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The active elements based on dynamic transistor negatrons (circuits with negative active differential resistance) are introduced. The principles of dynamic transistor negatrons simulation has been developed on the basis of non-linear charge model. Parameters, which characterize non-linear mode of dynamic transistor negatrons, are derived. Nonlinear equivalent circuit and Volterra series are used to calculate parameters of negatrons. Particular attention is devoted to the frequency mixers and frequency switches. An experimental frequency mixer has been described, that has confirms the theoretical predictions.

The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the basis of non-linear charge model. The equivalent circuit and Volterra series were used for the calculation of dynamic negatrons' parameters. The expressions were obtained, which give the linear relation between current and voltage charges and allow calculating the transferring characteristics. Experimental oscillators are described, which confirm the theoretical predictions.