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The poor thermal stability of current commercial white light emitting diodes (WLED) fabricated using a blue chip, a yellow YAG:Ce 3+ phosphor (YAG) and resins, restricts their application in fields where long service time and high power lighting systems are required. Incorporating YAG into glass offers a possible way to resolve the problem by removing the organic resins in LED encapsulation. In the present study, YAG glass-ceramics with bismuth borate glass matrices were prepared using a rapid melt quenching technique. The YAG erosion mechanism was investigated for the first time in various glass matrix compositions at different co-sintering temperatures. The results demonstrate that neither B 2 O 3 nor Bi 2 O 3 individually erodes YAG particles, but the mixtures of B 2 O 3 and Bi 2 O 3 binary glass systems react with YAG and dissolve it almost completely or generate YAl 3 (BO 3 ) 4 (abbreviated as YAB), and they even erode as-produced YAB again under certain conditions. The production of YAB particles increases with the increase of the n Bi /n B ratio at a lower temperature (680 °C), while it first increases and then decreases at a higher temperature (800 °C). The maximum production of YAB can be obtained at the co-sintering temperature of 680 °C with an n Bi /n B ratio of 55:45 or at 760 °C with an n Bi /n B ratio of 35:65. The intermediate Bi 4 B 2 O 9 phase is found during the transformation of YAG into YAB. A simple but efficient approach is proposed to prevent YAG erosion and increase the luminous properties of YAG glass ceramics to a great extent by simply adding Ca 2+ into bismuth borate glass matrices. The degree of YAG erosion decreases with increasing Ca 2+ concentration until an impurity phase appears when the Ca 2+ concentration exceeds 20 mol%. The combination of good white light emission and suitable quantum efficiency as well as higher thermal stability makes the as-prepared YAG glass-ceramics equipped with a blue chip a possible alternative to commercial WLED. [ABSTRACT FROM AUTHOR]

Cr3+‐activated near‐infrared (NIR) phosphors have gained extensive attention for use in NIR phosphor‐converted light‐emitting diodes (pc‐LEDs), which are required for smart NIR spectroscopy techniques. Nevertheless, obtaining broadband NIR‐emitting phosphors with outstanding thermal stabilities and photoluminescence (PL) efficiencies remains a significant challenge. Herein, considering NaSr2XGe5O14 (X = Al, Ga, Sc, and In) as hosts, which possess a large band gap and multiple sites for the substitution of Cr3+ ions. NaSr2XGe5O14:Cr3+ phosphors are successfully prepared using a solid‐state reaction technology. Upon blue light excitation, the phosphors cover a broad NIR emission band in 650–1100 nm region. Notably, an abnormal blueshift and PL enhancement are observed following the substitution of Al/Ga with Sc/In. In particular, the PL internal quantum efficiency is improved from 34.5% (NaSr2GaGe5O14: Cr3+) to 87.5% (NaSr2ScGe5O14: Cr3+). Moreover, the manufactured NIR pc‐LED exhibited an exceptional photoelectric efficiency of 17.7% with an NIR output power of 10.2 mW at 20 mA, and its potential application in nondestructive detection is demonstrated. [ABSTRACT FROM AUTHOR]

Sunlight-like full-spectrum phosphor-converted light-emitting diodes (pc-LEDs) require near-infrared (NIR) emission bands to fill the spectrum gap and consequently propel their widespread applications. Although fluoride NIR phosphors have been increasingly investigated, balancing high quantum efficiency (QE), high thermal stability, and wideband NIR emission to obtain excellent overall performance in a single system is still a challenge for Cr3+-doped fluoride NIR phosphor and is significant for direct utilization. Herein, a high-efficiency and thermally stable broadband NIR emission was realized in a novel LiSrGaF6:Cr3+ fluoride phosphor benefitting from a relatively weak crystal field and electron–phonon coupling effect. Upon blue light excitation, the ultra-broad NIR luminescence ranging from 650 to 1150 nm can be achieved with an FWHM of 149 nm peaking at ∼813 nm. Furthermore, this system possesses a high QE of up to 76.88% and its emission intensity at 423 K still maintains 61.62% of its initial intensity at room temperature. An NIR output power of 42.82 mW and photoelectric conversion efficiency of 14.27% of NIR pc-LED devices have also been presented based on this NIR phosphor, demonstrating its possible application in compact nonvisible light sources. In addition, a highly continuous sunlight-like vis-NIR pc-LED was further constructed by employing a blue chip with commercial cyan (BaSi2O2N2:Eu2+), yellow (Y3Al5O12:Ce3+), red (CaAlSiN3:Eu2+), and this LiSrGaF6:Cr3+ NIR phosphor. The as-obtained pc-LED exhibits an ultra-broad spectrum ranging from 400 nm to 1000 nm, exhibiting a higher color reproduction with a color rendering index (CRI) of 95.1 and luminous efficiency (LE) of 50.22 lm W−1. These results indicate that LiSrGaF6:Cr3+ phosphor can be a promising NIR phosphor candidate for high-quality sunlight-like full-spectrum lighting and infrared night vision technology. [ABSTRACT FROM AUTHOR]

Current white light emitting diodes (WLEDs) have poor thermal stability and lack red‐light, which restrict their applications in high‐power and high‐color‐rendering‐index solid‐state lighting. YAG glass‐ceramics provide an efficient way to resolve these problems. Herein, novel YAG‐embedded calcium bismuth borate glass‐ceramics (YAG‐GCs) with Eu3+ doping were prepared using a rapid melt quenching technique. The precursor glass exhibits superior YAG refractive index matching and high transmittance. Differential scanning calorimeter simulations verify YAG particles react with the precursor glass. The degree of YAG erosion is slight but monotonously increases with the co‐sintering temperature from 640 to 700°C. The erosion products probably contain YAB (Al3Y(BO3)4), Al3Eu(BO3)4, Bi24B2O39, and Ca12Al14O33 phases, and the Bi ion valence state is maintained during the reaction process. The energy transfer from Ce3+ to Eu3+ is suppressed. The YAG‐GC PL intensities monotonously increase as the co‐sintering temperature decrease from 640 to 700°C and the YAG content increase from 2.5 to 7 wt.%. The optical parameters of a WLEDs packed by YAG‐GCs and blue chips are a luminous efficiency of 105.3 lm/W, correlated color temperature of 3940 K and color rendering index of 70.1. The as‐prepared YAG‐GCs are promising candidates for high‐power, warm WLEDs due to their superior thermal stability, high quantum efficiency, and low cost. [ABSTRACT FROM AUTHOR]

BaLu 1.94 Al 4 SiO 12 :0.06Ce 3+ (BLASO:0.06Ce 3+ ) green-emitting phosphor could be easily obtained by a conventional solid-state reaction method at 1400 °C. BLASO:0.06Ce 3+ possesses the garnet structure ( Ia 3 ̅ d space group) with the lattice parameter a = 11.9222(0) Å. The emission peak of BLASO:0.06Ce 3+ is located at 513 nm and its photoluminescent quantum yield is determined to be 92.4% at 25 °C when excited at 450 nm. BLASO:0.06Ce 3+ presents excellent thermal properties, with the photoluminescence intensity at 200 °C only decreased to 91.5% of its room temperature value. A phosphor-converted white LED device fabricated by using BLASO:0.06Ce 3+ as the green phosphor exhibits good optical performance with Ra = 88.5, CCT = 3562 K and CIE1931 chromaticity coordinates as (x = 0.4041, y = 0.3951). The results indicate that BLASO:0.06Ce 3+ phosphor has strong potential applications in developing high color rendering, thermally stable, warm-white LEDs. [ABSTRACT FROM AUTHOR]

Phosphor-converted light-emitting diodes (pc-LEDs) have important applications in security surveillance and food testing. However, developing new broadband near-infrared phosphors remains an important issue. Herein, the high-temperature solid-state reaction method was applied to synthesize a new type of Cr3+ doped Mg2Al4Si5O18 broadband NIR phosphor which matches a blue LED chip. It exhibits a broadband near-infrared (NIR) phosphor emission with a focus of 856 nm and a full width at half maximum >200 nm after excitation at 453 nm. The optimum concentration of Cr3+ was established to contain 2 mol%. At 398 K, the luminescence intensity is 45.2% of that at 298 K. The power output of NIR pc-LEDs fabricated by incorporating a 450 nm chip and the Mg2Al4Si5O18:0.02 Cr3+ phosphor is 19.69 mW at 300 mA current. Finally, the developed NIR pc-LED shows significant potential for use in night-vision imaging. [ABSTRACT FROM AUTHOR]

• A novel red phosphor Ca 9 Nd(PO 4) 7 :Eu3+ was synthesized for the first time. • The occupation and crystalline structure of Ca 9 Nd(PO 4) 7 :xEu3+phosphors were thoroughly determined by DFF simulation and Rietveld refinement. • This phosphor can be efficiently excited by near-ultraviolet light to present intense red light emission. • The phosphor exhibits good property of thermal stability. • The WLED fabricated with Ca 9 Nd(PO 4) 7 :xEu3+ has shown superb color temperature and color purity. A series of Ca 9 Nd(PO 4) 7 :xEu3+ (abbreviates as CNP:xEu3+, where x varies from 0.1 to 0.5) phosphors were prepared via conventional solid-state reaction. The X-ray diffraction (XRD) data and Rietveld refinement suggested a successful preparation of CNP:xEu3+ with no sign of impurities. The structure of CNP:Eu3+ belongs to a trigonal crystal system the same as that of β-Ca 3 (PO 4) 2. Thus, Eu3+ ions should theoretically occupy the Ca sites in CNP. All CNP:xEu3+ phosphors showed red emission under excitation in the near-ultraviolet (n-UV) range. The optimal dosage with the best luminescent performance was found at x = 0.3 with critical interaction radius (Rc) of 15.57 Å. The electric dipole-dipole interaction was suggested to be the reason that leads to concentration quenching. The relative luminous intensity of CNP:0.3Eu3+ phosphor at 373 K can remain 70.4% of the initial value at room temperature (RT). The color purity of CNP:0.3Eu3+ phosphor is 92.8%, which is much higher than many other red phosphors. A white light emitting diode (WLED) fabricated with CNP:Eu3+ exhibited correlated color temperature (CCT) of 4602 K and a high Ra of 74.7. The above results illustrate that Ca 9 Nd(PO 4) 7 :Eu3+ could serve as a promising red phosphor for n-UV WLEDs. [Display omitted] [ABSTRACT FROM AUTHOR]

Near-infrared (NIR) phosphor-converted light emitting diode (pc-LED) light sources have broad application prospects in environmental science, biomedical and plant growth fields. However, NIR phosphors still suffer from narrowband emission and low thermal stability. Here, we prepared a novel Lu2CaMg2−xSi3O12:xCr3+ (LCMS:xCr3+, x = 0.005–0.06) phosphor with broadband emission by a high-temperature solid state reaction. Under excitation at 450 nm, the emission spectrum of the LCMS:0.05Cr3+ phosphor shows a broadband emission in the range of 650–1000 nm with a large full width at half maximum (FWHM) of 125 nm and an R-line emission of 692 nm. In addition, the LCMS:0.05Cr3+ phosphor has good thermal stability and can maintain 70% emission intensity at 150 °C relative to that at room temperature. The LCMS:0.05Cr3+ phosphor exhibits a high internal quantum efficiency (IQE) of ∼76%. Using this phosphor, a NIR pc-LED with photoelectric efficiencies of 14.8% at 100 mA and 6.0% at 320 mA and NIR output powers of 59.5 mW at 100 mA and 181.0 mW at 320 mA was obtained. The broadband LCMS:0.05Cr3+ phosphor with a NIR emission peaked at 750 nm can serve as a light source for plant cultivation and has superior application prospects in the agriculture field. [ABSTRACT FROM AUTHOR]

Fluoride phosphors as red components for warm white LEDs have attracted a tremendous amount of research attention. But these phosphors are extremely sensitive to moisture, which seriously limits their practical industrial applications. To tackle this problem, unlike all the straightforward preventive strategies, a reverse strategy "Good comes from bad" was successfully developed to treat the degraded K2SiF6 : Mn4+ (D‐KSFM) phosphor in the present study, which not only completely restores the luminescence properties, but also significantly enhances the moisture resistance at the same time. After treatment with an oxalic acid solution as restoration modifier, the emission intensity of the D‐KSFM phosphor can be restored to 103.7% of the original K2SiF6 : Mn4+ red phosphor (O‐KSFM), and the moisture resistance is remarkably improved. The restored K2SiF6 : Mn4+ (R‐KSFM) maintains approximately 62.3% of its initial relative emission intensity after immersing in deionized water for 300 min, while the reference commercial K2SiF6 : Mn4+ with a protective coating (C‐KSFM) is only 33.2%. As a proof of general applicability, this strategy was also conducted to K2TiF6 : Mn4+ phosphor, which is less moisture‐stable than K2SiF6 : Mn4+. The luminescence intensity of the degraded K2TiF6 : Mn4+ (D‐KTFM) phosphor can be restored to 162.6% of original level of the K2TiF6 : Mn4+ synthesized through a cation exchange approach without any treatment (O‐KTFM). The emission intensity of the restored K2TiF6 : Mn4+ (R‐KTFM) phosphor retains 62.8% of its initial emission intensity after soaking in deionized water for 300 min. Finally, the R‐KSFM phosphors were packaged into white light‐emitting diodes with blue InGaN chips and Y3Al5O12 : Ce3+ yellow phosphors. The WLEDs display excellent color rendition with higher color rendering index, lower color temperature (WLED‐II: Ra=83.6, R9=57.3, 3743 K, ηl=199.68 lm/W; WLED‐III: Ra=90.4, R9=94.2, 2892 K, ηl=183.3 1 m/W). The above results show that the reverse strategy can be applied in those phosphor materials with poor moisture resistance to restore luminescence properties and improve moisture resistance without excessively care about the deterioration during the production, storage and transportation. [ABSTRACT FROM AUTHOR]

The addition of a red-emitting phosphor to YAG:Ce3+-based white light-emitting diodes (WLEDs) greatly facilitates their applications in the field of high-color-rendering-index warm solid-state lighting. It is highly desirable to develop a red phosphor with satisfactory spectral features and low synthesis cost. In this study, a novel non-rare-earth and nonequivalent doping type of Cs2NbOF5:Mn4+ oxyfluoride red-emitting phosphor with high luminous efficiency was obtained via a facile room-temperature co-precipitation method, and its morphology and luminescent properties were investigated in detail. The Cs2NbOF5:Mn4+ phosphor with micro-rod-like morphology exhibited broad band absorption at blue light region (∼474 nm) and narrow bandwidth emissions at red region (∼633 nm). The color purity of the Cs2NbOF5:Mn4+ phosphor was calculated to be about 99%, and the internal quantum yield (QY) under 474 nm excitation was 63.4%. The concentration quenching of Mn4+ in Cs2NbOF5 matrix was mainly due to dipole–dipole interactions, and the activation energy of temperature quenching was calculated to be ∼0.2610 eV. The demonstration of a blue InGaN LED chip in combination with a blend of newly developed Cs2NbOF5:Mn4+ red phosphor and YAG:Ce3+ yellow phosphor greatly decreased the correlated color temperature (CCT) from 6255 to 3517 K while significantly improving the color rendering index (CRI) from 72.5 to 87.5. It deserves to be mentioned that the brand-new matrix to phosphor in the present study can be extended to various niobium/tantalum oxyfluoride series, which is very helpful for developing and designing new red phosphors. [ABSTRACT FROM AUTHOR]

Abstract Lack of red-light of current w-LEDs restricts their applications in the field of high color rendering index warm solid-state lighting. Fluoride phosphors doped with Mn4+ provide an efficient way to resolve the problem. Unfortunately, these excellent Mn4+ activated fluoride red phosphors are generally synthesized in highly toxic HF solution. In this paper, we report a novel green synthetic route to prepare a non-rare-earth and nonequivalent doping type of K 2 NbF 7 :Mn4+ red phosphor with micro-rod-like morphology. The results of XRD and its Rietveld refinement reveal that all the samples possessed only a single phase with monoclinic P21/c structure and the Mn4+ ions were successfully incorporated into the crystal lattice. The Mn4+ ions in K 2 NbF 7 matrix have a highly distorted octahedral environment, which strengthen the intensity of zero phonon line (ZPL). The strongest absorption and excitation bands appear in blue region of diffuse refection spectra (DRS) and the photoluminescence excitation (PLE) of K 2 NbF 7 :Mn4+ sample, which demonstrates the product perfectly match with the most popular GaN-based blue chip. Under blue light illumination, the as-prepared K 2 NbF 7 :Mn4+ sample exhibits intense sharp-line red fluorescence (∼628 nm) with internal quantum yield (QY) of 71.3%, an extreme narrow full width at half-maximum (FWHM) of ∼2.8 nm, and an ultra-high-color purity of 99.2%. Impressively, by incorporating K 2 NbF 7 :Mn4+ as a red component, a warm w-LED with high CRI of 83.8, low color temperature of 3010 K and high luminous efficiency of 115.91 lm/W is obtained, demonstrating great validity of K 2 NbF 7 :Mn4+ red phosphor for white LED devices. Highlights • The K 2 NbF 7 :Mn4+ red phosphor with high luminous efficiency was obtained successfully via a novel HF-free approach. • Reaction mechanism of K 2 NbF 7 :Mn4+ red phosphor, including incorporation mode of Mn4+ into K 2 NbF 7 host, were investigated carefully. • Optical properties of K 2 NbF 7 :Mn4+ red phosphor, especially the intense ZPL emission, were investigated carefully. • Addition of K 2 NbF 7 :Mn4+ red phosphor, a warm w-LED with high CRIand low color temperature is obtained. [ABSTRACT FROM AUTHOR]

• A novel thiourea loading strategy was proposed to modify KSF phosphor. • The excellent water resistance was obtained after thiourea treatment. • The degradation and restore mechanisms of T-KSF phosphor was revealed. Recently, Mn4+ doped fluoride phosphors have been considered as ideal candidate materials employed in white light-emitting diodes (WLEDs). However, the extremely serious performance deterioration in a wet environment has affected their practical commercial applications. Herein, we developed a novel thiourea loading strategy for greatly improving the moisture resistance of typical K 2 SiF 6 : Mn4+ (KSF) red phosphors through treated by thiourea ethanol solution evaporation. The luminescent properties and moisture resistance have been discussed in detail, and the underlying moisture resistance mechanism was further proposed. The results show that the moisture resistance of KSF phosphor treated by thiourea significantly increased approximately sevenfold than that of untreated counterpart, exhibiting a potential application in the WLEDs backlight with high gamut display. These works brings up a promising alternative strategy for enhancing moisture resistance and provides a deeper understanding on the performance degradation mechanism for a variety of Mn4+ doped fluoride phosphors system. [Display omitted] [ABSTRACT FROM AUTHOR]

Near-infrared phosphor-converted light emitting diodes (NIR pc-LEDs) is developing rapidly in plant cultivation because of its low cost, compact size and high efficiency. The NIR light of 700 ∼ 760 nm is known to be beneficial for seed germination and growth. Therefore, the exploration of NIR phosphors with specific wavelength and high efficiency is essential for the development of high-performance plant cultivation pc-LEDs. In this study, a highly efficient and thermal stable Cr3+ doped Lu 2 CaAl 4 SiO 12 (LCAS) phosphor with broadband NIR emission covering phytochrome P fr absorption range was successfully realized via Ca2+-Si4+ co-substitution of Lu3+-Al3+ pairs. The LCAS:0.07 Cr3+ exhibits a major emission peak of 740 nm with a FWHM of 160 nm and its internal/external quantum yield (IQY/EQY) is as high as 80%/30.5%. The integrated emission intensity of LCAS:0.07Cr3+ at 423 K lost only 33.8% of its initial intensity, indicating that it has a good thermal stability. When the LCAS:0.07Cr3+ was packaged into a pc-LED with a driving current of 320 mA, the device output power and photoelectric efficiency reached 90.6 mW and 8.6%, respectively, demonstrating that this phosphor has potential application in plant cultivation lighting. • A NIR phosphor LCAS: Cr3+ was successfully prepared. • The emission spectrum of LCAS: Cr3+ fits well with the absorption band of P fr. • The NIR phosphor exhibits relatively high IQE/EQE. [ABSTRACT FROM AUTHOR]

• A brand-new blue-emitting phosphor NaSrScSi 2 O 7 :Eu2+ was prepared. • NaSrScSi 2 O 7 :0.03Eu2+phosphor possesses a high absorption efficiency of 84.35%. • The blue phosphor allows the WLED-2 spectrum to cover more short-wavelength region. A high absorption efficiency blue-emitting phosphor NaSrScSi 2 O 7 :Eu2+ for near-UV-pumped white light-emitting diodes [Display omitted] The Eu2+ ion is extensively used as an activator due to its wide excitation band and high efficiency emission spectrum. However, most Eu2+-activated blue-emitting phosphors have low absorption efficiency in the near-ultraviolet (n-UV) region or lack the short-wavelength blue light emission (<450 nm), resulting in UV light leakage or poor color rendering. Herein, we have successfully prepared a brand-new blue phosphor NaSrScSi 2 O 7 : Eu2+ by solid-state reaction method. The Rietveld refinement of the powder diffraction data, luminescent properties, decay lifetime, quantum efficiencyand thermal quenching have been investigated in detail. Under 345 nm excitation, the NaSrScSi 2 O 7 : 0.03Eu2+phosphor manifests an asymmetric emission spectrum centered at 427 nm, and notably, shows a high absorption efficiency of 84.35%. Finally, we encapsulated two white light-emitting diodes (WLEDs) devices using as-prepared blue-emitting phosphor and three commercial phosphors. At 80 mA drive current, both packaged devices demonstrate warm white light. Meanwhile, the WLED-2 with NaSrScSi 2 O 7 : 0.03Eu2+ blue-emitting phosphor has a lower correlated color temperature of 3726 K, its spectrum complements more short-wavelength spectrum, and the special color rendering index R 6 and R 7 increased from 95.2, 94.5 to 98.3, 96.5, respectively, compared with WLED-1 without present phosphor. These results demonstrate that NaSrScSi 2 O 7 : Eu2+ blue-emitting phosphor is a prospective novel luminescent material for WLEDs. [ABSTRACT FROM AUTHOR]

Mn4+-activated (oxy)fluoride-based red phosphors have received extensive attention. In this work, a phase transformation from K 2 NbF 7 to K 3 HF 2 NbOF 5 was successfully achieved by stoichiometric control during coprecipitation process, resulting in a novel red phosphor K 3 HF 2 NbOF 5 :Mn4+ with narrow-band emission. A systematic study was carried out on its crystal structure and luminescent properties. By introducing O ions into the local coordinated structure, the emission intensity of K 3 HF 2 NbOF 5 :Mn4+ phosphors is 2.15 times as high as that of K 2 NbF 7 :Mn4+ with a photoluminescence internal quantum yield (IQE) of 73.28% and absorption efficiency (AE) of 49.68%, which could be attributed to the layered structure of the oxyfluoride host. High quenching concentration of 8.39 mol% and short decay lifetime of 4.19 ms are realized. Based on K 3 HF 2 NbOF 5 :Mn4+ and commercial YAG:Ce3+, a white light-emitting diode (WLED) for solid state lighting was fabricated, which has low CCT of 3802 K, high Ra of 86.3 and high luminous efficiency (LE) of 126.23 lm/W. Moreover, by employing commercial β-sialon:Eu2+ and K 3 HF 2 NbOF 5 :8.39%Mn4+, another WLED with high LE of 95.78 lm/W and wide color gamut of 108.6% National Television Standard Committee (NTSC) standard for backlight lighting was packaged, indicating a great potential of K 3 HF 2 NbOF 5 :Mn4+ as a red component in the application of backlight lighting. • Phase transformation from K 2 NbF 7 to K 3 HF 2 NbOF 5 was achieved by stoichiometric control. • Accompanying with fluoride to oxyfluoride phase transformation, the fluorescence intensity was greatly enhanced. • High photoluminescence quantum yield, wide color gamut and short fluorescence lifetime suit backlight applications. [ABSTRACT FROM AUTHOR]

• A cyan emission was achieved via the replacement of Si-N with Al-O in Ba 3 Si 6 O 12 N 2 :0.05Eu2+. • The emission peak could be shifted from 512 nm to 495 nm. • The emission intensity of the optimal cyan phosphor is 36% higher than Ba 3 Si 6 O 12 N 2 :0.05Eu2+. • The CCT of wLED decreases from 4407 K to 4038 K and the Ra increase from 85.8 to 90.8. Developing cyan phosphors excited by near ultraviolet (n-UV) or blue LED chips is extremely significant for making up for the cyan cavity of the existing white light emitting diodes (wLEDs). In this research, a cyan emission was successfully achieved via the replacement of Si-N with Al-O in Ba 2.85 Si 6 O 12 N 2 :0.15Eu2+ green phosphor. The emission peak could be shifted from 512 nm to 495 nm. The mechanism of spectral blue shift can be interpreted by the decrease of the crystal field splitting strength, which is induced by the square of the bond length and the decrease of centroid shift of 5d level, which is induced by the spectroscopic polarizability and 6th power of the bond length. The optimal cyan Ba 2.85 Si 5.65 Al 0.35 O 12.35 N 1.65 :0.15Eu2+ phosphor possess a broad excitation and emission band at the same time, whose emission intensity is 36% higher than that of Ba 2.85 Si 6 O 12 N 2 :0.15Eu2+. The CCT of the wLED with Ba 2.85 Si 5.65 Al 0.35 O 12.35 N 1.65 :0.15Eu2+ phosphor realizes from 4407 K to 4038 K and the Ra values achieve from 85.8 to 90.8. The results indicate that Ba 2.85 Si 6- y Al y O 12+ y N 2- y :0.15Eu2+ phosphor can serve as a cyan component for application in full-spectrum warm white lighting. [ABSTRACT FROM AUTHOR]

La 3 Si 6 N 11 :Ce3+ (LSN:Ce3+) phosphor has attracted widespread attention in the field of high-power white light-emitting diodes as it can be effectively excited by blue LED chip and exhibits excellent thermal quenching. To improve the emission intensity is always the critical objective of La 3 Si 6 N 11 :Ce3+. In this paper, the strategy by combining CeO 2 and CeN as cerium sources of the activator was developed to enhance the emission intensity. The emission intensity of NO-LSN:Ce3+ is 112.8% of that of N-LSN:Ce3+, which benefits from the enhancement of the concentration of Ce3+ ions. Generally, more Ce4+ ions can enter into the lattice of La 3 Si 6 N 11 at high concentration due to the smaller ionic radius of Ce4+ than Ce3+. After that, Ce4+ ions can be effectively reduced to Ce3+ ions at high temperature. The luminescence improvement mechanism of as-prepared phosphors was analyzed. This research provides an effective method for improving the emission intensity of nitride or oxy-nitride phosphors. • The effects of CeO2 and CeN co-doping on emission intensity of LSN phosphor was first studied. • The mechanism of CeO2 and CeN co-doping LSN on emission intensity was analyzed. • This study provides a strategy for improving the emission intensity of LSN:Ce3+. [ABSTRACT FROM AUTHOR]