness of the graphene layers increased, the angle gradually decreased.

We report the experimental evidence of significant change of the valence band structure during crystallization of Ge2Sb2Te5 (GST). Amorphous GST, prepared by sputter deposition at room temperature (RT), transforms successively into face-centered-cubic (fcc) and a hexagonal-close-packed (hcp) structures at around 150 and 300°C, respectively, during a stepwise temperature increase from RT to 350°C. During temperature increase, ultraviolet photoemission spectra were in vacuo obtained using synchrotron radiation. The measurement of the amorphous and fcc GST shows that the difference between the maximum valence band edge and the Fermi level reduces by 0.35eV during crystallization. For the fcc to hcp phase transformation, no band gap reduction was observed.

We investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunnelling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 × 2) reconstructions also appear adjacent to the tetragonal Pt2Si nanowires. Formation of the Pt2Si nanowires is attributed to the anisotropic lattice mismatches between the tetragonal Pt2Si structure and Si(100). Scanning tunnelling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy.

Purpose: An air bubble‐free flood phantom with grid patterns is fabricated to measure extrinsic resolution and linearity of PET scanner. It is designed to implement a 99m‐Tc flood phantom with motorized water pump to reduce the shaking procedure as well as reduce radiation exposure to workers. Method and Materials: The flood phantom is fabricated with circular (50cm diameter) and rectangular shapes (60cm*40cm) to measure the extrinsic resolution of conventional gamma camera. It has a handle in which an air pocket and water pump are placed. The air pocket is made of two chambers with conical valve between them. During the shaking procedure, the air bubbles are sucked into to the air pocket due to gravity effect and water perturbation. Once the air bubbles are trapped in the air pocket. They could not escape from it. After the radioisotopes are injected through a pin hole in the air pocket, water pump is turned on. The shaking procedure starts. In order to estimate the effectiveness of the shaking mechanism, the survey meter with well‐guided collimator is manually rotated on the flood phantom until uniformity of 3% is reached. It take approximately 5 minutes to mix the water with radioisotopes thoroughly. Results: The phantom is used to evaluate the extrinsic resolution and to estimate the uniformity/linearity of gamma camera or SPECTcamera.. The images are analyzed to quantitatively measure the integral and differential uniformity and the non‐linearity of the imaging system. The detailed data will be presented in the meeting. Conclusion: The phantom was very handy and effective to minimize radiation exposure to an operator. The multi‐channel ionization chamber will be replaced manual rotation procedure to design fully automatic monitoring system.