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Future displays need to be stretchable, bendable, and wearable to match consumers' needs for convenience, portable equipment, and real‐time information display. The development of flexible light source components, like flexible light‐emitting diodes (LEDs), is urgently required to fulfill these needs. Metal halide perovskites, known for their excellent optoelectronic properties and ductility, are considered the most promising light‐emitting materials for high‐definition displays, and their outstanding advantage is that the metal halide perovskites would be achieved by solution process under low temperature (<150 °C), which is especially good for the flexible organic substrates to maintain high conductivity during fabrication of flexible LEDs. In recent years, flexible perovskite LEDs have made significant progress, but still face a great deal of difficulties, obstacles, and great challenges. Herein, the mechanical properties of perovskite materials are examined and the failures for perovskite‐based flexible optoelectronic devices under strain are discussed. The authors then focus on optimizing each functional layer and the recent advancement in flexible perovskite LEDs is summarized. Finally, a brief outlook on the challenges faced by flexible perovskite LEDs and their possible future development is provided. [ABSTRACT FROM AUTHOR]

Here, ceramic‐like CsPbBr3@SiO2 nanocrystals (NCs) with a high photoluminescence quantum yield of 98.7%, green purity of 90%, and narrow full width at half maximum of 22 nm are successfully achieved by a solid‐phase reaction process. The SiO2 shell covers the surface of the NCs, providing long‐term working and excellent thermal cycling stability. Ba2+ dopes the lattice of the perovskite structure under high‐temperature sintering at 700 °C, resulting in the red‐shift of the NCs emission due to the decrease of the bandgap caused by the lattice modulation with Ba2+. At the same time, the halogen vacancies are effectively passivated by a halogen‐rich environment of dopants (BaBr2). The Commission Internationale de l'Eclairage of the doped ceramic‐like NCs is (0.170, 0.760), which approaches the Rec.2020 standard. By means of this solid reaction process, red, green, and blue ceramic‐like perovskite NCs are prepared to achieve white light‐emitting diodes, covering 124% of the National Television Standards Committee. [ABSTRACT FROM AUTHOR]

The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development. [ABSTRACT FROM AUTHOR]

We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices. [ABSTRACT FROM AUTHOR]

We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices. [ABSTRACT FROM AUTHOR]

Semiconductor nanoparticles (SNPs), such as quantum dots (QDs) and core/shell nanoparticles, have proven to be promising candidates for the development of next-generation technologies, including light-emitting diodes (LEDs), liquid crystal displays (LCDs) and solar concentrators. Typically, these applications use a sub-micrometer-thick film of SNPs to realize photoluminescence. However, our current knowledge on how this thin SNP layer affects the optical efficiency remains incomplete. In this work, we demonstrate how the thickness of the photoluminescent layer governs the direction of the emitted light. Our theoretical and experimental results show that the emission is fully outcoupled for sufficiently thin films (monolayer of SNPs), whereas for larger thicknesses (larger than one tenth of the wavelength) an important contribution propagates along the film that acts as a planar waveguide. These findings serve as a guideline for the smart design of diverse QD-based systems, ranging from LEDs, where thinner layers of SNPs maximize the light outcoupling, to luminescent solar concentrators, where a thicker layer of SNPs will boost the efficiency of light concentration. [ABSTRACT FROM AUTHOR]