Search

During heavy-ion experiments, the single-event gate rupture (SEGR) effects can still be observed in the vertical double-diffused power MOSFET (VDMOS) with radiation-hardened cells. Fault analysis demonstrates that the hot spots locate at the termination of the VDMOS. Then, several mitigation solutions for termination structure are discussed comprehensively by means of TCAD simulations. Finally, a combined hardness method with horizontally extending P+ region and adding floating N+ region is proposed. It is effective to reduce the electric field of gate oxide to below the calculated critical field, without additional masks and process steps. [ABSTRACT FROM AUTHOR]

In the harsh space environment, the phase-locked loop (PLL) circuit is vulnerable to radiation effects, which will lead to performance degradation or even function interrupts. In this article, a rad-hard low-noise PLL is designed with low power and area overhead and verified in a 130-nm silicon-on-insulator process. Heavy ion test demonstrates that the proposed PLL is immune to the single-event effect up to 83.7 MeV·cm2/mg. Furthermore, its single-event sensitivity is characterized and compared with an unhardened PLL by the pulsed laser test. Finally, the gamma-ray radiation experiment confirms that it can provide >300 krad(Si) total ionizing dose assurance. [ABSTRACT FROM AUTHOR]

A surface-potential-based model is developed for the symmetric long-channel junctionless double-gate MOSFET. The relationships between surface potential and gate voltage are derived from some effective approximations to Poisson's equation for deep depletion, partial depletion, and accumulation conditions. Then, the Pao–Sah integral is carried out to obtain the drain current. It is shown that the model is in good agreement with numerical simulations from subthreshold to saturation region. Finally, we discuss the strengths and limitations (i.e., threshold voltage shifts) of the JLFET, which has been recently proposed as a promising candidate for the JFET. [ABSTRACT FROM AUTHOR]