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Perovskite nanocrystals (PeNCs) deliver size‐ and composition‐tunable luminescence of high efficiency and color purity in the visible range. However, attaining efficient electroluminescence (EL) in the near‐infrared (NIR) region from PeNCs is challenging, limiting their potential applications. Here we demonstrate a highly efficient NIR light‐emitting diode (LED) by doping ytterbium ions into a PeNCs host (Yb3+ : PeNCs), extending the EL wavelengths toward 1000 nm, which is achieved through a direct sensitization of Yb3+ ions by the PeNC host. Efficient quantum‐cutting processes enable high photoluminescence quantum yields (PLQYs) of up to 126 % from the Yb3+ : PeNCs. Through halide‐composition engineering and surface passivation to improve both PLQY and charge‐transport balance, we demonstrate an efficient NIR LED with a peak external quantum efficiency of 7.7 % at a central wavelength of 990 nm, representing the most efficient perovskite‐based LEDs with emission wavelengths beyond 850 nm. [ABSTRACT FROM AUTHOR]

[Display omitted] In terms of tunable luminescence and high quantum efficiency, colloidal quantum dots (CQDs) are promising semiconductors for constructing near-infrared light-emitting diodes (NIR-LEDs). However, currently available NIR-LEDs are susceptible to variations in the emission layer thickness (EMLT), the highest external quantum efficiency (EQE) decreases to below 50% (relative to peak EQE) when the EMLT varies out of a narrow range of (±30 nm). This is due to the thickness-dependent carrier recombination rate and current density variation, resulting in batch-to-batch EQE fluctuations that limit LED reproducibility. Here we report efficient NIR-LEDs that exhibit EQE variations of less than 15% (relative to the champion EQE) over an EMLT range of 40–220 nm; the highest achievable EQE of ∼11.5% was obtained by encapsulating a 212 nm-thick CQD within a type-I inorganic shell to enhance the radiative recombination in the dots, resulting in a high photoluminescence quantum yield of 80%, and by post-treating the films with a bifunctional linking agent to improve and balance the hole and electron mobilities in the entire film (electron mobility: 8.23 × 10−3 cm2 V−1 s−1; hole mobility: 7.0 × 10−3 cm2 V−1 s−1). This work presents the first NIR-LEDs that exhibit EMLT-invariant EQE over an EMLT range of 40–220 nm, which represents the highest EQE among reported CQD NIR-LEDs with a QD thickness exceeding 100 nm. [ABSTRACT FROM AUTHOR]