1. Impact of dynamic variability on the operation of CMOS inverter.
- Author
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Ioannidis, E. G., Haendler, S., J.-P. Manceau, Dimitriadis, C. A., and Ghibaudo, G.
- Subjects
- *
COMPLEMENTARY metal oxide semiconductors , *ELECTRIC inverters , *DIGITAL electronics , *LOGIC circuits , *CMOS integrated circuits - Abstract
The impact of dynamic variability due to low-frequency fluctuations on the operation of CMOS inverters, which constitute the basic component of SRAM cell, is investigated. The experimental methodology to characterise the effect of dynamic variability in a CMOS inverter is first established based on fast I-V measurements of the load current following the application of a ramp input voltage Vin(t). It is shown that, for small ramp rise times, the load current characteristics IDD(Vin) exhibit a huge sweep-to-sweep dispersion due to low-frequency noise. The impact of such dynamic variability sources on the inverter's output characteristics Vout(Vin) is finally demonstrated, revealing a 20% noise margin reduction for the smallest inverter cell. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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