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Your search keyword '"Britton, Charles L."' showing total 2 results
Start Over Author "Britton, Charles L." Topic logic gates
2 results on '"Britton, Charles L."'

1. An ultra-low voltage self-startup charge pump for energy harvesting applications.

Author

Ulaganathan, Chandradevi, Blalock, Benjamin J., Holleman, Jeremy, and Britton, Charles L.

Abstract

An ultra-low voltage, self-starting, switched-capacitor based charge pump is proposed for energy harvesting applications. The integrated linear charge pump topology presented in this work has been optimized for low-voltage start-up. The control signals for the charge-transfer switches (CTS), generated using two clock phases, reduce reverse currents and thus improve the efficiency of the converter. Adiabatic switching techniques have been employed to reduce the switching losses associated with the CTS gate control. This design has been implemented in a 130-nm CMOS process. Simulation results demonstrate a low startup voltage of 125 mV with efficiency of 62 % for a static current load of 0.1 µA. [ABSTRACT FROM PUBLISHER]

Published
2012
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2. Datasheet Driven Silicon Carbide Power MOSFET Model.

Author

Mudholkar, Mihir, Ahmed, Shamim, Ericson, M. Nance, Frank, S. Shane, Britton, Charles L., and Mantooth, H. Alan

Subjects
METAL oxide semiconductor field-effect transistors, SILICON carbide, SWITCHING circuits, COMPUTER simulation, TEMPERATURE effect, WIDE gap semiconductors, PREDICTION models
Abstract

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25°C to 225°C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range. [ABSTRACT FROM AUTHOR]

Published
2014
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