1. Numerical Investigation of InGaN Light-Emitting Diode with Al/In-Graded p-AlGaN/InGaN Superlattice Electron-Blocking Layer.
- Author
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Zeng, Si-Ming, Zheng, Shu-Wen, and Fan, Guang-Han
- Subjects
LIGHT emitting diodes ,QUANTUM well lasers ,SUPERLATTICES ,COMPUTER simulation ,ELECTROSTATIC fields ,ENERGY bands ,ELECTRIC currents - Abstract
Three kinds of InGaN/GaN multiple-quantum-well light-emitting diode with different electron-blocking layers (EBLs) have been investigated numerically. The energy band diagrams, light-current curves, voltage-current curves, electrostatic fields, carrier concentrations in the quantum wells, electron current densities, radiative recombination rates in active region, and internal quantum efficiency (IQE) are reported. The results show that, when the conventional AlGaN EBL is replaced by a p-AlGaN/InGaN superlattice EBL or graded p-AlGaN/InGaN superlattice EBL, respectively, the light output power at 200 mA can be increased by 46.0% and 52.8%, the turn-on voltage can be decreased from 3.2 V to 3.0 V, the IQE can be increased by 45.6% and 53.8% at 200 mA, and the efficiency droop can be reduced from 31.2% to 21.6%. These improvements are mainly attributed to the properly modified energy band structures which favor carrier injection. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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