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Metal halide perovskite light‐emitting diodes (PeLEDs) are expected to be the next‐generation display technology due to their unique optoelectronic properties. Currently, the external quantum efficiencies of PeLEDs based on solution‐processed fabrication methods already exceed 20%. However, there are still many challenges existing in solution‐based PeLEDs that inhibit their commercialization. Recently, vacuum deposition techniques of perovskites have drawn much attention because of the ability to grow dense and uniform large‐area perovskite films with precisely controlled thickness, which is compatible with state‐of‐the‐art organic LED manufacturing processes. Despite the promising prospects of vacuum‐based PeLEDs, some challenges remain to be addressed to achieve PeLEDs with both high efficiency and high stability that are required for practical applications such as active‐matrix displays. This requires precise control of the film morphology, composition, and interface during the deposition process through fine‐tuning of the substrate temperature, deposition rate, vacuum level, precursor formulation, and post‐treatment conditions. In this review, it focuses on the key requirements for vacuum‐processed PeLEDs, highlights the recent advances in materials and devices of PeLEDs, and emphasize vacuum evaporation methods as well as the corresponding device performance. Possible approaches to improve the efficiency and the long‐term operational stability of vacuum‐processed PeLEDs are discussed. [ABSTRACT FROM AUTHOR]

Performance of blue solution‐processed perovskite light‐emitting diodes (LEDs) is limited by availability of blue perovskite materials. Herein, 4‐(trifluoromethyl)benzoyl ammonium bromide (4‐TMBABr) is used with abundant NH and CO groups to passivate the defects and produce highly stable PEAxPA2‐x(CsPbBr3)n‐1PbBr4 perovskites for blue LED applications. The NH group in the 4‐TMBABr suppresses the Br‐ion mismatch through hydrogen bonds (N‐H···Br) and CO group coordinates the unsaturated lead dangling bonds (CO:Pb). The effective defect passivation by 4‐TMBABr reduces the nonradiative recombination in the perovskite films, hence enhancing its optical performance. In the LED structure, the sodium bis(trifluoromethanesulfonyl)imide (SBTI) modified NiOx films are used to improve the hole transport and to inhibit the fluorescence quenching of the perovskite layer. The dual‐defect manipulation strategy is advantageous for producing efficient and spectrally stable blue perovskite LEDs, and the authors demonstrate an LED with maximum luminance of 1094 cd m−2 and external quantum efficiency of 10.3%. This work can inform and underpin future development of blue perovskite LEDs with highly efficient and stabile performance. [ABSTRACT FROM AUTHOR]

Metal halide perovskite quantum dots (QDs) have emerged as potential materials for high brightness, wide color gamut, and cost‐effective backlight emission due to their high photoluminescence quantum yields, narrow emission linewidths, and tunable bandgaps. Herein, CsPbX3/SBA‐15 nanocomposites are prepared with outstanding optical properties and high stability through an in situ growth strategy using mesoporous silica particles. According to finite‐difference time‐domain simulations, the mesoporous structure provides a strong waveguide effect on perovskite QDs and the uniform dispersion suppresses reabsorption losses, improving the overall photoconversion efficiency of perovskite QDs. The as‐fabricated perovskite monochromatic light‐emitting diode (LED) has a maximum luminous efficiency of 183 lm W−1, which is the highest for monochromatic perovskite LEDs reported to date. A further benefit of this work is that the white devices, which combine the green and red perovskite nanocomposites with commercial blue LED, exhibit a high luminous efficiency of 116 lm W−1 and a wide color gamut (125% for NTSC and 94% for Rec. 2020) with coordinates of (0.33,0.31). [ABSTRACT FROM AUTHOR]

Quasi‐2D Ruddlesden‐Popper perovskites receive tremendous attention for application in light‐emitting diodes (LEDs). However, the role of organic ammonium spacers on perovskite film has not been fully‐understood. Herein, a spacer cation assisted perovskite nucleation and growth strategy, where guanidinium (GA+) spacer is introduced into the perovskite precursor and at the interface between the hole transport layer (HTL) and the perovskite, to achieve dense and uniform perovskite films with enhanced optical and electrical performance is developed. A thin GABr interface pre‐formed on HTL provides more nucleation sites for perovskite crystal; while the added GA+ in perovskite reduces the crystallization rate due to strong hydrogen bonding interacts with intermediates, which promotes the growth of enhanced‐quality quasi‐2D perovskite films. The ionized ammonium group (NH3+) of GA+ also favors formation of polydisperse domain distribution, and amine or imine (NH2 or NH) group interact with perovskite defects through coordination bonding. The spacer cation assisted nucleation and growth strategy is advantageous for producing efficient and high‐luminance perovskite LEDs, with a peak external quantum efficiency of over 20% and a luminance up to 100 000 cd m−2. This work can inform and underpin future development of high‐performance perovskite LEDs with concurrent high efficiency and brightness. [ABSTRACT FROM AUTHOR]

The last decade has witnessed extensive breakthroughs and significant progress in atomically flat two-dimensional (2D) semiconductor nanoplatelets (NPLs) in terms of synthesis, growth mechanisms, optical and electronic properties and practical applications. Such NPLs have electronic structures similar to those of quantum wells in which excitons are predominantly confined along the vertical direction, while electrons are free to move in the lateral directions, resulting in unique optical properties, such as extremely narrow emission line width, short photoluminescence (PL) lifetime, high gain coefficient, and giant oscillator strength transition (GOST). These unique optical properties make NPLs favorable for high color purity light-emitting applications, in particular in light-emitting diodes (LEDs), backlights for liquid crystal displays (LCDs) and lasers. This review article first introduces the intrinsic characteristics of 2D semiconductor NPLs with atomic flatness. Subsequently, the approaches and mechanisms for the controlled synthesis of atomically flat NPLs are summarized followed by an insight on recent progress in the mediation of core/shell, core/crown and core/crown@shell structures by selective epitaxial growth of passivation layers on different planes of NPLs. Moreover, an overview of the unique optical properties and the associated light-emitting applications is elaborated. Despite great progress in this research field, there are some issues relating to heavy metal elements such as Cd2+ in NPLs, and the ambiguous gain mechanisms of NPLs and others are the main obstacles that prevent NPLs from widespread applications. Therefore, a perspective is included at the end of this review article, in which the current challenges in this stimulating research field are discussed and possible solutions to tackle these challenges are proposed. [ABSTRACT FROM AUTHOR]

Quasi-two-dimensional (quasi-2D) perov- skites possess the preponderances of large exciton binding energy and quantum confinement effects compared with three-dimensional (3D) perovskites. The unique properties of quasi-2D perovskite have attracted extensive attention in the field of optoelectronic devices, especially in the light emitting diode (LED) direction. However, the adverse effects between the perovskite emission layer and the popularly used hole transport layer (HTL) Poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) have degrade the device performance, such as large energy level barrier and exciton quenching. Here we demonstrated high performance of LED with enhanced brightness and efficiency by modifying the PEDOT:PSS with NdBr3, which not only decreases exciton quenching, but also decreases HOMO level of the PEDOT:PSS, thereby improving the charge balance. The final performance of the perovskite light-emitting diode (PeLED) device was obtained with a maximum luminance of 18684 cd m−2, a maximum current efficiency (CE) of 48.4 cd A−1 and an external quantum efficiency (EQE) of up to 15.5% when using NdBr3 modified PEDOT:PSS. [ABSTRACT FROM AUTHOR]

InP quantum dots (QDs)-based light-emitting diodes (QLEDs) are considered as one of the most promising candidates for environmentally cadmium (Cd)-free electroluminescence devices. However, the performance of InP QLEDs still lags far behind that of Cd-containing QLEDs, which limits their practical applications in next-generation displays and lighting. Here, we report an all-solution processed green InP QLED, which is enabled by an electron transport layer (ETL) of In-doped ZnO (IZO) nanoparticles (NPs). The ETL of IZO NPs can not only suppress the exciton quenching of InP QDs emitting layer due to the reduced defect states, but also improve the charge balance by partially blocking the injection of electrons, and thus the device performance. The optimized InP QLED exhibits a maximum external quantum efficiency (EQE) of 5.42% corresponding to a current efficiency (CE) of 21.22 cd A−1, which is three times higher than that of the control device based on ZnO ETL, respectively. Our work suggests that IZO NPs can function as a good ETL material in QLEDs and other optoelectronic devices. [ABSTRACT FROM AUTHOR]

Lead halide perovskite nanocrystals (PeNCs) are promising materials for applications in optoelectronics. However, their environmental instability remains to be addressed to enable their advancement into industry. Here the development of a novel synthesis method is reported for monodispersed PeNCs coated with all inorganic shell of cesium lead bromide (CsPbBr3) grown epitaxially on the surface of formamidinium lead bromide (FAPbBr3) NCs. The formed FAPbBr3/CsPbBr3 NCs have photoluminescence in the visible range 460–560 nm with narrow emission linewidth (20 nm) and high optical quantum yield, photoluminescence quantum yield (PLQY) up to 93%. The core/shell perovskites have enhanced optical stability under ambient conditions (70 d) and under ultraviolet radiation (50 h). The enhanced properties are attributed to overgrowth of FAPbBr3 with all‐inorganic CsPbBr3 shell, which acts as a protective layer and enables effective passivation of the surface defects. The use of these green‐emitting core/shell FAPbBr3/CsPbBr3 NCs is demonstrated in light‐emitting diodes (LEDs) and significant enhancement of their performance is achieved compared to core only FAPbBr3‐LEDs. The maximum current efficiency observed in core/shell NC LED is 19.75 cd A‐1 and the external quantum efficiency of 8.1%, which are approximately four times and approximately eight times higher, respectively, compared to core‐only devices. [ABSTRACT FROM AUTHOR]