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Lanthanide ions (Yb3+ or Er3+) alloying of CsPb(Cl1‐xBrx)3 quantum dots (QDs) to emit approaching 1000 nm show promise in near‐infrared light‐emitting diodes (NIR‐LEDs). High Yb3+ alloying ratio increases the electroluminance efficiency of emission at 990 nm and enables high external quantum efficiency (EQE) of NIR‐LEDs, however, the high alloying ratio also results in inferior material stability and PLQY drop because of Yb3+‐induced nanocrystal precipitation. This study finds that the heavy alloying of Yb3+ ions causes lattice distortion and coherent energy reduction of Yb3+: CsPb(Cl1‐xBrx)3 QDs, induced by two Yb3+ ions replacing three Pb2+, which leads to the collapse of the octahedral structure in ambient conditions. It posits that spontaneous monovalent ion (Na+) alloying can address the trade‐off between material stability and emission intensity. The Na+ occupies the vacancy of Pb2+ ions, relaxing the distortion in the lattice and improving the phase stability of octahedral structure, and this optimized structure in turn allows a higher Yb3+ alloying ratio. Stability measurements show that the Na+/Yb3+ co‐alloyed films show ten‐fold higher material stability and 2.0‐fold emission efficiency related to controls. It reports that as a result Na+/Yb3+ co‐alloyed NIR‐LEDs have an EQE of 6.4% at 990 nm, which is among the highest perovskite NIR‐LEDs beyond 950 nm. [ABSTRACT FROM AUTHOR]

Perovskite nanocrystals (PeNCs) deliver size‐ and composition‐tunable luminescence of high efficiency and color purity in the visible range. However, attaining efficient electroluminescence (EL) in the near‐infrared (NIR) region from PeNCs is challenging, limiting their potential applications. Here we demonstrate a highly efficient NIR light‐emitting diode (LED) by doping ytterbium ions into a PeNCs host (Yb3+ : PeNCs), extending the EL wavelengths toward 1000 nm, which is achieved through a direct sensitization of Yb3+ ions by the PeNC host. Efficient quantum‐cutting processes enable high photoluminescence quantum yields (PLQYs) of up to 126 % from the Yb3+ : PeNCs. Through halide‐composition engineering and surface passivation to improve both PLQY and charge‐transport balance, we demonstrate an efficient NIR LED with a peak external quantum efficiency of 7.7 % at a central wavelength of 990 nm, representing the most efficient perovskite‐based LEDs with emission wavelengths beyond 850 nm. [ABSTRACT FROM AUTHOR]

Quantum dot light-emitting diodes (QLEDs) have been identified as a next-generation display technology owing to their low-cost manufacturing, wide color gamut, and electrically driven self-emission properties. However, the efficiency and stability of blue QLEDs still pose a significant challenge, limiting their production and potential application. This review aims to analyse the factors leading to the failure of blue QLEDs and presents a roadmap to accelerate their development based on the progress made in the synthesis of II-VI (CdSe, ZnSe) quantum dots (QDs), III-V (InP) QDs, carbon dots, and perovskite QDs. The proposed analysis will include discussions on material synthesis, core-shell structures, ligand interactions, and device fabrication, providing a comprehensive overview of these materials and their development. [ABSTRACT FROM AUTHOR]

[Display omitted] In terms of tunable luminescence and high quantum efficiency, colloidal quantum dots (CQDs) are promising semiconductors for constructing near-infrared light-emitting diodes (NIR-LEDs). However, currently available NIR-LEDs are susceptible to variations in the emission layer thickness (EMLT), the highest external quantum efficiency (EQE) decreases to below 50% (relative to peak EQE) when the EMLT varies out of a narrow range of (±30 nm). This is due to the thickness-dependent carrier recombination rate and current density variation, resulting in batch-to-batch EQE fluctuations that limit LED reproducibility. Here we report efficient NIR-LEDs that exhibit EQE variations of less than 15% (relative to the champion EQE) over an EMLT range of 40–220 nm; the highest achievable EQE of ∼11.5% was obtained by encapsulating a 212 nm-thick CQD within a type-I inorganic shell to enhance the radiative recombination in the dots, resulting in a high photoluminescence quantum yield of 80%, and by post-treating the films with a bifunctional linking agent to improve and balance the hole and electron mobilities in the entire film (electron mobility: 8.23 × 10−3 cm2 V−1 s−1; hole mobility: 7.0 × 10−3 cm2 V−1 s−1). This work presents the first NIR-LEDs that exhibit EMLT-invariant EQE over an EMLT range of 40–220 nm, which represents the highest EQE among reported CQD NIR-LEDs with a QD thickness exceeding 100 nm. [ABSTRACT FROM AUTHOR]

Large-area organic light-emitting diodes (OLEDs) fabricated by solution process with low-cost are essential for practical applications. However, maintaining desirable uniformity and smoothness of prepared films are challenging with the enhancement of film size and layers. Reported herein is a systematic strategy of solvent and device structure engineering for designing small molecular hybrid white OLED (WOLED) via blade-coating. Benefiting from the uniform blade-coated films with low roughness about 1 nm as well as the balanced charge carrier transport, the blade-coated WOLED with hybrid fluorescence and phosphorescence (small area 0.1 cm2) shows the maximum current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE) of 29.0 cd A−1, 30.4 lm W−1, and 11.6%, respectively. And the WOLEDs achieve low turn-on voltage (V on) of about 2.8 V. Meanwhile, the all-vacuum-based WOLED reaches maximum CE, PE, and EQE of 40 cd A−1, 44.3 lm W−1, and 15.9%, respectively. Remarkably, a larger area of the device (2 cm × 2 cm) with uniform emitting reaches peak EQE of 6.8% by blade-coating, notably, only a small amount of solution about 0.9 μL/cm2 was consumed for blade-coated films. The high-performance and low-cost WOLED via blade-coating is ascribed to the facile strategy to improve the film morphology and the energy-level matching, which provides huge potential in display and flat panel lighting. Benefiting from the solvent and device structure engineering, the blade-coated hybrid white organic light-emitting diodes (WOLEDs) reach external quantum efficiencies (EQEs) close to 12% (small-area, 0.1 cm2) and 6.8% (2 cm × 2 cm) with a small amount of solution about 0.9 μL/cm2. [Display omitted] • Fabricating a hybrid white organic light-emitting diodes (WOLEDs) by blade-coating at ambient conditions. • Selecting the ideal solvents (solvent engineering) and electron-transporting layer for the highly efficient blade-coating WOLED which reaches the maximum EQE, power efficiency (PE), and current efficiency (CE) of 11.6%, 30.4 lm W−1, and 29.0 cd A−1, respectively. • Fabricating a blade-coated WOLED (2 cm × 2 cm) owning peak EQE of 6.8% with a small amount of solution of 0.9 μL/cm2. [ABSTRACT FROM AUTHOR]