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Abstract: In this paper we analyze the dissolution behavior of two common i-line resists (MEGAPOSIT SPR 955-CM and AZ MiR 701) and validate the experimental findings by generating simulation models and implementing them in simulation software. It is demonstrated that with the data provided by a Dissolution Rate Monitor (DRM) the quality of lithography simulation results can improve and can speed up process development and optimization. Different process conditions were investigated to evaluate the area of validity of the simulation model. Lithography simulation software packages LayoutLAB and Dr. LiTHO were used to verify the resist models. [Copyright &y& Elsevier]

Abstract: In this paper we describe the use of an Excimer laser for full-field lithography in a Mask Aligner. The DUV light from the Excimer laser is homogenized by using micro lens based optical integrators instead of a macro lens array. A simulation of the intensity distribution for 5μm squares was performed to visualize the diffraction effects and to show the potential of 193nm illumination. It is demonstrated that compared to the conventional homogenization optics the MO Exposure Optics further improves the illumination uniformity, calculated as 1.8% for MO Exposure Optics and 2.9% for the A-Optics. Moreover the improved optical setup allows a modification of the angular spectrum by using exchangeable illumination filter plates (IFP). Compared to the A-Optics the main improvement effect of MO Exposure Optics is detectable in the patterning of layouts containing critical dimension from 8μm down to 2μm. [Copyright &y& Elsevier]

Abstract: This paper presents experimental results and simulation studies of resist processes for contact printing. A resolution of 200nm can be achieved using simple binary masks, conventional photoresist, and standard mercury arc lamp illumination. Simulation helps to understand typical resist artifacts in dense structures, and allows the design of optimal masks and process conditions. [Copyright &y& Elsevier]

Abstract: Based on numerical simulations, we show the influence of the illumination on process windows in mask aligner lithography. The precise shaping of the illuminating light can lead to greatly increased process windows. We show that the best results are obtained when combining an optimized illumination with optimized mask structures and Optical Proximity Correction (OPC). We model the illumination according to the novel illumination system for SUSS MicroTec mask aligners, referred to as MO Exposure Optics, which allows a precise shaping of the angular spectrum and the partial coherence of the mask illuminating light by using Illumination Filter Plates (IFPs). [Copyright &y& Elsevier]