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This paper presents an ultra-low-profile copper indium gallium selenide (CIGS) based solar cell integrated antenna with a high form factor. A tiny slot was etched from the solar cell to develop an ultra-low-profile solar-cell-integrated antenna. This tiny slot increases the form factor due to the small clearance area from the solar cell. A ground-radiation antenna design method was applied in which lumped elements were employed inside the tiny slot for antenna operation. Another substrate was used under the solar cell for designing the feeding structure with lumped elements connected to the tiny slot using via holes. A prototype was fabricated and measured to verify the operation of a built-in solar-cell antenna and validate the simulated results. The measured results demonstrate that the solar-cell-integrated antenna covers the entire frequency range of the Industrial Scientific Medical band, from 2.4 to 2.5 GHz, with a maximum gain of 2.79 dBi and radiation efficiency higher than 80% within the impedance bandwidth range. Moreover, the proposed design has an ultra-low-profile structure of only 0.0046 λo, where λo represents the free space wavelength at 2.45 GHz, and a high form factor of 99.1% with no optical blockage. The antenna and solar cell were designed to avoid affecting the performance of each other using the radio-frequency decoupler.

Vertical heterostructures of graphene and MoS2 are realized by successive growth of MoS2 and graphene, each by chemical vapor deposition. The MoS2 coverage on graphene is controlled by ozone treatment of graphene, which affects the absorption and aggregation of the nucleation promoter perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) for MoS2 seeds on the graphene surface. Mostly single or bilayer MoS2 flakes are grown on graphene with negligible defects even after the ozone treatment and the high-temperature growth process (up to 650 °C). Efficient charge transfer in the grown heterostructures is observed in the photoluminescence and photoresponses of devices based on the heterostructures.

We propose a theoretical model simulating ultrafast electron emission at the edge of a two-dimensional conducting sheet due to a strong field tunneling process in the presence of a static electric field. Under the assumption of a charge distribution following the square root law associated with a Sommerfeld half plane, the electric field was found to exhibit square-root dependence. The electron emission yield was estimated based on a Fowler-Nordheim tunneling, from which the resultant current flow was calculated by using the quasi-classical model. Importantly, we considered the number of the recoil electrons that do not contribute to the net current. We found a large variation in the nonlinearity of the power-dependence of the net field-emission yield; this is due to the combined contributions of the laser field irradiation and a static electric field. The validity of our model was confirmed based on experimental results obtained using devices with a nanometer-sized gap fabricated on a single layer of graphene.

In this study, we proposed a fast and effective technique to remove residual poly(methyl methacrylate) (PMMA) after its use as a supporting layer for transferring graphene films on a large scale with high productivity. We utilized a methyl isobutyl ketone (MIBK) solution, which is commonly used to develop PMMA layers, for an e-beam lithography process. This was done because MIBK molecules tend to inflate the PMMA layer, weakening the link between PMMA and the graphene surface. Field-effect transistors were fabricated on the transferred graphene, with which we addressed the Dirac points and their carrier motilities. We observed that due to the reduced p-doping effects, the Dirac points were located closer to the zero-gate bias compared to those obtained using the acetone treatment. Finally, the average device mobility reached 5400 and 3900 cm2/Vs for holes and electrons, respectively. These values are more than five times the values obtained using the conventional acetone treatment.

The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The flat-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band offset between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average.

Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. However, the on/off ratio and photoresponsivity of graphene are typically low. Transition metal dichalcogenides (e.g., MoSe2) are semiconductors with high photoresponsivity but lower mobility than that of graphene. Here, we propose a graphene/MoSe2 barristor with a high-k ion-gel gate dielectric. It shows a high on/off ratio (3.3 × 104) and ambipolar behavior that is controlled by an external bias. The barristor exhibits very high external quantum efficiency (EQE, 66.3%) and photoresponsivity (285.0 mA/W). We demonstrate that an electric field applied to the gate electrode substantially modulates the photocurrent of the barristor, resulting in a high gate tuning ratio (1.50 μA/V). Therefore, this barristor shows potential for use as an ambipolar transistor with a high on/off ratio and a gate-tunable photodetector with a high EQE and responsivity. An approach that enhances control over charge carrier movement in graphene-based transistors may be useful in applications such as bendable circuits and light sensors. The difference in current flow when a transistor turns from on to off plays a critical role in determining device performance. Bae Ho Park from Konkuk University in Seoul, South Korea, and colleagues report that stacking graphene on top of another two-dimensional (2D) film of molybdenum selenide can lead to larger on/off current ratios than conventional graphene transistors. Optical and electrical characterizations revealed that the interface between the 2D films created a potential barrier that blocked current flow in the device’s off state without compromising graphene’s mechanical flexibility. Using an external voltage to modulate current flow through the barrier region also allowed the stacked device to serve as a high-efficiency photodetector. we report a field-effect device with a graphene/MoSe2 channel layer and high-k ion-gel gate dielectric. The device shows a high carrier mobility (~247 cm2/V ∙ s), a high on/off ratio (3.3 × 104), and ambipolar behavior that are controlled by an applied gate voltage. The strong gating effect of the device results in higher external quantum efficiency (EQE) (66.3%), photoresponsivity (285.0 mA/W), and gate-tuning ratio (1.50 μA/V) compared to pristine devices. Therefore, our graphene/MoSe2 barristor device can be a suitable candidate for use in ambipolar transistors and gate-tunable broad-area photodetectors.

This study investigates recent advances in photoelectron emission generated by irradiating ultrashort lasers on metallic nanostructures and low-dimensional carbon materials. Recently, primary focus has been on improving the efficiency of emitters, i.e. increasing the number of field-emitted electrons and their respective kinetic energies. An example of this is the modification of the conventional metal nanotip through adiabatic nanofocusing and various plasmonic metal structures, such as nanorods and bowtie antenna. The coherent emission control with two color irradiation enabled modulation in the emission yield. In addition, THz waves near the metallic nanostructure induced a highly accelerated, monochromatic energy. Alternative to metallic nanotips, carbon nanotubes are emerging as efficient photoelectron emitters, due to the large enhancement factor associated with their high aspect ratio and damage threshold. They particularly allowed the use of femtosecond light sources with a relatively short wavelength, resulting in the generation of photoelectrons with a narrow bandwidth. Additionally, electronic control over the single-walled nanotubes band structure added a degree of freedom for controlling the electron emission yield. Finally, we review the strong-field tunneling emission in graphene edge, with the emission yield showing an anomalous increase of nonlinear order, corresponding to the deep strong tunneling regime.

We demonstrate subcycle electron pulse generation in a nanogap of graphene when irradiated by a femtosecond laser pulse in the near-infrared region (800 nm). A strong photoinduced emission was prod...

We investigated operation of a planar MAPbI3 solar cell with respect to intensity variation ranging from 0.01 to 1 sun. Measured J-V curves consisted of space-charge-limited currents (SCLC) in a drift-dominant range and diode-like currents in a diffusion-dominant range. The variation of power-law exponent of SCLC showed that charge trapping by defects diminished as intensity increased, and that drift currents became eventually almost ohmic. Diode-like currents were analysed using a modified Shockley-equation model, the validity of which was confirmed by comparing measured and estimated open-circuit voltages. Intensity dependence of ideality factor led us to the conclusion that there were two other types of defects that contributed mostly as recombination centers. At low intensities, monomolecular recombination occurred due to one of these defects in addition to bimolecular recombination to result in the ideality factor of ~1.7. However, at high intensities, another type of defect not only took over monomolecular recombination, but also dominated bimolecular recombination to result in the ideality factor of ~2.0. These ideality-factor values were consistent with those representing the intensity dependence of loss-current ratio estimated by using a constant internal-quantum-efficiency approximation. The presence of multiple types of defects was corroborated by findings from equivalent-circuit analysis of impedance spectra.

Electrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated.

Nucleation and growth characteristics of HfO2 thin films on graphene are investigated using atomic layer deposition (ALD). Substantial delay (∼70 ALD cycles) in the nucleation of HfO2 films is observed during HfO2 ALD on graphene, which causes large leakage current in Au/HfO2/graphene capacitors at low HfO2 ALD cycles (

We demonstrated imaging of the depletion layer in a MoS2/graphene heterojunction fabricated by chemical vapor deposition and obtained their transport parameters such as diffusion length, lifetime, and mobility by using scanning photocurrent microscopy (SPCM). The device exhibited a n-type operation, which was determined by the MoS2 layer with a lower mobility. The SPCM revealed the presence of the depletion layer at the heterojunction, whereas graphene provided an excellent electrical contact for the MoS2 layer without resulting in a rectifying behavior, even if they were anchored within a very short range. The polarity of the photocurrent signal switched when we applied a drain–source bias voltage, from which we extracted the potential barrier at the junction. More importantly, a bias-dependent SPCM allowed us to simultaneously record the diffusion lengths of both majority and minority carriers for the respective MoS2 and graphene layers. By combining the diffusion lengths with the lifetimes measured by ...

We investigate the interaction of carbon nanotubes (CNTs) embedded in a polymer matrix [poly(methyl methacrylate) (PMMA)] with Ar plasma, which results in the formation of PMMA nanostructures, as CNTs act as an etching mask. Because of the large differences in the Ar ion sputtering yields between CNTs and PMMA, PMMA lines with the width comparable to that of CNTs and as high as 20 nm (for single-walled CNTs) or 80 nm (for multiwalled CNTs) can be obtained after repeated exposure of CNT/PMMA films to Ar plasma. We also follow the etching process by investigating changes in the IV characteristics and Raman spectra of CNTs after each exposure to Ar plasma, which shows progressive defect generations in CNTs while they maintain structural integrity long enough to act as the etching mask for PMMA underneath. We demonstrate that the PMMA nanostructure patterns can be transferred to a different polymer substrate using nanoimprinting.

We report an in situ characterization of transition-metal dichalcogenide (TMD) monolayers and twisted bilayers using a high-speed second-harmonic generation (SHG) imaging technique. High-frequency laser modulation and galvano scanning in the SHG imaging enabled a rapid identification of the crystallinity in the TMD, including the orientation and homogeneity with a speed of 1 frame/s. For a twisted bilayer MoS2, we studied the SHG peak intensity and angles as a function of the twist angle under a strong interlayer coupling. In addition, rapid SHG imaging can be used to visualize laser-induced ablation of monolayer and bilayer MoS2 in situ under illumination by a strong femtosecond laser. Importantly, we observed a characteristic threshold behavior, the ablation process occurred for a very short time duration once the preheating condition was reached. We investigated the laser thinning of the bilayer MoS2 with different twist angles. When the twist angle was 0°, the SHG decreased by approximately one-fourth of the initial intensity when one layer was removed. Conversely, when the twist angle was approximately 60° (the SHG intensity was suppressed), the SHG increased abruptly close to that of the nearby monolayer when one layer was removed. Precise layer-by-layer control was possible because of the unique threshold behavior of the laser-induced ablation.

We demonstrate all-optical switching of plasmonic resonance patterned on the carbon nanotube films supported on the silicon substrates. A considerable suppression of terahertz wave was observed in the transmission resonance, when the near-infrared femtosecond laser pulse is irradiated. A Fourier-transformed terahertz spectrum reveals that the resonance feature that was governed by the geometry of the slot antenna are almost completely removed with the laser irradiation having sufficiently high pulse energy reaching 18 μJ. A screening of terahertz field was analyzed in terms of the free carrier generation originating from the photoexcitation in semiconductor film.

Vibrational modes in the terahertz (THz) frequency range are good indicators of lead halide perovskite's crystallization phase. We performed real-time THz spectroscopy to monitor the crystallization kinetics in the perovskite films. First, THz absorptance was measured while the perovskite film was annealed at different temperatures. By analyzing the Avrami exponent, we observed an abrupt dimensionality switch (from 1D to 2D) with increasing temperature starting at approximately 90 °C. We also monitored the laser-induced crystallinity enhancement of the preannealed perovskite film. The THz absorptance increased initially, then subsequently decayed over a couple of hours, although the enhancement factor varies depending on the film crystallinity. In particular, the Avrami analysis implied that the light-induced crystallization was assisted by the 1D diffusion processes. The activation photon energy was measured at 2.3 eV, which indicated that enhanced crystallization originated from the photoinduced structural change of residual lead iodide at the grain boundary.

Graphene has emerged as a promising 2-dimensional (2D) material composed of a monolayer of carbon atoms, which is expected to be utilized for nano- and optoelectronic device applications. In order to fabricate high speed graphene transistors with low power consumption, the growth of insulating thin films with high dielectric constant (high-k) on graphene is essential. Atomic layer deposition (ALD) is one of the best deposition techniques to grow functional thin films, however, it is extremely challenging to grow high-k thin films on graphene by ALD because of the lack of surface functional groups (such as hydroxyl groups) on graphene. Here, we demonstrate that the graphene surface is fully covered by Al2O3 thin films (10–30 nm), with significantly reduced leakage current (decreased by a factor of ∼107), through simple surface treatment of the graphene in the ALD chamber prior to the deposition of the Al2O3 layer by ALD to provide surface nucleation sites on the graphene, without breaking vacuum and changi...

We used a negative-tone e-beam resist (N-ER) to perform direct laser writing lithography based on a single-photon absorption process with a 405-nm laser source. The linewidth of the N-ER reached 150 nm, which is over three times thinner than that of a conventional photoresist. To optimize the process, the linewidth, lithographic contrast, and aspect ratio of the N-ER were investigated with respect to the dose and baking temperature. We were able to achieve a lithographic contrast of 4.8 and a maximum aspect ratio of 1.43, thereby confirming the superior resolution of the N-ER.

We demonstrate the development of an effective technique to remove the poly methyl methacrylate (PMMA) layer used for transferring graphene synthesized by a chemical vapor deposition (CVD). This was achieved utilizing electron-beam bombardment and following developing processes, prior to the use of conventional organic solvents. Field-effect transistors were fabricated on the transferred graphene in order to explore their Dirac points and carrier motilities in the ambient condition - the results were then compared with those from the conventional wet chemical treatment. It was found that the Dirac points were located close to the zero gate bias when compared to those from the acetone and the acetic acid treatments. Most significantly, the field-effect mobility reached as high as 6770 cm2/Vs and 7350 cm2/Vs on average for holes and electrons, respectively, which is more than seven times improvement in comparison to conventional acetone treatments for CVD-grown graphene devices.

We demonstrate substrate electron-beam-induced current (s-EBIC) measurements of individual single-walled carbon nanotubes (SWNTs) by measuring the current collected by the substrate electrode, which penetrates through the insulating oxide layer. We found that s-EBIC provided better image contrast than ordinary secondary electron imaging methods for locating SWNTs that are in contact with metal electrodes. The s-EBIC has been measured for different acceleration voltages and probe currents. We found that s-EBIC did not depend critically on the acceleration voltage when the e-beam irradiated an insulating layer as compared to the case when it irradiated metal electrodes. Importantly, s-EBIC signals were increased by more than 10%, when the SWNT part was irradiated, and this makes s-EBIC imaging a very useful tool for locating individual SWNTs efficiently.

We used electrostatic force microscopy (EFM) to investigate local conducting states of atomically thin individual graphene oxide (GO) sheets and monitor the spatial evolution of their conducting properties during the reduction process. Because of the thinness of the GO sheets and finite carrier density, the electric field is partially screened in the reduced GO, which is manifested in the EFM phase signals. We found inhomogeneous oxidation states in as-prepared GO sheets and followed the evolution of reduction process in the individual GO sheets during both thermal and chemical reduction. We also compared the EFM measurement results with simultaneous IV characteristics to assess correlations between two measurements.

Graphene films with different nucleation densities were successfully grown on Cu foils using an atmospheric pressure chemical vapor deposition (APCVD) method. We investigated the effect of heating ramp rate on graphene growth, which is critical to the control of both the domain density and the defects density in further synthesized graphene film. Density of graphene domains was reduced with a decrease in ramp rate; heating Cu foil at a lower rate produced flat and smooth surface with larger Cu grains. These surface roughness and grain size-heating rate association were confirmed by atomic force microscope and electron backscatter diffraction analysis. By comparing micro Raman mappings of the graphene films grown with different ramp rates, we found that the number of layers, defect density, and uniformity of as-grown graphene films were strongly dependent on heating ramp rate. With these observations, we demonstrate the growth mechanism of graphene films as a function of the heating ramp rates.

In the past few years, perovskite film has been considered as a promising materials for solar cell devices due to its outstanding performance. To maximize the perovskite solar cell performance, it is necessary to understand the crystallization mechanism of perovskite film. In this study, we monitored the crystallization and decrystallization of the lead halide perovskite (MAPbI3-xClx) film under thermal annealing and UV-laser exposure processes by using in-situ terahertz time-domain spectroscopy. The strength of vibrational resonances in THz frequency range is found to be a good indicator of perovskite crystallinity. We measured the THz spectra as we annealed the perovskite film at various temperatures in order to achieve the degree of crystallization, i.e., the transition of perovskite structure from the intermediate phase to the tetragonal phase. In addition, we investigated the UV-laser-induced phase transition of the perovskite film. Because it is widely known that UV light illumination on perovskite film tends degrade the perovskite cell efficiency, its influence on the crystallization is our primary concern. Surprisingly, the crystallization phase increases for 10 min, until it starts to degrade over a couple of hours. We also studied the transient transport properties of the films under UV illumination. The correlation between the degree of crystallization (obtained from THz transmission) and the transport parameters exhibited the electric percolation threshold behaviors in the perovskite films. These information are expected to be crucial for optimizing the fabrication method of perovskite solar cell.

We fabricated plasmonic devices operating in the terahertz (THz) frequency range using silver nanowire (AgNW) network films. AgNW films exhibit high conductivity and good transparency in the visible range, with a figure of merit comparable to that of conventional transparent conducting oxide films. The THz conductivity of AgNW films can be improved by post-treatment procedures such as welding using graphene oxide flakes. Using photolithography, we fabricated the slot antenna arrays whose resonance behaviors are determined by geometric parameters such as the length of individual elements. The plasmonic resonance varied with the sheet resistances of the film, enabling us to manipulate the quality factors and the peak position of the resonance, in particular, by controlling the films thickness and by the post-procedures such as the chemical vapor treatment. (C) 2017 Optical Society of America

We report fully solution-processed fabrication of transparent conducting oxide-free counter electrodes (CEs) for dye-sensitized solar cells (DSSCs) by combining spray-coating of single-wall carbon nanotubes (SWCNTs) and chemical reduction of chloroplatinic acid precursor to platinum nanoparticles (Pt NPs) with formic acid. The power conversion efficiency of a semitransparent DSSC with such SWCNT-based CE loaded with Pt NPs is comparable to that of a control device with a conventional CE. Quantification of Pt loading shows that network morphology of entangled SWCNTs is efficient in forming and retaining chemically reduced Pt NPs. Moreover, electron microscopy and electrochemical impedance spectroscopy results show that mainly Pt NPs, which are tens of nanometers in diameter and reside at the surface of SWCNT CEs, contribute to electrocatalytic activity for triiodide reduction, to which we attribute strong correlation between power conversion efficiency of DSSCs and time constant deduced from equivalent-circuit analysis of impedance spectra.

We report the fabrication of efficient indium-tin-oxide-free organic solar cells based on poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM). All layers of the devices from the lowermost silver nanowire cathode to the uppermost conducting polymer anode are deposited from solution and processed at plastic-compatible temperatures

The electronic control of an ultrafast tunneling electron emission was demonstrated in the nanogap of a single-walled nanotube (SWNT) when irradiated by a femtosecond laser pulse. The SWNT apex possesses a nanoscale morphology with a large damage threshold and thus enabled the achievement of a large emission rate. More importantly, the DC field-emission characteristics varied when the gate bias was changed. This was analyzed in terms of the change in the effective barrier height and enhancement factors. Photoinduced electron emission was observed when the gap area was illuminated with a femtosecond laser centered at a wavelength of 800 nm. As the laser power was increased, a saturated tunneling current was observed, reaching more than 10 electrons per pulse. Finally, the photoelectron emission yield was tuned with the help of gate-induced variations in the electronic band structures of the SWNTs.The electronic control of an ultrafast tunneling electron emission was demonstrated in the nanogap of a single-walled nanotube (SWNT) when irradiated by a femtosecond laser pulse. The SWNT apex possesses a nanoscale morphology with a large damage threshold and thus enabled the achievement of a large emission rate. More importantly, the DC field-emission characteristics varied when the gate bias was changed. This was analyzed in terms of the change in the effective barrier height and enhancement factors. Photoinduced electron emission was observed when the gap area was illuminated with a femtosecond laser centered at a wavelength of 800 nm. As the laser power was increased, a saturated tunneling current was observed, reaching more than 10 electrons per pulse. Finally, the photoelectron emission yield was tuned with the help of gate-induced variations in the electronic band structures of the SWNTs.

We demonstrate the fabrication of plasmonic and metamaterials devices, operating in the terahertz frequency range, by using highly conductive, single-walled carbon nanotube (SWNT) network films. We fabricated various patterns on the SWNT films using photolithography or laser machining techniques, whose resonance behaviors are determined by geometric parameters such as the periodicity of the array patterns or the shape of the individual elements. The excellent mechanical properties of SWNT films enabled us to fabricate free-standing and highly flexible devices. More importantly, using postprocessings such as chemical treatments and nanoparticle coatings, we were able to engineer the dielectric constants of the SWNT films, such as enhancing or degrading the conductive properties. As a result of the postprocessings, the resonance peak of the plasmonic devices was suppressed or retrieved, which is not achievable in conventional metal films. In particular, we were able to control the metamaterials resonances, ...

We report the characterization of individual carbon nanotube and Si nanowire field-effect transistors through high-speed scanning photocurrent microscopy with a scanning speed of 1 frame/s and a photocurrent sensitivity of less than 1 pA. This enables us to record photocurrent images that are free from hysteresis effects that modify the field configurations applied by the gate bias voltage. We can clearly resolve the photocurrent signals with polarity inversion near the metallic contacts under gate bias conditions which cause severe hysteresis effects in the nanowire devices. We also studied the dynamics of the hysteresis effects for different gate bias configurations. This high-speed photocurrent imaging technique is particularly useful for obtaining two-dimensional, localized optoelectronic characteristics and their correlation with overall device performance without encountering undesired dynamic responses.

Graphene, functionalized with oleylamine (OA) and soluble in non-polar organic solvents, was produced on a large scale with a high yield by combining the Hummers process for graphite oxidation, an amine-coupling process to make OA-functionalized graphite oxide (OA-GO), and a novel reduction process using trioctylphosphine (TOP). TOP acts as both a reducing agent and an aggregation-prevention surfactant in the reduction of OA-GO in 1,2-dichlorobenzene (DCB). The reduction of OA-GO is confirmed by X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, X-ray diffraction, thermogravimetric analysis, and Raman spectroscopy. The exfoliation of GO, OA-GO, and OA-functionalized graphene (OA-G) is verified by atomic force microscopy. The conductivity of TOP-reduced OA-G, which is deduced from the current–voltage characteristics of a vacuum-filtered thin film, shows that the reduction of functionalized GO by TOP is as effective as the reduction of GO by hydrazine.

본 연구에서는 전도성이 매우 높은 탄소나노튜브 박막을 제작하고 테라파 영역에서의 광학상수를 측정하였다 . 탄소나노튜브박막은 스핀코팅법 또는 진공여과법을 이용하여 연성플라스틱 기판 위에 증착되었다. 테라파 영역의 전자파 투과율은 박막의 두께 조절을 통해 가능하며, 산처리 등의 후속공정을 통해서도 조절이 가능하다. 시분해 테라파 투과파의 진폭과 위상 측정을 통해유전상수를 포함한 광학상수의 스펙트럼을 측정하였다. 이를 통해 탄소나노튜브 박막이 Drude 자유전자 모델에 잘 부합하며, 높은 플라즈마 진동수를 가지는 등, 우수한 금속의 특성을 가지고 있음이 밝혀졌다 . 또한 산처리 전후 유전상수가 변화하는 것을 직접 확인할 수 있었다. 마지막으로 셀룰로즈 멤브레인에 증착된 CNT 필름의 경우엔 기판의 효과가 제거된 광학계수 측정이 가능함을 보여준다.

Nonlinear optical characteristics of single-walled carbon nanotubes (SWCNTs) dispersed in dichlorobenzene and imbedded in polymer were investigated at 800 nm using the time-resolved optical Kerr gate technique. For systematic study of the influence of SWCNT bundling on optical nonlinearities, SWCNT solutions with different concentrations and a series of SWCNT/polymer composites deposited on glass substrates with different concentrations and thicknesses were prepared. The nonlinear response was comparable to the pulse duration of the laser used (∼90 fs) both in SWCNT solutions and SWCNT/polymer composites. Over three orders of magnitude enhancement was observed in the third-order nonlinear susceptibility of SWCNT/polymer composite film compared with that of SWCNT solution. An appreciable reduction of microscopic and macroscopic nonlinearities was observed with increasing SWCNT concentrations due to stronger bundling of SWCNTs.

Vertically aligned ZnO nanorods have been grown on silicon substrates pre-coated with thin, less than 10 nm, textured ZnO seeding layers via a vapor-solid mechanism. The ZnO seeding layers, which were essential for vertical alignment of ZnO nanorods without using any metal catalyst, were prepared by decomposing zinc acetate. The structure and the luminescence properties of the ZnO nanorods synthesized onto ZnO seeding layers were investigated and their morphologies were compared with those of single-crystalline GaN substrates and silicon substrates covered with sputtered ZnO flms. Patterning of ZnO seed layers using photolithography allowed the fabrication of patterned ZnO-nanorod arrays.

We have reported the catalyst-assisted hot-filament chemical vapor deposition (HFCVD) of various carbon nanostructures, such as carbon nanotube (CNT), nanoparticle (CNP), and nanofiber (CNF), and their application examples. In the case of CNT, vertically aligned high-density growth has been investigated in detail using in-situ optical reflectivity measurement. For CNF showing large field-emission currents, adsorbate-related emission behavior and the emission from patterned cathodes have been studied. Regarding CNP, the performances of a series of triode field emitters with CNP cathodes have been compared, and the application of CNP triode to miniature time-of-flight mass spectrometer has been discussed.

We use scanning photocurrent microscopy (SPCM) to investigate the properties of internal p-n junctions in ambipolar carbon nanotube (CNT) transistors. Our SPCM images show strong signals near metal contacts whose polarity and positions change depending on the gate bias. SPCM images analyzed in conjunction with the overall conductance also indicate the existence and gate-dependent evolution of internal p-n junctions near contacts in the n-type operation regime. To determine the p-n junction position and the depletion width with a nanometer scale resolution, a Gaussian fit was used. We also measure the electric potential profile of partially suspended CNT devices at different gate biases, which shows that induced local fields can be imaged using the SPCM technique. Our experiment clearly demonstrates that SPCM is a valuable tool for imaging and optimizing electrical and optoelectronic properties of CNT based devices.

In this paper, we demonstrate the fabrication of liquid flow sensors employing partially suspended single-walled carbon nanotubes (SWNTs). We have found that the sign of the conductance change in SWNT flow sensors is not influenced by the direction of water flow for both supported and suspended devices. Therefore, the streaming potential is not the principal mechanism of the SWNT sensor response. Instead, the conductance change is more likely due to a reduction in the cation density in the electrical double layer, whose equilibrium conditions are determined by the liquid flow rate. More importantly, we have found that the sensitivity of suspended SWNT devices is more than 10 times greater than that of supported SWNT devices. A reduced screening effect and an increase in effective sensing volume are responsible for the enhanced sensitivity, which is consistent with the ion depletion model. We also have measured conductance as a function of gate bias at different flow rates and have determined the flow-rate dependent effective charge density, which influences the electrostatic configuration around SWNT devices.

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene–light interaction., Active control of light in optical fibres is of great interest, to this end, electric control of all-fibre graphene devices is desirable but highly challenging. Here, Lee et al. demonstrate electric control of the optical properties of a graphene sheet deposited on a side-polished fibre mediated by an ion liquid.

Frequency mixing (2v1 2 v2) is demonstrated in femtosecond nondegenerate four-wave mixing (FWM) on GaAs multiple quantum wells using two synchronized, independently tunable lasers. The frequency mixing component in the spectrally resolved FWM coexists with the exciton resonance, and it dominates over the exciton component at high intensity and high detuning. This off-resonant component is present only for delays smaller than the temporal pulse width, whereas the resonant exciton component survives for longer delays. [S0031-9007(99)09078-X]

Femtosecond four-wave mixing experiments on GaAs/AlGaAs quantum wells are performed with two independently tunable lasers. Many new results are found, including the heavy-hole-light-hole beating with these two mutually incoherent lasers.

We performed time-domain terahertz (THz) spectroscopy on reduced graphene oxide (rGO) network films coated on quartz substrates from dispersion solutions by spraying method. The rGO network films demonstrate high conductivity of about 900 S/cm in the THz frequency range after a high temperature reduction process. The frequency-dependent conductivities and the refractive indexes of the rGO films have been obtained and analyzed with respect to the Drude free-electron model, which is characterized by large scattering rate. Finally, we demonstrate that the THz conductivities can be manipulated by controlling the reduction process, which correlates well with the DC conductivity above the percolation limit. (C) 2013 Optical Society of America

We explored single-layer graphene and graphene field-effect transistors immersed in nitric acid using in-situ Raman spectroscopy. Two distinct stages were observed in the chemical doping process. The first stage involved blue shifts of the G and 2D peaks, whose saturation occurred rapidly with a time constant in the range of 10–25 s depending on the molar concentration of the acid. In the second stage, the intensity of the D peak, which was associated with structural defect formation, increased for a relatively long period of time. Since the major doping effects appeared during the first stage, the optimal doping conditions under which no noticeable structural defect formation occurred can be determined by monitoring the frequency shift. Transient doping concentrations along with structural defect densities were obtained from the Raman peak positions and intensities. We found that the doping-induced shift in the Dirac point in graphene field-effect transistors exhibited a fast response with respect to fre...

Passive mode-locking of a Ti:sapphire laser employing monolayer graphene as saturable absorber was demonstrated for the first time. The large-area, high-quality monolayer graphene was fabricated by chemical vapor deposition method. Without any additional treatment, monolayer graphene shows ultrafast recovery time and nonlinear absorption properties appropriate for the bulk laser mode-locking near 800 nm. The graphene mode-locked Ti:sapphire laser delivers 63-fs pulses with a maximum output power of 480 mW.

We demonstrate enhanced terahertz wave transmission through carbon nanotube films with subwavelength apertures. The peak frequency of the transmitted waves matches well with the shape resonance, mainly determined by the length of the apertures and the refractive index of surrounding media.

We performed time-domain terahertz (THz) spectroscopy on single-walled carbon nanotube films. We found that a filtration method provides an efficient way of fabricating thick nanotube films which is capable of effective shielding of THz waves. Shielding effectiveness of more than 40 has been achieved from our method. In addition, all of the films we fabricated demonstrate a good metallic behavior with a dispersion of optical constant relevant to simple Drude model.

Novel transmission- and reflection-type ultrafast saturable absorbers were developed based on single-walled carbon nanotubes (SWCNTs). Their nonlinear optical characteristics, crucial for mode-locking, such as modulation depth, saturation fluence and recovery time were studied. Additionally, we demonstrated passive mode-locking of different bulk solid-state lasers operating above 1 μm using these SWCNT-SAs and achieved stable femtosecond pulses without q-switching instabilities.

The apparent field-effect-transistor (FET)-like operations of a device based on a network of single-walled carbon nanotubes (SWCNTs) are elucidated with the help of local probe electrical characterization methods using an atomic force microscope. The apparent switching behavior of the device with an on-off ratio10(4) is found to be due to just two localized areas in the network of SWCNTs based on the measurements by electrostatic force microscopy and scanning gate microscopy. The result demonstrates that the conductance of a network of SWCNTs can be dominated by localized perturbations.

Unlike in linear nanostructures, photocurrent generated in single-layer graphene (SLG) is expected to display two-dimensional characteristics. This allows the investigation of carrier dynamics, in relation to several spatially varying factors (such as the location of photocurrent generation and collection) and the overall electron band configuration of the SLG. In this letter, we use scanning photocurrent microscopy to investigate the spatial mapping of photocurrent generation and collection in SLG in a multielectrode geometry. A strong electric field near metal-graphene contacts leads to efficient photocurrent generation, resulting in >30% efficiency for electron-hole separation. The polarity and magnitude of contact photocurrent are used to study the band alignment and graphene electrical potential near contacts, from which it is shown that there exist large-scale spatial variations in graphene electric potential. Our measurements with a multielectrode device configuration reveal that photocurrent is distributed with a clear directional dependence among different collector electrodes. In the same measurement scheme, we also determine the majority carrier in graphene under different gate conditions by imaging the thermocurrent generated by laser-induced heating of electrodes.

We demonstrate fabrication of single-walled carbon nanotube films with good metallic properties and a Drude-like dispersion. Using the films with subwavelength hole arrays, we obtain enhanced terahertz transmission which is assisted by shape resonance.